Patents by Inventor Yasunari Mori

Yasunari Mori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10746765
    Abstract: A data processing method and a measurement device is provided in which an electromagnetic wave radiates toward an object to be measured and measurement data obtained by measuring reflected wave of the electromagnetic wave reflected from the object to be measured is processed. First processing data S(kx, ky, ?) is acquired by performing discrete Fourier transform (DFT) relating to an x-coordinate component and a y-coordinate component on measurement data s(x?, y?, ?). Then, an angular frequency ? is converted into a kz component after extending a range from which a ky component can vary, thereby calculating second processing data S?(kx, ky, kz). Then, the second processing data is subjected to inverse Fourier transform to calculate data f(x, y, z) of reflexibility of the object to be measured. In the extension of the ky component, local maximum value processing and a process of suppressing generation of an aliasing component using a ratio are performed.
    Type: Grant
    Filed: December 14, 2017
    Date of Patent: August 18, 2020
    Assignee: Mitsui E&S Machinery Co., Ltd.
    Inventor: Yasunari Mori
  • Patent number: 10669630
    Abstract: A layer-forming device includes a feeding mechanism that feeds a substrate during layer formation, an injector unit having a plurality of injectors that supplies a layer-forming gas to the substrate, along a feeding passage of the substrate, and a reactant supply unit which generates a reactant. The injector unit supplies the reactant through gaps between the injectors to a layer of the layer-forming component. A substrate opposing surface of the injector includes a layer-forming gas supply slot through which the layer-forming gas is output, first gas exhaust slots that suck an excess gas such as the layer-forming gas, the first gas exhaust slots being provided on both sides of the layer-forming gas supply slot in a feeding direction of the substrate, and inert gas supply slots that supply an inert gas provided on far sides of the respective first gas exhaust slots away from the layer-forming gas supply slot.
    Type: Grant
    Filed: February 21, 2014
    Date of Patent: June 2, 2020
    Assignee: MITSUI E&S MACHINERY CO., LTD.
    Inventors: Nozomu Hattori, Naomasa Miyatake, Yasunari Mori
  • Patent number: 10246776
    Abstract: A layer-forming device that enables highly efficient layer formation and has a simplified configuration includes: a substrate feeding mechanism; a plasma-generating electrode; a space-partitioning wall; and a plurality of injectors. The plasma-generating electrode faces towards a feeding pathway of the substrate, and generates plasma using a reactive gas upon a supply of electric power. The space-partitioning wall is disposed between the feeding pathway and the plasma-generating electrode. A plurality of slit-shaped through-holes, through which radicals, ions generated from the plasma, or a portion of the plasma can pass, are formed at predetermined intervals in the space-partitioning wall.
    Type: Grant
    Filed: February 21, 2014
    Date of Patent: April 2, 2019
    Assignee: MITSUI E&S MACHINERY CO., LTD
    Inventors: Yasunari Mori, Naomasa Miyatake, Nozomu Hattori
  • Publication number: 20180246148
    Abstract: A data processing method and a measurement device is provided in which an electromagnetic wave radiates toward an object to be measured and measurement data obtained by measuring reflected wave of the electromagnetic wave reflected from the object to be measured is processed. First processing data S(kx, ky, ?) is acquired by performing discrete Fourier transform (DFT) relating to an x-coordinate component and a y-coordinate component on measurement data s(x?, y?, ?). Then, an angular frequency ? is converted into a kz component after extending a range from which a ky component can vary, thereby calculating second processing data S?(kx, ky, kz). Then, the second processing data is subjected to inverse Fourier transform to calculate data f(x, y, z) of reflexibility of the object to be measured. In the extension of the ky component, local maximum value processing and a process of suppressing generation of an aliasing component using a ratio are performed.
