Patents by Inventor Yasunari Hino
Yasunari Hino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240136309Abstract: Provided is a semiconductor device with higher reliability and longer life which can suppress an increase in production costs. A semiconductor device includes: a semiconductor element; a top electrode on an upper surface of the semiconductor element; and a conductive metal plate containing copper as a main component and solid-state diffusion bonded to the top electrode of the semiconductor element.Type: ApplicationFiled: July 25, 2023Publication date: April 25, 2024Applicant: Mitsubishi Electric CorporationInventors: Yasunari HINO, Junichi YAMASHITA, Koji TANAKA, Tomohide TERASHIMA, Shinichi IZUO
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Publication number: 20240030087Abstract: Provided are a semiconductor device with a bonding strength ensured between an electrode of a semiconductor element and a terminal, and a power conversion device including the semiconductor device. A semiconductor device includes: a semiconductor element having an electrode; a substrate; a terminal; and a bonding material. The terminal has a through hole and has a step portion in the inside of the through hole. The bonding material covers the step portion in the inside of the through hole and is in contact with the electrode of the semiconductor element.Type: ApplicationFiled: June 8, 2023Publication date: January 25, 2024Applicant: Mitsubishi Electric CorporationInventors: Yasunari HINO, Yasuo TANAKA, Shinnosuke SODA
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Publication number: 20220028794Abstract: There is provided a semiconductor device including an insulating substrate provided with a circuit surface, and an external terminal bonded to the circuit surface. The circuit surface has an upper surface that is in contact with and bonded to a part of a lower surface of the external terminal. In at least a part of a portion where the upper surface of the circuit surface and the lower surface of the external terminal are in contact with each other, a melted portion of the circuit surface and the external terminal is formed. A gap between the upper surface of the circuit surface and the lower surface of the external terminal has a size of 20 ?m or less. The circuit surface and the external terminal are each made of copper or copper alloy.Type: ApplicationFiled: October 5, 2021Publication date: January 27, 2022Applicant: Mitsubishi Electric CorporationInventors: Yasunari HINO, Yo TANAKA, Masao KIKUCHI
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Patent number: 11183457Abstract: There is provided a semiconductor device including an insulating substrate provided with a circuit surface, and an external terminal bonded to the circuit surface. The circuit surface has an upper surface that is in contact with and bonded to a part of a lower surface of the external terminal. In at least a part of a portion where the upper surface of the circuit surface and the lower surface of the external terminal are in contact with each other, a melted portion of the circuit surface and the external terminal is formed. A gap between the upper surface of the circuit surface and the lower surface of the external terminal has a size of 20 ?m or less. The circuit surface and the external terminal are each made of copper or copper alloy.Type: GrantFiled: June 17, 2019Date of Patent: November 23, 2021Assignee: Mitsubishi Electric CorporationInventors: Yasunari Hino, Yo Tanaka, Masao Kikuchi
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Publication number: 20210010158Abstract: Provided are a silicon carbide epitaxial growth device capable of fostering epitaxial growth on a silicon carbide substrate. Mounting a wafer holder loaded with a silicon carbide substrate and a tantalum carbide member to a turntable in a susceptor, and supplying a growth gas, a doping gas, and a carrier gas into the susceptor by heating by induction heating coils placed around the susceptor, thereby epitaxial growth is fostered, and stable and proper device characteristics are obtained, moreover, the yield in a manufacturing step of the silicon carbide epitaxial wafer is significantly improved.Type: ApplicationFiled: April 29, 2020Publication date: January 14, 2021Applicant: Mitsubishi Electric CorporationInventors: Masashi SAKAI, Shinichiro KATSUKI, Kazuo KOBAYASHI, Yasunari HINO
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Patent number: 10615131Abstract: The semiconductor device includes a metal plate, a semiconductor element held on the metal plate, a wiring board connected to a surface electrode of the semiconductor element in a facing manner and a conductor fixed to the wiring board wired to the semiconductor element. The conductor has a plate-like shape. One end of the conductor is arranged to be connectable to an outside. One surface side of another end of the conductor is fixed to a surface of the wiring hoard. The conductor includes at least one protruding step on the one surface of the other end. A top portion of the protruding step includes a contact surface parallel to the surface of the wiring board. The other end of the conductor is fixed to the wiring board by the contact surface and the surface of the wiring board coming into close contact with each other.Type: GrantFiled: August 27, 2018Date of Patent: April 7, 2020Assignee: Mitsubishi Electric CorporationInventor: Yasunari Hino
