Abstract: Provided is a light-emitting device provided with a light reflection layer which has a high light reflectivity and which is less susceptible to deterioration of the reflectivity due to corrosion, and having an improved light extraction efficiency. A light-emitting device comprising a substrate having a conductor layer formed on its surface and a light-emitting element disposed on the conductor layer, characterized in that an overcoat layer is formed between the conductor layer and the light-emitting element, and the overcoat layer is a borosilicate glass which comprises, as represented by mol % based on oxides, from 62 to 84% of SiO2, from 10 to 25% of B2O3, from 0 to 5% of Al2O3 and from 0 to 5% in total of at least one of Na2O and K2O, provided that the total content of SiO2 and Al2O3 is from 62 to 84%, and may contain from 0 to 10% of MgO and at least one of CaO, SrO and BaO in a total content of at most 5%.

Abstract: The present invention relates to an organic LED element sequentially including: a transparent substrate; a scattering layer; a first electrode; an organic layer; and a second electrode, in which the scattering layer includes a first glass material and a second glass material dispersed in the first glass material and having a different refractive index from the first glass material.

Abstract: To provide a light emitting diode package of which the height of protrusion of a thermal via is decreased without decreasing the flexural strength of an insulating substrate. A light emitting diode package comprising a light emitting diode element mounted on a substrate, wherein the substrate is obtained by firing a glass ceramic composition containing a powder of glass containing, as represented by mole percentage, from 57 to 65% of SiO2, from 13 to 18% of B2O3, from 9 to 23% of CaO, from 3 to 8% of Al2O3 and from 0.5 to 6% of at least one of K2O and Na2O in total, and a ceramic filler.

Abstract: The present invention relates to an organic LED element sequentially including: a transparent substrate; a scattering layer; a first electrode; an organic layer; and a second electrode, in which the scattering layer includes a first glass material and a second glass material dispersed in the first glass material and having a different refractive index from the first glass material.

Abstract: To provide glass with which a sealing treatment can be carried out at a temperature of at most 400° C. and which does not deteriorate or change in quality for a long time. Glass comprising, as represented by mol % based on oxides, from 27 to 33% of P2O5, from 50 to 70% of SnO, from 0 to 10% of ZnO, from 0.5 to 5% of CaO and from 0 to 5% of B2O3.

Abstract: A light-emitting device with excellent heat dissipation properties is provided having a conductor layer for light reflection with high light reflectance, less susceptibility to deterioration of the reflectance due to corrosion, and improved light extraction efficiency. The device contains a ceramic substrate having a lower ceramic layer, a conductor layer for light reflection formed on a desired area of the lower ceramic layer surface, an upper ceramic layer formed so as to cover at least a part of the conductor layer for light reflection, and a light-emitting element disposed on the upper side of the upper ceramic layer of the ceramic substrate, such that the upper ceramic layer has a thickness of from 5 to 100 ?m.

Abstract: A lead-free glass for covering electrodes including, as represented by mass % based on the following oxides, from 30 to 50% of B2O3, from 21 to 25% of SiO2, from 10 to 35% of ZnO, from 7 to 14% in total of K2O and either one or both of Li2O and Na2O, from 0 to 10% of Al2O3, and from 0 to 10% of ZrO2, wherein when it contains at least one component selected from the group consisting of MgO, CaO, SrO and BaO, the total of their contents is at most 5%, and when the molar fractions of Li2O, Na2O and K2O are represented by l, n and k, respectively, l is at most 0.025, and l+n+k is from 0.07 to 0.17.

Abstract: A glass-covered light-emitting element and a glass-covered light-emitting device are provided, which are covered with a glass having a low glass transition point and a thermal expansion coefficient close to that of the light-emitting element. The glass-covered light-emitting element includes a semiconductor light-emitting element having a principal surface, and a P2O5—ZnO—SnO type glass covering the principal surface of the semiconductor light-emitting element, and the glass consists essentially of, as represented by mol % based on the following oxides, from 20 to 45% of P2O5, from 20 to 50% of ZnO and from 20 to 40% of SnO, and the glass has a glass transition point of at least 290° C. and at most 450° C., and a thermal expansion coefficient of at most 105×10?7/° C.

