Abstract: A thin-film type photoelectric conversion device for use in an image input unit of facsimile equipment, a scanner and the like, which uses a thin-film semiconductor as a phoconductive layer to reading not only a monochromatic image but also a color image with high resolution. A photoelectric conversion device having a photoconductive layer disposed between opposing electrodes, in which a surface facing in a direction perpendicular to a direction of film deposition of the photoconductive layer acting as a light-receiving surface.

Abstract: A method of manufacturing an image sensor comprising light-receiving elements, thin film transistor switching elements, and a group of lines, in which the metal electrode portion of each light-receiving element, the source and drain electrode portions of each thin film transistor switching element, and the intermediate ground wiring layer of the group of wiring lines can be formed simultaneously. As a result, the image sensor can be prepared with ease under an efficient process.

Abstract: An image sensor having an photodetecting element array including a plurality of blocks linearly arrayed in a main scan direction, each block consisting of a plurality of photodetecting elements, a plurality of switching elements for transferring every block charges generated in the photodetecting elements, and drive ICs for outputting the charges in the form of image signals. In the image sensor, the switching elements in a block of the photodetecting element array and the switching elements in another block located adjacent to the former block are connected by wires in such a way that the switching elements closest to each other between the blocks are interconnected, the switching elements next close to each other are interconnected, and so on.

Abstract: In an electroluminescent panel comprising transparent and back electrode members opposite to each other and an electroluminescent laminate block between the transparent and the back electrode members, a fluororesin layer is coated on the electroluminescent laminate block together with the back electrode member so as to prevent invasion of moisture into the electroluminescent laminate block. The fluororesin layer has a thickness not thinner than 500 angstroms and may be formed by a fluororesin selected from a group consisting of polytetrafluoroethylene, polychlorofluoroethylene, polyvinylidene fluoride, and trifluoroethylene.

Abstract: An image sensor having an photodetecting element array including a plurality of blocks linearly arrayed in a main scan direction, each block consisting of a plurality of photodetecting elements, a plurality of switching elements for transferring every block charges generated in the photodetecting elements, and drive ICs for outputting the charges in the form of image signals. In the image sensor, the switching elements in a block of the photodetecting element array and the switching elements in another block located adjacent to the former block are connected by wires in such a way that the switching elements closest to each other between the blocks are interconnected, the switching elements next close to each other are interconnected, and so on.

Abstract: In an EL element of this invention, a thin film layer is formed between a transparent substrate and a layer formed adjacent to the transparent substrate, and the refractive index of the thin film layer is changed to be approximated to those of these layers toward the interfaces between the thin film layer and the corresponding layers, so that a difference in refractive index at these interfaces is minimized. The thin film layer may be formed between at least two adjacent layers formed on the transparent substrate.

Abstract: In an electroluminescent panel comprising a transparent electrode, a back electrode, and an electroluminescent layer between the transparent and the back electrodes, an intermediate layer is interposed between the electroluminescent layer and the back electrode and essentially consists of germanium and nitrogen. The intermediate layer serves as a light absorption layer for absorbing ambient light. A nitrogen distribution in the intermediate layer may be either substantially uniform or decreased from the electroluminescent layer side towards the back electrode side. The decrease may be made stepwise or continuously. The intermediate layer may be superposed through a dielectric layer or directly on the electroluminescent layer.

Abstract: In an electroluminescent panel comprising a transparent electrode, a back electrode, an electroluminescent layer between the transparent and the back electrodes, and a dielectric layer between the transparent electrode and the electroluminescent layer, an intermediate layer consisting of silicon is interposed between the transparent electrode and the dielectric layer. The silicon layer may have a thickness between 10 angstroms and 200 angstroms. The silicon layer may be deposited on the transparent electrode by the use of a selected one of sputtering, vacuum evaporation, chemical vapor deposition, and ion plating techniques.

Abstract: In an electroluminescent panel which in turn comprises a transparent electrode member on a transparent substrate, a first dielectric layer, an electroluminescent layer, a second dielectric layer, and a back electrode member, at least one of the first and the second dielectric layers is divided into first and second partial dielectric films nearer to and farther from the transparent electrode member, respectively. The first partial dielectric film is deposited in a nonoxidization atmosphere by the use of a pellet which essentially consists of silicon and oxygen. Thereafter, the second partial dielectric film is deposited on the first partial dielectric film in an oxygen atmosphere and has a relative dielectric constant greater than the first partial dielectric film. Alternatively, each of the first and the second dielectric layers may comprise the first partial dielectric film of silicon and oxide and the second partial dielectric film mentioned above.