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Patent number: 10546800Abstract: A semiconductor module includes: a semiconductor device having an upper surface electrode; a conductor plate joined to the upper surface electrode via a bonding member; and a wire bonded to the conductor plate, wherein the wire is a metal thread or a ribbon bond, and the bonding member is a porous sintered metal material impregnated with resin.Type: GrantFiled: April 12, 2018Date of Patent: January 28, 2020Assignee: Mitsubishi Electric CorporationInventors: Yasunari Hino, Yuji Sato
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Publication number: 20200027839Abstract: There is provided a semiconductor device including an insulating substrate provided with a circuit surface, and an external terminal bonded to the circuit surface. The circuit surface has an upper surface that is in contact with and bonded to a part of a lower surface of the external terminal. In at least a part of a portion where the upper surface of the circuit surface and the lower surface of the external terminal are in contact with each other, a melted portion of the circuit surface and the external terminal is formed. A gap between the upper surface of the circuit surface and the lower surface of the external terminal has a size of 20 ?m or less. The circuit surface and the external terminal are each made of copper or copper alloy.Type: ApplicationFiled: June 17, 2019Publication date: January 23, 2020Applicant: Mitsubishi Electric CorporationInventors: Yasunari HINO, Yo TANAKA, Masao KIKUCHI
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Patent number: 10475721Abstract: In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.Type: GrantFiled: March 12, 2019Date of Patent: November 12, 2019Assignee: Mitsubishi Electric CorporationInventors: Yasunari Hino, Kiyoshi Arai
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Publication number: 20190214326Abstract: In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.Type: ApplicationFiled: March 12, 2019Publication date: July 11, 2019Applicant: Mitsubishi Electric CorporationInventors: Yasunari HINO, Kiyoshi ARAI
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Patent number: 10283430Abstract: In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.Type: GrantFiled: August 11, 2016Date of Patent: May 7, 2019Assignee: Mitsubishi Electric CorporationInventors: Yasunari Hino, Kiyoshi Arai
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Publication number: 20190131210Abstract: A semiconductor module includes: a semiconductor device having an upper surface electrode; a conductor plate joined to the upper surface electrode via a bonding member; and a wire bonded to the conductor plate, wherein the wire is a metal thread or a ribbon bond, and the bonding member is a porous sintered metal material impregnated with resin.Type: ApplicationFiled: April 12, 2018Publication date: May 2, 2019Applicant: Mitsubishi Electric CorporationInventors: Yasunari HINO, Yuji SATO
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Publication number: 20190122998Abstract: The semiconductor device includes a metal plate, a semiconductor element held on the metal plate, a wiring board connected to a surface electrode of the semiconductor element in a facing manner and a conductor fixed to the wiring board wired to the semiconductor element. The conductor has a plate-like shape. One end of the conductor is arranged to be connectable to an outside. One surface side of another end of the conductor is fixed to a surface of the wiring hoard. The conductor includes at least one protruding step on the one surface of the other end. A top portion of the protruding step includes a contact surface parallel to the surface of the wiring board. The other end of the conductor is fixed to the wiring board by the contact surface and the surface of the wiring board coming into close contact with each other.Type: ApplicationFiled: August 27, 2018Publication date: April 25, 2019Applicant: Mitsubishi Electric CorporationInventor: Yasunari HINO
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Patent number: 9698078Abstract: A semiconductor module of the present invention includes: a semiconductor element having a first main surface and a second main surface facing the first main surface, the semiconductor element including a front surface electrode and a back surface electrode on the first main surface and the second main surface, respectively; a metal plate electrically connected to the back surface electrode of the semiconductor element through a sintered bonding material including metal nanoparticles; and a plate-shaped conductor electrically connected to the front surface electrode of the semiconductor element through the sintered bonding material including the metal nanoparticles. The metal plate and the conductor include grooves communicating between a bonding region bonded to the semiconductor element and the outside of the bonding region.Type: GrantFiled: July 29, 2014Date of Patent: July 4, 2017Assignee: Mitsubishi Electric CorporationInventor: Yasunari Hino