    Type: Application
    Filed: December 14, 2017
    Publication date: August 30, 2018
    Inventor: Yasunari Mori
  • Patent number: 9746555
    Abstract: The planar antenna has a dielectric substrate; an antenna main body portion including first and second antenna elements on first and second sides, respectively, of the dielectric substrate and functioning as a balanced antenna; a signal line portion including first and second feed lines on the first and second sides, respectively, and a coplanar line on the first side and formed by a signal line and the first ground conductors, the signal line connected to the first feed line; a second ground conductor on the second side and connected to the second feed line; and via holes connecting the first ground conductors to the second ground conductor provided at ends of edges of the first ground conductors facing the end of the signal line where the signal line connects to the first feed line, to allow the first and second feed lines to function as balanced transmission lines.
    Type: Grant
    Filed: November 6, 2014
    Date of Patent: August 29, 2017
    Assignee: MITSUI ENGINEERING & SHIPBUILDING CO., LTD.
    Inventors: Yasunari Mori, Kyouji Doi, Takayoshi Yumii, Yumi Asano
  • Publication number: 20160237566
    Abstract: When a film is formed atomic layer by atomic layer with a use of a raw material gas and a reaction gas, a raw material gas is supplied into a film-forming space in which a substrate is placed to adsorb a component of the raw material gas onto the substrate. Then, a reaction gas is supplied into the film-forming space. Plasma is produced in the film-forming space using the reaction gas supplied so that part of a component of the raw material gas adsorbed on the substrate reacts with the reaction gas. At this moment, a duration of production of the plasma is set within a range of 0.5 millisecond to 100 milliseconds according to a degree of at least one property of a film to be formed, and a density of power input to the plasma source is in a range of 0.05 W/cm2 to 10 W/cm2.
    Type: Application
    Filed: March 13, 2014
    Publication date: August 18, 2016
    Inventors: Nozomu HATTORI, Naomasa MIYATAKE, Yasunari MORI, Yoshiharu NAKASHIMA
  • Publication number: 20160010209
    Abstract: A layer-forming device includes a feeding mechanism that feeds a substrate during layer formation, an injector unit having a plurality of injectors that supplies a layer-forming gas to the substrate, along a feeding passage of the substrate, and a reactant supply unit which generates a reactant. The injector unit supplies the reactant through gaps between the injectors to a layer of the layer-forming component. A substrate opposing surface of the injector includes a layer-forming gas supply slot through which the layer-forming gas is output, first gas exhaust slots that suck an excess gas such as the layer-forming gas, the first gas exhaust slots being provided on both sides of the layer-forming gas supply slot in a feeding direction of the substrate, and inert gas supply slots that supply an inert gas provided on far sides of the respective first gas exhaust slots away from the layer-forming gas supply slot.
    Type: Application
    Filed: February 21, 2014
    Publication date: January 14, 2016
    Inventors: Nozomu HATTORI, Naomasa MIYATAKE, Yasunari MORI
  • Publication number: 20160002785
    Abstract: A layer-forming device that enables highly efficient layer formation and has a simplified configuration includes: a substrate feeding mechanism; a plasma-generating electrode; a space-partitioning wall; and a plurality of injectors. The plasma-generating electrode faces towards a feeding pathway of the substrate, and generates plasma using a reactive gas upon a supply of electric power. The space-partitioning wall is disposed between the feeding pathway and the plasma-generating electrode. A plurality of slit-shaped through-holes, through which radicals, ions generated from the plasma, or a portion of the plasma can pass, are formed at predetermined intervals in the space-partitioning wall.
    Type: Application
    Filed: February 21, 2014
    Publication date: January 7, 2016
    Applicant: MITSUI ENGINEERING & SHIPBUILDING CO., LTD.
    Inventors: Yasunari MORI, Naomasa MIYATAKE, Nozomu HATTORI
  • Patent number: 9194043
    Abstract: An atomic layer deposition apparatus for forming a thin film on a substrate, including a first container that defines a first inner space, a second container provided inside the first container to define a second inner space, the second container being canister-shaped and including a first opening at one end thereof, a source gas that forms the thin film on the substrate flowing to the second inner space through the first opening, and a pressing member including a gas supply port for supplying the source gas to the second inner space through the first opening, the pressing member being configured to press the second container in a longitudinal direction of the second container so that the second inner space be separated from the first inner space.