Abstract: To provide non-lead glass for covering electrodes, whereby the strength of front substrates of plasma display devices can be improved, and the dielectric constant can be made small. Non-lead glass for covering electrodes, which comprises, as represented by mol % based on the following oxides, from 42 to 52% of B2O3, from 40 to 48% of SiO2, from 3.5 to less than 7% of K2O and from 0 to 6% of ZrO2, wherein the total content of B2O3 and SiO2 is at least 88%. Further, a plasma display device comprising a front glass substrate to be used as a display surface, a rear glass substrate and barrier ribs to define cells, wherein transparent electrodes formed on the front glass substrate or the rear glass substrate are covered with the above non-lead glass for covering electrodes.

Abstract: Provided is a light-emitting device provided with a light reflection layer which has a high light reflectivity and which is less susceptible to deterioration of the reflectivity due to corrosion, and having an improved light extraction efficiency. A light-emitting device comprising a substrate having a conductor layer formed on its surface and a light-emitting element disposed on the conductor layer, characterized in that an overcoat layer is formed between the conductor layer and the light-emitting element, and the overcoat layer is a borosilicate glass which comprises, as represented by mol % based on oxides, from 62 to 84% of SiO2, from 10 to 25% of B2O3, from 0 to 5% of Al2O3 and from 0 to 5% in total of at least one of Na2O and K2O, provided that the total content of SiO2 and Al2O3 is from 62 to 84%, and may contain from 0 to 10% of MgO and at least one of CaO, SrO and BaO in a total content of at most 5%.

Abstract: To provide a light emitting diode package of which the height of protrusion of a thermal via is decreased without decreasing the flexural strength of an insulating substrate. A light emitting diode package comprising a light emitting diode element mounted on a substrate, wherein the substrate is obtained by firing a glass ceramic composition containing a powder of glass containing, as represented by mole percentage, from 57 to 65% of SiO2, from 13 to 18% of B2O3, from 9 to 23% of CaO, from 3 to 8% of Al2O3 and from 0.5 to 6% of at least one of K2O and Na2O in total, and a ceramic filler.

Abstract: To provide glass with which a sealing treatment can be carried out at a temperature of at most 400° C. and which does not deteriorate or change in quality for a long time. Glass comprising, as represented by mol % based on oxides, from 27 to 33% of P2O5, from 50 to 70% of SnO, from 0 to 10% of ZnO, from 0.5 to 5% of CaO and from 0 to 5% of B2O3.

Abstract: A method for producing a laminated dielectric, which comprises laminating a raw material layer containing a high dielectric constant glass ceramic composition comprising from 30 to 70 mass % of a Ba—Ti compound powder having a Ti/Ba molar ratio of from 3.0 to 5.7 and from 30 to 70 mass % of an alkali free glass powder containing, by mol %, from 15 to 40% of SiO2, from 5 to 37% of B2O3, from 2 to 15% of Al2O3, from 1 to 25% of CaO+SrO, from 5 to 25% of BaO and from 25 to 50% of SiO2+Al2O3, and a raw material layer containing a low dielectric constant glass ceramic composition comprising from 10 to 70 mass % of a ceramic powder and from 30 to 90 mass % of an alkali free glass powder wherein SiO2+Al2O3 is at least 34 mol % and larger by at least 9 mol % than that in the above alkali free glass powder, followed by firing.

Abstract: A glass-covered light-emitting element and a glass-covered light-emitting device are provided, which are covered with a glass having a low glass transition point and a thermal expansion coefficient close to that of the light-emitting element. The glass-covered light-emitting element includes a semiconductor light-emitting element having a principal surface, and a P2O5—ZnO—SnO type glass covering the principal surface of the semiconductor light-emitting element, and the glass consists essentially of, as represented by mol % based on the following oxides, from 20 to 45% of P2O5, from 20 to 50% of ZnO and from 20 to 40% of SnO, and the glass has a glass transition point of at least 290° C. and at most 450° C., and a thermal expansion coefficient of at most 105×10?7/° C.

