Patents by Inventor Yasunari Kanda

Yasunari Kanda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240229101
    Abstract: The present invention provides a method for evaluating intracellular or extracellular enzyme activity of CYP enzyme group, including a step of measuring the number of molecules of oxidized CYP enzyme group.
    Type: Application
    Filed: June 22, 2022
    Publication date: July 11, 2024
    Applicants: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, OSAKA UNIVERSITY
    Inventors: Yasunori NAWA, Menglu LI, Seiichi ISHIDA, Yasunari KANDA, Satoshi FUJITA, Katsumasa FUJITA
  • Patent number: 5045905
    Abstract: An amorphous silicon thin film transistor includes a gate electrode, an amorphous silicon layer on the gate insulating layer, a drain electrode and a source electrode on the amorphous silicon layer such that a portion of the side of the amorphous silicon layer which faces away from the gate electrode is exposed, and an impurity layer for reducing an off current of the transistor, the impurity layer including an impurity forming an acceptor and which is formed on the exposed portion of the amorphous silicon layer, the amorphous silicon layer being of a first conduction type and the acceptor being of a second different conduction type.
    Type: Grant
    Filed: December 12, 1990
    Date of Patent: September 3, 1991
    Assignees: Nippon Precision Circuits Ltd., Seikosha Co., Ltd.
    Inventors: Noboru Motai, Yoshihisa Ogiwara, Yasunari Kanda
  • Patent number: 4916090
    Abstract: A method for manufacturing a amorphous silicon thin film transistor comprises exposing an morphous silicon layer situated between a source electrode and a drain electrode to a gas phase atmosphere having a gas containing an impurity forming an acceptor, then activating said impurity with an electric field or light energy and doping the activated impurity into said amorphous silicon layer. The gas may be a hydrogen compound and it may include an oxidizing gas.
    Type: Grant
    Filed: March 13, 1989
    Date of Patent: April 10, 1990
    Assignees: Nippon Precision Circuits Ltd., Seikosha Co., Ltd.
    Inventors: Noboru Motai, Yoshihisa Ogiwara, Yasunari Kanda