Patents by Inventor Yasumasa Aimoto

Yasumasa Aimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polycrystalline silicon rod manufacturing method, and reactor
    Patent number: 11293094
    Abstract: A method of manufacturing polycrystalline silicon rod, wherein a reactor for manufacturing a polycrystalline silicon rod includes gas supply nozzles, and at least one nozzle is a flow rate amplification nozzle having a function that the amount of a silicon deposition raw material gas supplied to the nozzle can be increased.
    Type: Grant
    Filed: March 27, 2019
    Date of Patent: April 5, 2022
    Assignee: Tokuyama Corporation
    Inventors: Takafumi Tatsukawa, Yasumasa Aimoto
  • CORE WIRE HOLDER, APPARATUS FOR PREPARING SILICON, AND METHOD FOR PREPARING SILICON
    Publication number: 20210269316
    Abstract: An object is to improve deposition of silicon on a base portion of a silicon filament. A filament holder (10A) includes a filament holding portion (12A) which has a substantially truncated cone shape. The filament holding portion (12A) has, in a top surface (12a) thereof, a filament insert hole (13A) configured to hold a silicon filament (4A). The angle (0) between the axis and the generatrix of the substantially truncated cone shape is not less than 10 degrees and not more than 30 degrees. The margin width (L) of the filament holding portion (12A) between the outer periphery of the top surface (12a) of the filament holding portion (12A) and an inner wall surface (13a), which is contacted by the silicon filament (4A) of the filament insert hole (13A) is not more than 3 mm at at least one location.
    Type: Application
    Filed: July 16, 2019
    Publication date: September 2, 2021
    Inventors: Kohichi ISHIKAWA, Tetsuya IMURA, Yasumasa AIMOTO
  • Polycrystalline Silicon Rod Manufacturing Method, and Reactor
    Publication number: 20210054499
    Abstract: A method of manufacturing polycrystalline silicon rod, wherein a reactor for manufacturing a polycrystalline silicon rod includes gas supply nozzles, and at least one nozzle is a flow rate amplification nozzle having a function that the amount of a silicon deposition raw material gas supplied to the nozzle can be increased.
    Type: Application
    Filed: March 27, 2019
    Publication date: February 25, 2021
    Applicant: Tokuyama Corporation
    Inventors: Takafumi Tatsukawa, Yasumasa Aimoto
  • Polycrystalline silicon rod
    Patent number: 10900143
    Abstract: A polycrystalline silicon rod is formed of polycrystalline silicon deposited radially around a silicon core line and is characterized by, in a cross-section that is a perpendicular cut in respect to the axial direction of a cylindrical rod, a ratio of surface area covered by coarse crystal particles having a diameter of 50 ?m or greater is 20% or more of the crystal observed at the face, excluding the core line portion.
    Type: Grant
    Filed: February 27, 2013
    Date of Patent: January 26, 2021
    Assignee: Tokuyama Corporation
    Inventors: Haruyuki Ishida, Tetsuya Imura, Yasumasa Aimoto
  • Polycrystalline Silicon Rod
    Publication number: 20150107508
    Abstract: A polycrystalline silicon rod is formed of polycrystalline silicon deposited radially around a silicon core line and is characterized by, in a cross-section that is a perpendicular cut in respect to the axial direction of a cylindrical rod, a ratio of surface area covered by coarse crystal particles having a diameter of 50 ?m or greater is 20% or more of the crystal observed at the face, excluding the core line portion.
    Type: Application
    Filed: February 27, 2013
    Publication date: April 23, 2015
    Inventors: Haruyuki Ishida, Tetsuya Imura, Yasumasa Aimoto