Abstract: After a wet blasting treatment for jetting a slurry, which contains spherical alumina as abrasive grains in a liquid, to the surface of a ceramic substrate 10 of aluminum nitride sintered body so that the ceramic substrate 10 has a residual stress of not higher than ?50 MPa and so that the surface of the ceramic substrate 10 to be bonded to the metal plate 14 has an arithmetic average roughness Ra of 0.15 to 0.30 ?m, a ten-point average roughness Rz of 0.7 to 1.1 ?m and a maximum height Ry of 0.9 to 1.

Abstract: After a wet blasting treatment for jetting a slurry, which contains spherical alumina as abrasive grains in a liquid, to the surface of a ceramic substrate 10 of aluminum nitride sintered body so that the ceramic substrate 10 has a residual stress of not higher than ?50 MPa and so that the surface of the ceramic substrate 10 to be bonded to the metal plate 14 has an arithmetic average roughness Ra of 0.15 to 0.30 ?m, a ten-point average roughness Rz of 0.7 to 1.1 ?m and a maximum height Ry of 0.9 to 1.

Abstract: A substrate for device bonding includes a substrate having an electrode layer and a solder layer formed on the electrode layer, wherein the solder layer is a Pb-free solder layer which comprises (1) a base metal composed of (i) Sn, (ii) Sn and Au, or (iii) In, (2) at least one metal selected from the group consisting of Bi, In (only in the case where the base metal is Sn, or Sn and Au), Zn, Au (only in the case where the base metal is In) and Sb, and (3) at least one metal selected from the group consisting of Ag, Ni, Fe, Al, Cu and Pt, and the solder layer has a thickness of 1 to 15 ?m and a surface roughness (Ra) of not more than 0.11 ?m.

Abstract: A substrate for device bonding includes a substrate having an electrode layer and a solder layer formed on the electrode layer, wherein the solder layer is a Pb-free solder layer which comprises (1) a base metal composed of (i) Sn, (ii) Sn and Au, or (iii) In, (2) at least one metal selected from the group consisting of Bi, In (only in the case where the base metal is Sn, or Sn and Au), Zn, Au (only in the case where the base metal is In) and Sb, and (3) at least one metal selected from the group consisting of Ag, Ni, Fe, Al, Cu and Pt, and the solder layer has a thickness of 1 to 15 ?m and a surface roughness (Ra) of not more than 0.11 ?m.

Abstract: Novel chromene compounds having various substituents to exhibit a high color-developing sensitivity and a high density even when dispersed in a high-molecular matrix, and exhibiting a large fading rate, less color when deteriorated, and excellent light resistance in the photochromic properties; photochromic materials containing the chromene compounds; and use thereof.

Abstract: Novel chromene compounds having various substituents to exhibit a high color-developing sensitivity and a high density even when dispersed in a high-molecular matrix, and exhibiting a large fading rate, less color when deteriorated, and excellent light resistance in the photochromic properties; photochromic materials containing the chromene compounds; and use thereof.

Abstract: Novel chromene compounds having various substituents to exhibit a high color-developing sensitivity and a high density even when dispersed in a high-molecular matrix, and exhibiting a large fading rate, less color when deteriorated, and excellent light resistance in the photochromic properties; photochromic materials containing the chromene compounds; and use thereof.