Abstract: A data processing method and a measurement device is provided in which an electromagnetic wave radiates toward an object to be measured and measurement data obtained by measuring reflected wave of the electromagnetic wave reflected from the object to be measured is processed. First processing data S(kx, ky, ?) is acquired by performing discrete Fourier transform (DFT) relating to an x-coordinate component and a y-coordinate component on measurement data s(x?, y?, ?). Then, an angular frequency ? is converted into a kz component after extending a range from which a ky component can vary, thereby calculating second processing data S?(kx, ky, kz). Then, the second processing data is subjected to inverse Fourier transform to calculate data f(x, y, z) of reflexibility of the object to be measured. In the extension of the ky component, local maximum value processing and a process of suppressing generation of an aliasing component using a ratio are performed.

Abstract: A layer-forming device includes a feeding mechanism that feeds a substrate during layer formation, an injector unit having a plurality of injectors that supplies a layer-forming gas to the substrate, along a feeding passage of the substrate, and a reactant supply unit which generates a reactant. The injector unit supplies the reactant through gaps between the injectors to a layer of the layer-forming component. A substrate opposing surface of the injector includes a layer-forming gas supply slot through which the layer-forming gas is output, first gas exhaust slots that suck an excess gas such as the layer-forming gas, the first gas exhaust slots being provided on both sides of the layer-forming gas supply slot in a feeding direction of the substrate, and inert gas supply slots that supply an inert gas provided on far sides of the respective first gas exhaust slots away from the layer-forming gas supply slot.

Abstract: A layer-forming device that enables highly efficient layer formation and has a simplified configuration includes: a substrate feeding mechanism; a plasma-generating electrode; a space-partitioning wall; and a plurality of injectors. The plasma-generating electrode faces towards a feeding pathway of the substrate, and generates plasma using a reactive gas upon a supply of electric power. The space-partitioning wall is disposed between the feeding pathway and the plasma-generating electrode. A plurality of slit-shaped through-holes, through which radicals, ions generated from the plasma, or a portion of the plasma can pass, are formed at predetermined intervals in the space-partitioning wall.

Abstract: A data processing method and a measurement device is provided in which an electromagnetic wave radiates toward an object to be measured and measurement data obtained by measuring reflected wave of the electromagnetic wave reflected from the object to be measured is processed. First processing data S(kx, ky, ?) is acquired by performing discrete Fourier transform (DFT) relating to an x-coordinate component and a y-coordinate component on measurement data s(x?, y?, ?). Then, an angular frequency ? is converted into a kz component after extending a range from which a ky component can vary, thereby calculating second processing data S?(kx, ky, kz). Then, the second processing data is subjected to inverse Fourier transform to calculate data f(x, y, z) of reflexibility of the object to be measured. In the extension of the ky component, local maximum value processing and a process of suppressing generation of an aliasing component using a ratio are performed.

Abstract: The planar antenna has a dielectric substrate; an antenna main body portion including first and second antenna elements on first and second sides, respectively, of the dielectric substrate and functioning as a balanced antenna; a signal line portion including first and second feed lines on the first and second sides, respectively, and a coplanar line on the first side and formed by a signal line and the first ground conductors, the signal line connected to the first feed line; a second ground conductor on the second side and connected to the second feed line; and via holes connecting the first ground conductors to the second ground conductor provided at ends of edges of the first ground conductors facing the end of the signal line where the signal line connects to the first feed line, to allow the first and second feed lines to function as balanced transmission lines.

Abstract: When a film is formed atomic layer by atomic layer with a use of a raw material gas and a reaction gas, a raw material gas is supplied into a film-forming space in which a substrate is placed to adsorb a component of the raw material gas onto the substrate. Then, a reaction gas is supplied into the film-forming space. Plasma is produced in the film-forming space using the reaction gas supplied so that part of a component of the raw material gas adsorbed on the substrate reacts with the reaction gas. At this moment, a duration of production of the plasma is set within a range of 0.5 millisecond to 100 milliseconds according to a degree of at least one property of a film to be formed, and a density of power input to the plasma source is in a range of 0.05 W/cm2 to 10 W/cm2.

Abstract: A layer-forming device includes a feeding mechanism that feeds a substrate during layer formation, an injector unit having a plurality of injectors that supplies a layer-forming gas to the substrate, along a feeding passage of the substrate, and a reactant supply unit which generates a reactant. The injector unit supplies the reactant through gaps between the injectors to a layer of the layer-forming component. A substrate opposing surface of the injector includes a layer-forming gas supply slot through which the layer-forming gas is output, first gas exhaust slots that suck an excess gas such as the layer-forming gas, the first gas exhaust slots being provided on both sides of the layer-forming gas supply slot in a feeding direction of the substrate, and inert gas supply slots that supply an inert gas provided on far sides of the respective first gas exhaust slots away from the layer-forming gas supply slot.

Abstract: A layer-forming device that enables highly efficient layer formation and has a simplified configuration includes: a substrate feeding mechanism; a plasma-generating electrode; a space-partitioning wall; and a plurality of injectors. The plasma-generating electrode faces towards a feeding pathway of the substrate, and generates plasma using a reactive gas upon a supply of electric power. The space-partitioning wall is disposed between the feeding pathway and the plasma-generating electrode. A plurality of slit-shaped through-holes, through which radicals, ions generated from the plasma, or a portion of the plasma can pass, are formed at predetermined intervals in the space-partitioning wall.

