Patents by Inventor Yasumiti Yasuda

Yasumiti Yasuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Composite semiconductor device with Schottky and pn junctions
    Patent number: 5278443
    Abstract: A semiconductor device includes a diode having a Schottky barrier and a MOS transistor integrally formed in one and the same semiconductor substrate in which the diode and MOS transistor have their main electrode in common use. The diode has a first diode portion having a pn junction in a current-passing direction and a second diode portion having a combination of the Schottky barrier and another pn junction in the current passing direction.
    Type: Grant
    Filed: November 5, 1992
    Date of Patent: January 11, 1994
    Assignees: Hitachi, Ltd., Hitachi Haramachi Semiconductor, Ltd.
    Inventors: Mutsuhiro Mori, Yasumiti Yasuda, Naoki Sakurai, Hidetoshi Arakawa, Hiroshi Owada
  • Semiconductor Schottky barrier device with pn junctions
    Patent number: 5166760
    Abstract: A semiconductor device is provided wherein a first diode having a pn junction and a second diode having a combination of a Schottky barrier and a pn junction in a current-passing direction are provided side by side in a direction perpendicular to the current-passing direction. When a forward current with a current density J.sub.F is passed into the second diode, the relation ##EQU1## is established in a forward voltage V.sub.F range of 0.1 (V) to 0.3 (V), where k represents the Boltzmann constant (.apprxeq.1.38.times.10.sup.-23 J/K), T represents the absolute temperature, and q represents the quantity of electron charges (.apprxeq.1.6.times.10.sup.-19 C).
    Type: Grant
    Filed: February 11, 1992
    Date of Patent: November 24, 1992
    Assignees: Hitachi, Ltd., Hitachi Haramachi Semiconductor Ltd.
    Inventors: Mutsuhiro Mori, Yasumiti Yasuda, Naoki Sakurai, Hidetoshi Arakawa, Hiroshi Owada
  • Semiconductor schottky device with pn regions
    Patent number: 5101244
    Abstract: A semiconductor device has a first diode having a pn junction and a second diode having a combination of a Schottky barrier and a pn junction in a current-passing direction provided side by side in a direction perpendicular to the current-passing direction. When a forward current with a current density J.sub.F is passed into the second diodes, the relation ##EQU1## is established in a forward voltage V.sub.F range of 0.1 (V) to 0.3 (V), where k represents the Boltzmann constant, T represents the absolute temperature, and q represents the quantity of electron charges.
    Type: Grant
    Filed: February 26, 1991
    Date of Patent: March 31, 1992
    Assignees: Hitachi, Ltd., Hitachi Haramachi Semiconductor Ltd.
    Inventors: Mutsuhiro Mori, Yasumiti Yasuda, Naoki Sakurai, Hidetoshi Arakawa, Hiroshi Owada