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Publication number: 20170178995Abstract: In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.Type: ApplicationFiled: August 11, 2016Publication date: June 22, 2017Applicant: Mitsubishi Electric CorporationInventors: Yasunari HINO, Kiyoshi ARAI
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Patent number: 9627350Abstract: A method for manufacturing a semiconductor device according to the present invention includes: (a) disposing, on a substrate (insulating substrate), a bonding material having a sheet shape and having sinterability; (b) disposing a semiconductor element on the bonding material after the (a); and (c) sintering the bonding material while applying pressure to the bonding material between the substrate and the semiconductor element. The bonding material includes particles of Ag or Cu, and the particles are coated with an organic film.Type: GrantFiled: December 4, 2015Date of Patent: April 18, 2017Assignee: Mitsubishi Electric CorporationInventors: Yasunari Hino, Daisuke Kawabata
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Publication number: 20160322327Abstract: A method for manufacturing a semiconductor device according to the present invention includes: (a) disposing, on a substrate (insulating substrate), a bonding material having a sheet shape and having sinterability; (b) disposing a semiconductor element on the bonding material after the (a); and (c) sintering the bonding material while applying pressure to the bonding material between the substrate and the semiconductor clement. The bonding material includes particles of Ag or Cu, and the particles are coated with an organic film.Type: ApplicationFiled: December 4, 2015Publication date: November 3, 2016Applicant: Mitsubishi Electric CorporationInventors: Yasunari HINO, Daisuke KAWABATA
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Patent number: 9362242Abstract: A bonding structure including metal nano particles includes a first member having a metal surface on at least one side, a second member having a metal surface on at least one side, the second member being disposed such that the metal surface of the second member faces the metal surface of the first member, and a bonding material bonding the first member and the second member by sinter-bonding the metal nano particles. At least one of the metal surfaces of the first member and the second member is formed to be a rough surface having a surface roughness within the range from 0.5 ?m to 2.0 ?m.Type: GrantFiled: April 8, 2014Date of Patent: June 7, 2016Assignee: MITSUBISHI ELECTRIC CORPORATIONInventors: Aya Iwata, Yasunari Hino
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Patent number: 9324684Abstract: A manufacturing method of a semiconductor device according to the present invention includes the steps of (a) preparing an insulating or conductive substrate; (b) arranging a bonding material having sinterability in at least one bonding region of a principal surface of the substrate (i.e., insulating substrate); and (c) sintering the bonding material while a bonding surface to be subjected to bonding of at least one semiconductor element is brought into pressurized contact with the bonding material, and bonding the substrate (i.e., insulating substrate) and the semiconductor element together through the bonding material. The bonding region in the step (b) is inwardly positioned from the bonding surface (i.e., region) of the semiconductor element in plan view, and the bonding material is not protruded outwardly from the bonding surface of the semiconductor element in plan view even after the step (c).Type: GrantFiled: September 17, 2014Date of Patent: April 26, 2016Assignee: MITSUBISHI ELECTRIC CORPORATIONInventor: Yasunari Hino
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Publication number: 20150130076Abstract: A semiconductor module of the present invention includes: a semiconductor element having a first main surface and a second main surface facing the first main surface, the semiconductor element including a front surface electrode and a back surface electrode on the first main surface and the second main surface, respectively; a metal plate electrically connected to the back surface electrode of the semiconductor element through a sintered bonding material including metal nanoparticles; and a plate-shaped conductor electrically connected to the front surface electrode of the semiconductor element through the sintered bonding material including the metal nanoparticles. The metal plate and the conductor include grooves communicating between a bonding region bonded to the semiconductor element and the outside of the bonding region.Type: ApplicationFiled: July 29, 2014Publication date: May 14, 2015Applicant: Mitsubishi Electric CorporationInventor: Yasunari HINO