Abstract: A semiconductor device without erroneous operation and deterioration of characteristics in a transistor even when an impurity region is formed in self-alignment by ion implantation using a gate electrode as a mask, and a method of manufacturing thereof are disclosed. This semiconductor device includes a gate electrode formed of a polycrystal silicon layer 4b having the crystal orientation of the crystal grains arranged in a definite orientation. By implanting ions at a predetermined angle with respect to the crystallographic axis of the crystal grains of the polycrystal silicon layer 4b in forming a p.sup.+ impurity region 5 by ion implantation using the gate electrode as a mask, the channeling phenomenon where ions pass through the gate electrode is prevented. Therefore, generation of erroneous operation and deterioration of characteristics in a transistor are prevented in forming an impurity region in self-alignment by ion implantation using the gate electrode as a mask.

Abstract: A semiconductor device not aggravated in transistor characteristic even when an impurity region is formed by ion implantation using a gate electrode as a mask, and a method of manufacturing thereof are disclosed. The semiconductor device includes a gate electrode 10 implemented by a polycrystal silicon layer 4 having the crystal orientation of the crystal grains thereof arranged in a predetermined orientation, and a single crystal silicon layer 5 formed on the polycrystal silicon layer 4 having a crystal orientation identical to that of the polycrystal silicon layer 4. The channelling phenomenon in which B.sup.+ ions pass through to beneath the gate electrode 10 is prevented in forming an impurity region 6 by ion implantation to obtain a semiconductor device that does not have the characteristic of the formed transistor aggravated.

Abstract: A semiconductor device not aggravated in transistor characteristic even when an impurity region is formed by ion implantation using a gate electrode as a mask, and a method of manufacturing thereof are disclosed. The semiconductor device includes a gate electrode 10 implemented by a polycrystal silicon layer 4 having the crystal orientation of the crystal grains thereof arranged in a predetermined orientation, and a single crystal silicon layer 5 formed on the polycrystal silicon layer 4 having a crystal orientation identical to that of the polycrystal silicon layer 4. The channelling phenomenon in which B.sup.+ ions pass through to beneath the gate electrode 10 is prevented in forming an impurity region 6 by ion implantation to obtain a semiconductor device that does not have the characteristic of the formed transistor aggravated.