Abstract: A processing device is provided, including a base which holds a processing target. A gas providing passage having a circular cross section is formed in the base, and provides gas to an outer circumference of the base.

Abstract: A gas providing member includes a body portion which forms a gas providing passage between the body portion and a processing member which holds the processing target, and the gas providing passage provides gas onto a processing target. In the body portion, a gas reservoir portion located in the gas providing passage is formed.

Abstract: A plasma processing member includes a ceramic base, a plasma generating electrode embedded in the ceramic base, and an electrode power supply member connected to the plasma generating electrode. The impedance of the plasma processing member when plasma is generated using high frequency power at a frequency higher than 13.56 MHz is adjusted to 25? or less.

Abstract: A substrate processing device is provided, which includes a resistance heating element and a high-frequency electrode, to which a voltage is applied, a power supply member for a resistance heating element, and a power supply member for a high-frequency electrode, which supply power to the resistance heating element and the high-frequency electrode, respectively, a peripheral member disposed close to circumferences of the power supply members, and heat insulators arranged between the power supply members and the peripheral member and having heat resistance to a temperature at least higher than 250° C.

Abstract: Disclosed is a substrate processing device capable of reducing damage of a peripheral member when a power supply member generates heat. The substrate processing device includes: a resistance heating element and a high-frequency electrode, to which a voltage is applied; a power supply member for a resistance heating element, and a power supply member for a high-frequency electrode, which supply power to the resistance heating element and the high-frequency electrode, respectively; a peripheral member disposed close to circumferences of these power supply members; and heat insulators arranged between the power supply members and the peripheral member and having heat resistance to a temperature at least higher than 250° C.

Abstract: To provide a plasma processing device in which an amount of heat generated from a power supply member is small when the power supply member is supplied with high frequency current. A substrate heater as the plasma processing device includes a ceramic base including a high frequency electrode and a high frequency electrode power supply member supplying high frequency current to the high frequency electrode. The high frequency electrode power supply member includes a power supply body and a high conductivity metal layer which is formed on the outer peripheral surface of the power supply body and has a conductivity higher than that of the power supply body.

Abstract: A processing device includes a base which holds a processing target. In the base, a gas providing passage circular in cross section, which provides gas to an outer circumference of the base, is formed.

Abstract: A gas providing member includes a body portion which forms a gas providing passage between the body portion and a processing member which holds the processing target, and the gas providing passage provides gas onto a processing target. In the body portion, a gas reservoir portion located in the gas providing passage is formed.

Abstract: A plasma processing member includes a ceramic base, a plasma generating electrode embedded in the ceramic base, and an electrode power supply member connected to the plasma generating electrode. The impedance of the plasma processing member when plasma is generated using high frequency power at a frequency higher than 13.56 MHz is adjusted to 25? or less.