Abstract: To provide a method for producing a laminated dielectric material using a stabilized glass. A method for producing a laminated dielectric material wherein the absolute value of the difference in the average linear expansion coefficient at from 50 to 350° C. between any adjacent dielectric layers is at most 15×10?7/° C.; at least one raw material layer before firing, comprises, as represented by mass %, from 50 to 80% of glass powder and from 20 to 50% of alumina powder; said glass powder comprises, as represented by mol %, from 45 to 60% of SiO2, from 2 to 10% of Al2O3, from 10 to 30% of BaO, from 10 to 20% of ZnO, etc.; and each of glass powders contained in two raw material layers adjacent to said raw material layer, comprises, as represented by mol %, from 45 to 55% of SiO2, from 2 to 20% of Al2O3, from 20 to 45% of MgO, etc.; and the glass transition temperature of the latter glass powder is higher by at least 50° C. than that of the former.

Abstract: A non-lead glass for forming a dielectric, which consists essentially of, as represented by mol %, from 20 to 39% of SiO2, from 5 to 35% of B2O3, from 2 to 15% of Al2O3, from 1 to 25% of CaO+SrO, from 5 to 25% of BaO, from 0 to 35% of ZnO, and from 0 to 10% of TiO2+ZrO2+SnO2, provided that B2O3+ZnO is from 15 to 45%, and which does not contain alkali metal oxides, or contains such oxides in a total amount within a range of less than 1%. Further, a glass ceramic composition for forming a dielectric, which consists essentially of a Ba-containing compound powder and a powder of the above mentioned non-lead glass for forming a dielectric. Further, a dielectric obtained by firing the above glass ceramic composition for forming a dielectric.

Abstract: To provide a process for producing an electrode-formed glass substrate, which increases the strength of a front substrate of a plasma display device. Electrodes formed on a glass substrate are covered with a lead-free glass comprising, as represented by mass %, from 30 to 50% of B2O3, from 21 to 25% of SiO2, from 10 to 35% of ZnO, from 7 to 14% in total of K2O and either one or both of Li2O and Na2O, from 0 to 10% of Al2O3, from 0 to 10% of ZrO2, and from 0 to 5% of MgO+CaO+SrO+BaO, and when the molar fractions of Li2O, Na2O and K2O are represented by l, n and k, respectively, l is at most 0.025, and l+n+k is from 0.07 to 0.13.

Abstract: To provide a process for producing an electrode-formed glass substrate, which is capable of suppressing warpage without lowering the strength of a front substrate of a plasma display device. Electrodes formed on a glass substrate are covered with a lead-free glass comprising, as represented by mass %, from 30 to 50% of B2O3, more than 25% and at most 35% of SiO2, from 10 to 25% of ZnO, from 7 to 19% in total of K2O and either one or both of Li2O and Na2O, from 0 to 5% of Al2O3, from 0 to 5% of MgO+CaO+SrO+BaO, and when the molar fractions of Li2O, Na2O and K2O are represented by l, n and k, respectively, l is at most 0.025, and l+n+k is from 0.07 to 0.17.

Abstract: A method for producing a laminated dielectric, which comprises laminating a raw material layer containing a high dielectric constant glass ceramic composition comprising from 30 to 70 mass % of a Ba—Ti compound powder having a Ti/Ba molar ratio of from 3.0 to 5.7 and from 30 to 70 mass % of an alkali free glass powder containing, by mol %, from 15 to 40% of SiO2, from 5 to 37% of B2O3, from 2 to 15% of Al2O3, from 1 to 25% of CaO+SrO, from 5 to 25% of BaO and from 25 to 50% of SiO2+Al2O3, and a raw material layer containing a low dielectric constant glass ceramic composition comprising from 10 to 70 mass % of a ceramic powder and from 30 to 90 mass % of an alkali free glass powder wherein SiO2+Al2O3 is at least 34 mol % and larger by at least 9 mol % than that in the above alkali free glass powder, followed by firing.

Abstract: A non-lead glass for forming a dielectric, which consists essentially of, as represented by mol %, from 20 to 39% of SiO2, from 5 to 35% of B2O3, from 2 to 15% of Al2O3, from 1 to 25% of CaO+SrO, from 5 to 25% of BaO, from 0 to 35% of ZnO, and from 0 to 10% of TiO2+ZrO2+SnO2, provided that B2O3+ZnO is from 15 to 45%, and which does not contain alkali metal oxides, or contains such oxides in a total amount within a range of less than 1%. Further, a glass ceramic composition for forming a dielectric, which consists essentially of a Ba-containing compound powder and a powder of the above mentioned non-lead glass for forming a dielectric. Further, a dielectric obtained by firing the above glass ceramic composition for forming a dielectric.