Abstract: A fuzzy logic circuit for operating a fuzzy logic with "fuzziness" taken into account has an operation section memory unit in which the result of operation to be outputted in response to an input is stored in an address specified by the input, the result of operation being rewritable, whereby the change in the contents of a fuzzy logic operation to be performed can be handled merely by rewriting the contents of the operation section memory unit.

Abstract: A method of manufacturing a semiconductor device having a high voltage CMOS unit for an ordinary logic operation and a MOS unit which are provided in a single semiconductor substrate of a first conduction type. The method includes the steps of performing an element region making process for making a well of a second conduction type in the substrate, performing a process for providing field-effect transistors having channels of mutually different conduction types in the substrate and the well, and then performing a process for providing electrode wiring layers. Finally, a process is performed for providing a first impurity region having a particular conduction type and serving as a channel stopper of the CMOS unit and a second impurity region having the conduction type of the first impurity region and serving as an offset low-resistance layer of the high voltage MOS unit.