Abstract: A terminal module includes a ring-shaped rail having a groove extending in a circumferential direction, a bus bar fitted into the groove, and a connector portion having a connector terminal connecting the bus bar with an external wire. The rail has a phase determining hole for determining a phase of rotation of the rail about an axial direction.

Abstract: A terminal module includes a ring-shaped rail having a groove extending in a circumferential direction, a bus bar fitted into the groove, and a connector portion having a connector terminal connecting the bus bar with an external wire. The rail has a phase determining hole for determining a phase of rotation of the rail about an axial direction.

Abstract: A terminal module includes a ring-shaped rail having a groove extending in a circumferential direction, a bus bar fitted into the groove, and a connector portion having a connector terminal connecting the bus bar with an external wire. The rail has a phase determining hole for determining a phase of rotation of the rail about an axial direction.

Abstract: This invention provides a water-soluble sealing packaging material having excellent halogen resistance which can seal a medicament to be dispersed or dissolved in water which does not contain a substance potentially harmful to human health, can be used safely, does not deteriorate and maintains solubility in water even if a medicament, especially a medicament comprising chlorine-containing compound or bromine-containing compound, is sealed by the packaging material and stored for a long period of time. The water-soluble sealing packaging material comprises a packaging raw material that comprises 100 parts by weight of a polyvinyl alcohol resin and 0.1 to 100 parts by weight of at least one of inorganic compound selected from the group consisting of a carbonate, an oxide and a hydroxide which have a metal selected from IIa group metals and IIb metals, and a hydrotalcite compound.

Abstract: A terminal module includes a ring-shaped rail having a groove extending in a circumferential direction, a bus bar fitted into the groove, and a connector portion having a connector terminal connecting the bus bar with an external wire. The rail has a phase determining hole for determining a phase of rotation of the rail about an axial direction.

Abstract: There is provided an active matrix display including pixels arrayed in a matrix form and each including a display element and a thin film transistor. In each of columns which the pixels form, the pixels are divided into a first pixel group in which the thin film transistors are arranged along a first straight line parallel with the column, and a second pixel group in which the thin film transistors are arranged along a second straight line parallel with the column and spaced apart from the first straight line.

Abstract: A display device includes a display area composed of pixels in a matrix. Each pixel has a light-emitting element and a driving element to supply a driving current to the light-emitting element. The driving element includes a thin film transistor with a semiconductor layer of a poly-crystalline film. The semiconductor layer is provided with channel region, and a source and drain region disposed on both sides of the channel region. The channel region connects the source region to the drain region and has at least two conductive regions with different average grain sizes. The characteristics of the driving elements are made substantially uniform so that the display quality of the display device can be improved remarkably.

Abstract: A display device includes a display area composed of pixels in a matrix. Each pixel has a light-emitting element and a driving element to supply a driving current to the light-emitting element. The driving element includes a thin film transistor with semiconductor layer 21 of a poly-crystalline film. Semiconductor layer 21 is provided with channel region 21C, and source and drain region 21S and 21D disposed on both sides of channel region 21C. Channel region 21C connects source region 21S to drain region 21D and has at least two conductive regions with different average grain sizes. Characteristics of the driving elements are made substantially uniform so that a display quality of the display device can be improved remarkably.

Abstract: There is provided an active matrix display including pixels arrayed in a matrix form and each including a display element and a thin film transistor. In each of columns which the pixels form, the pixels are divided into a first pixel group in which the thin film transistors are arranged along a first straight line parallel with the column, and a second pixel group in which the thin film transistors are arranged along a second straight line parallel with the column and spaced apart from the first straight line.

Abstract: The present invention provides a light-emitting display device to improve the throughput efficiency of light transmitting from the light-projecting surface. The light-emitting display device is provided with a plurality of anodes isolated from each other by isolating films in the shape of islands, cathodes arranged opposite to the anodes and a plurality of pixels disposed in the form of a matrix. The pixels are held between the anodes and the cathodes. Each of the pixels has at least a thin film layer including a luminous layer which emits light when a predetermined voltage is applied between the anode and the cathode. The anode defines the light-projecting surface to transmit light from the organic thin film. The cathode is provided with a declined surface between adjacent ones of the pixels. The declined surface defines an acute angle with respect to the light-projecting surface.

Abstract: Standard samples including at least a polycrystalline semiconductor film are produced by the energy beam annealing method. Dependencies on wavelength of refractive index and damping coefficients of standard samples are measured by means of a spectral ellipsometer, and grain sizes are measured to be quantified. An estimated sample consisting of a polycrystalline semiconductor film is produced by means of the energy beam annealing method. A dependency on wavelength of a refractive index and a damping coefficient of the estimated sample is measured to be compared with the results of the standard sample. Thus, the optically measured results can be quantified, so that it is possible to accurately measure a mean grain size of a polycrystalline silicon of a sample to be estimated, in a short time of about 5 seconds to calculate mobility to accurately select non-defective from defective in a short time.

Abstract: The present invention provides a light-emitting display device to improve the throughput efficiency of light transmitting from the light-projecting surface. The light-emitting display device is provided with a plurality of anodes isolated from each other by isolating films in the shape of islands, cathodes arranged opposite to the anodes and a plurality of pixels disposed in the form of a matrix. The pixels are held between the anodes and the cathodes. Each of the pixels has at least a thin film layer including a luminous layer which emits light when a predetermined voltage is applied between the anode and the cathode. The anode defines the light-projecting surface to transmit light from the organic thin film. The cathode is provided with a declined surface between adjacent ones of the pixels. The declined surface defines an acute angle with respect to the light-projecting surface.

Abstract: A method of manufacturing a poly-crystalline silicon (p-Si) film includes the steps in which an excimer laser anneals an amorphous silicon (a-Si) film deposited on a glass substrate and makes the same into the poly-crystalline silicon while the glass substrate is moved in a moving direction relative to the laser. Prior to carrying out the annealing step, a couple of the laser pulses are applied to different places of the a-Si film, provided that each of the laser pulses has different energy fluence and one pulse at a time is applied to the a-Si film. The pulse applied area is divided into two sections by a reference line perpendicular to the moving direction of the glass substrate. Average grain sizes of the p-Si film in the two sections are compared to each other to determine the moving direction.

Abstract: The present invention proves a method and apparatus for manufacturing a polysilicon TFT without a defective activated area in a channel region below a gate. According to the instant invention, a dopant is implanted into a polysilicon thin film formed on an substrate with a gate having a tapered edge which is used as a mask to form a source and a drain. An energy beam then slantingly irradiates from the side of the edge of the gate to the surface of the substrate. Thus, the source and drain are activated and, at the same time, the energy beam streams into the polysilicon thin film below the edge of the gate to activate the channel region implanted the dopant.

Abstract: In a color cathode ray tube having a glass envelope and panel, a shadow mask is positioned adjacent a phosphor screen in the panel. Supporting members secure the shadow mask to the panel. These supporting members are responsive to the heat generated in the shadow mask to compensate for the thermal expansion of the shadow mask by displacing the shadow mask toward the phosphor screen. The supporting members each comprise a pair of plate-like segments spaced apart along at least a portion of their lengths. The plate-like segments are formed of metals having different coefficients of thermal expansion. No bi-metallic elements are used to form the plate-like segments of the supporting members.