Abstract: An atomic layer deposition apparatus for forming a thin film on a substrate, including a first container that defines a first inner space, a second container provided inside the first container to define a second inner space, the second container being canister-shaped and including a first opening at one end thereof, a source gas that forms the thin film on the substrate flowing to the second inner space through the first opening, and a pressing member including a gas supply port for supplying the source gas to the second inner space through the first opening, the pressing member being configured to press the second container in a longitudinal direction of the second container so that the second inner space be separated from the first inner space.

Abstract: An atomic layer deposition apparatus, which forms a thin film on a substrate, includes a first container that defines a first inner space and includes a substrate carrying-in and carrying-out port and a gas introduction port in different positions, the substrate being carried in and out through the substrate carrying-in and carrying-out port, gas being introduced through the gas introduction port to form the thin film on the substrate, a second container that is provided in the first container to define a second inner space separated from the first inner space, the second container including a first opening, a first moving mechanism that moves the second container in a predetermined direction, and a controller that controls the first moving mechanism such that the second container is moved to a first position where the substrate carrying-in and carrying-out port and the first opening are located opposite each other when the substrate is carried in and out, the controller controlling the first moving mechanism

Abstract: The planar antenna has a dielectric substrate; an antenna main body portion including first and second antenna elements on first and second sides, respectively, of the dielectric substrate and functioning as a balanced antenna; a signal line portion including first and second feed lines on the first and second sides, respectively, and a coplanar line on the first side and formed by a signal line and the first ground conductors, the signal line connected to the first feed line; a second ground conductor on the second side and connected to the second feed line; and via holes connecting the first ground conductors to the second ground conductor provided at ends of edges of the first ground conductors facing the end of the signal line where the signal line connects to the first feed line, to allow the first and second feed lines to function as balanced transmission lines.

Abstract: This thin-film forming device includes: a deposition vessel in which a reduced-pressure deposition space, to which a raw material gas and a reactant gas are alternately supplied on different timings, is formed in order to form a thin film on the substrate; and a gas supply unit configured to supply the raw material gas and the reactant gas to the deposition vessel. The gas supply unit is provided with at least one partition that bends a gas passage from an inlet port of each of the raw material gas and the reactant gas toward the deposition space.

Abstract: An impedance matching device is provided with a basic element having variable characteristic parameters for impedance matching, and an auxiliary element having variable characteristic parameters. At the time of generating plasma by using the impedance matching device, the characteristic parameters of the basic element of each antenna element are fixed, respectively, and the characteristic parameters of the auxiliary element are adjusted for each antenna element. Thus, in an adjusted status where impedance matching for each antenna element is adjusted, each antenna element of an antenna array is fed with a high frequency signal, an electromagnetic wave is radiated from the antenna element, the characteristic parameters of the basic element of each antenna element are synchronized and adjusted, and the impedances of the whole antenna array are matched.

Abstract: An atomic layer deposition apparatus for forming a thin film on a substrate, including a first container that defines a first inner space, a second container provided inside the first container to define a second inner space, the second container being canister-shaped and including a first opening at one end thereof, a source gas that forms the thin film on the substrate flowing to the second inner space through the first opening, and a pressing member including a gas supply port for supplying the source gas to the second inner space through the first opening, the pressing member being configured to press the second container in a longitudinal direction of the second container so that the second inner space be separated from the first inner space.

Abstract: An atomic layer deposition apparatus, which forms a thin film on a substrate, includes a first container that defines a first inner space and includes a substrate carrying-in and carrying-out port and a gas introduction port in different positions, the substrate being carried in and out through the substrate carrying-in and carrying-out port, gas being introduced through the gas introduction port to form the thin film on the substrate, a second container that is provided in the first container to define a second inner space separated from the first inner space, the second container including a first opening, a first moving mechanism that moves the second container in a predetermined direction, and a controller that controls the first moving mechanism such that the second container is moved to a first position where the substrate carrying-in and carrying-out port and the first opening are located opposite each other when the substrate is carried in and out, the controller controlling the first moving mechanism

Abstract: A thin film forming apparatus controls pressures of a first internal space in a deposition vessel and a second internal space provided in the first internal space according to determined pressure conditions, respectively. The apparatus causes a source gas to flow onto a substrate in the second internal space and supplies a high-frequency power to a plasma source provided in the first internal space according to the pressure conditions, thereby generating plasma in the second internal space to form a thin film on the substrate.

Abstract: An impedance matching device is provided with a basic element having variable characteristic parameters for impedance matching, and an auxiliary element having variable characteristic parameters. At the time of generating plasma by using the impedance matching device, the characteristic parameters of the basic element of each antenna element are fixed, respectively, and the characteristic parameters of the auxiliary element are adjusted for each antenna element. Thus, in an adjusted status where impedance matching for each antenna element is adjusted, each antenna element of an antenna array is fed with a high frequency signal, an electromagnetic wave is radiated from the antenna element, the characteristic parameters of the basic element of each antenna element are synchronized and adjusted, and the impedances of the whole antenna array are matched.

Abstract: A plasma generating apparatus is provided with an impedance matching member, which is connected to a feeding line that supplies an antenna element with a high frequency signal, and has variable characteristic parameters for impedance matching; a distribution wire, which is arranged corresponding to the impedance matching member and connects the impedance matching member with at least two antenna elements; and a control section which changes at the same time impedance matching statuses of at least the two antenna elements connected to the impedance matching member through the distribution wire by changing the characteristic parameters of the impedance member. Thus, the number of impedance matching devices is smaller than that of the antenna elements, and a mechanism relating to impedance matching is made relatively small.