    Type: Grant
    Filed: February 15, 2010
    Date of Patent: November 24, 2015
    Assignee: MITSUI ENGINEERING & SHIPBUILDING
    Inventors: Hiroyuki Tachibana, Kazutoshi Murata, Naomasa Miyatake, Yasunari Mori
  • Patent number: 9068261
    Abstract: An atomic layer deposition apparatus, which forms a thin film on a substrate, includes a first container that defines a first inner space and includes a substrate carrying-in and carrying-out port and a gas introduction port in different positions, the substrate being carried in and out through the substrate carrying-in and carrying-out port, gas being introduced through the gas introduction port to form the thin film on the substrate, a second container that is provided in the first container to define a second inner space separated from the first inner space, the second container including a first opening, a first moving mechanism that moves the second container in a predetermined direction, and a controller that controls the first moving mechanism such that the second container is moved to a first position where the substrate carrying-in and carrying-out port and the first opening are located opposite each other when the substrate is carried in and out, the controller controlling the first moving mechanism
    Type: Grant
    Filed: March 3, 2010
    Date of Patent: June 30, 2015
    Assignee: MITSUI ENGINEERING & SHIPBUILDING CO., LTD.
    Inventors: Kazutoshi Murata, Yasunari Mori
  • Publication number: 20150130659
    Abstract: The planar antenna has a dielectric substrate; an antenna main body portion including first and second antenna elements on first and second sides, respectively, of the dielectric substrate and functioning as a balanced antenna; a signal line portion including first and second feed lines on the first and second sides, respectively, and a coplanar line on the first side and formed by a signal line and the first ground conductors, the signal line connected to the first feed line; a second ground conductor on the second side and connected to the second feed line; and via holes connecting the first ground conductors to the second ground conductor provided at ends of edges of the first ground conductors facing the end of the signal line where the signal line connects to the first feed line, to allow the first and second feed lines to function as balanced transmission lines.
    Type: Application
    Filed: November 6, 2014
    Publication date: May 14, 2015
    Inventors: Yasunari MORI, Kyouji DOI, Takayoshi YUMII, Yumi ASANO
  • Publication number: 20130008382
    Abstract: This thin-film forming device includes: a deposition vessel in which a reduced-pressure deposition space, to which a raw material gas and a reactant gas are alternately supplied on different timings, is formed in order to form a thin film on the substrate; and a gas supply unit configured to supply the raw material gas and the reactant gas to the deposition vessel. The gas supply unit is provided with at least one partition that bends a gas passage from an inlet port of each of the raw material gas and the reactant gas toward the deposition space.
    Type: Application
    Filed: March 17, 2011
    Publication date: January 10, 2013
    Applicant: MITSUI ENGINEERING & SHIPBUILDING CO., LTD.
    Inventors: Nozomu Hattori, Yasunari Mori
  • Patent number: 8098016
    Abstract: An impedance matching device is provided with a basic element having variable characteristic parameters for impedance matching, and an auxiliary element having variable characteristic parameters. At the time of generating plasma by using the impedance matching device, the characteristic parameters of the basic element of each antenna element are fixed, respectively, and the characteristic parameters of the auxiliary element are adjusted for each antenna element. Thus, in an adjusted status where impedance matching for each antenna element is adjusted, each antenna element of an antenna array is fed with a high frequency signal, an electromagnetic wave is radiated from the antenna element, the characteristic parameters of the basic element of each antenna element are synchronized and adjusted, and the impedances of the whole antenna array are matched.
    Type: Grant
    Filed: March 29, 2007
    Date of Patent: January 17, 2012
    Assignee: Mitsui Engineering & Shipbuilding Co., Ltd.
    Inventor: Yasunari Mori
  • Publication number: 20110305836
    Abstract: An atomic layer deposition apparatus, which forms a thin film on a substrate, includes a first container that defines a first inner space and includes a substrate carrying-in and carrying-out port and a gas introduction port in different positions, the substrate being carried in and out through the substrate carrying-in and carrying-out port, gas being introduced through the gas introduction port to form the thin film on the substrate, a second container that is provided in the first container to define a second inner space separated from the first inner space, the second container including a first opening, a first moving mechanism that moves the second container in a predetermined direction, and a controller that controls the first moving mechanism such that the second container is moved to a first position where the substrate carrying-in and carrying-out port and the first opening are located opposite each other when the substrate is carried in and out, the controller controlling the first moving mechanism
    Type: Application
    Filed: March 3, 2010
    Publication date: December 15, 2011
    Applicant: MITSUI ENGINEERING & SHIPBUILDING CO., LTD.
    Inventors: Kazutoshi Murata, Yasunari Mori
  • Publication number: 20110303147
    Abstract: An atomic layer deposition apparatus for forming a thin film on a substrate, including a first container that defines a first inner space, a second container provided inside the first container to define a second inner space, the second container being canister-shaped and including a first opening at one end thereof, a source gas that forms the thin film on the substrate flowing to the second inner space through the first opening, and a pressing member including a gas supply port for supplying the source gas to the second inner space through the first opening, the pressing member being configured to press the second container in a longitudinal direction of the second container so that the second inner space be separated from the first inner space.
    Type: Application
    Filed: February 15, 2010
    Publication date: December 15, 2011
    Applicant: MITSUI ENGINEERING & SHIPBUILDING CO., LTD.
    Inventors: Hiroyuki Tachibana, Kazutoshi Murata, Naomasa Miyatake, Yasunari Mori
  • Publication number: 20110293853
    Abstract: A thin film forming apparatus controls pressures of a first internal space in a deposition vessel and a second internal space provided in the first internal space according to determined pressure conditions, respectively. The apparatus causes a source gas to flow onto a substrate in the second internal space and supplies a high-frequency power to a plasma source provided in the first internal space according to the pressure conditions, thereby generating plasma in the second internal space to form a thin film on the substrate.
    Type: Application
    Filed: January 28, 2010
    Publication date: December 1, 2011
    Applicant: MITSUI ENGINEERING & SHIPBUILDING CO., LTD
    Inventors: Kazuki Takizawa, Yasunari Mori, Kazutoshi Murata
  • Publication number: 20100236917
    Abstract: An impedance matching device is provided with a basic element having variable characteristic parameters for impedance matching, and an auxiliary element having variable characteristic parameters. At the time of generating plasma by using the impedance matching device, the characteristic parameters of the basic element of each antenna element are fixed, respectively, and the characteristic parameters of the auxiliary element are adjusted for each antenna element. Thus, in an adjusted status where impedance matching for each antenna element is adjusted, each antenna element of an antenna array is fed with a high frequency signal, an electromagnetic wave is radiated from the antenna element, the characteristic parameters of the basic element of each antenna element are synchronized and adjusted, and the impedances of the whole antenna array are matched.
    Type: Application
    Filed: March 29, 2007
    Publication date: September 23, 2010
    Inventor: Yasunari Mori
  • Publication number: 20100095888
    Abstract: A plasma generating apparatus is provided with an impedance matching member, which is connected to a feeding line that supplies an antenna element with a high frequency signal, and has variable characteristic parameters for impedance matching; a distribution wire, which is arranged corresponding to the impedance matching member and connects the impedance matching member with at least two antenna elements; and a control section which changes at the same time impedance matching statuses of at least the two antenna elements connected to the impedance matching member through the distribution wire by changing the characteristic parameters of the impedance member. Thus, the number of impedance matching devices is smaller than that of the antenna elements, and a mechanism relating to impedance matching is made relatively small.
    Type: Application
    Filed: March 28, 2008
    Publication date: April 22, 2010
    Applicant: MITSUI ENGINEERING & SHIPBUILDING CO., LTD.
    Inventors: Yasunari Mori, Kazuki Takizawa