Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.

Abstract: The pixels of an organic EL display panel each include an anode electrode layer, an organic layer, and a cathode electrode layer. Each of the organic layer and the cathode electrode layer is shared by the plurality of pixels. An organic EL element in each of the pixels includes an anode section, a cathode section, and a light emitting section. A conductor layer having a recess is provided in a region outside a region of the organic EL element in a view from a light exiting direction in which the organic EL element emits light. The recess includes a coated section that is covered with the organic layer and a conductor exposed section where the conductor layer is exposed. The cathode electrode layer is connected to part of the conductor exposed section.

Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.

Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.

Abstract: Provided is an active matrix substrate that includes a substrate, a thin film transistor, an electrode layer, and a second insulating film. The thin film transistor is provided on the substrate and includes an oxide semiconductor layer, a gate electrode, and source and drain electrodes. The oxide semiconductor layer includes a first region as a channel region. The electrode layer is level with the gate electrode, is provided in a different region from the thin film transistor, and includes a first end. The second insulating film is provided between the substrate and the electrode layer and includes a second end at a more retreated position than the first end of the electrode layer. The oxide semiconductor layer further includes a second region having lower resistance than the first region. The electrode layer is electrically coupled, at the first end, to the second region of the oxide semiconductor layer.

Abstract: The pixels of an organic EL display panel each include an anode electrode layer, an organic layer, and a cathode electrode layer. Each of the organic layer and the cathode electrode layer is shared by the plurality of pixels. An organic EL element in each of the pixels includes an anode section, a cathode section, and a light emitting section. A conductor layer having a recess is provided in a region outside a region of the organic EL element in a view from a light exiting direction in which the organic EL element emits light. The recess includes a coated section that is covered with the organic layer and a conductor exposed section where the conductor layer is exposed. The cathode electrode layer is connected to part of the conductor exposed section.

Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate including a pixel area and a peripheral circuit area around the pixel area, a first insulating layer which is provided on the insulating substrate and includes at least nitrogen, a second insulating layer at least provided on the first insulating layer of the peripheral circuit area, a first thin-film transistor which is provided above the first insulating layer of the pixel area and includes a first oxide semiconductor layer, and a second thin-film transistor which is provided on the second insulating layer of the peripheral circuit area and includes a second oxide semiconductor layer. The second insulating layer in the pixel area is thinner than that in the peripheral circuit area.

Abstract: Provided is an active matrix substrate that includes a substrate, a thin film transistor, an electrode layer, and a second insulating film. The thin film transistor is provided on the substrate and includes an oxide semiconductor layer, a gate electrode, and source and drain electrodes. The oxide semiconductor layer includes a first region as a channel region. The electrode layer is level with the gate electrode, is provided in a different region from the thin film transistor, and includes a first end. The second insulating film is provided between the substrate and the electrode layer and includes a second end at a more retreated position than the first end of the electrode layer. The oxide semiconductor layer further includes a second region having lower resistance than the first region. The electrode layer is electrically coupled, at the first end, to the second region of the oxide semiconductor layer.

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate including a pixel area and a peripheral circuit area around the pixel area, a first insulating layer which is provided on the insulating substrate and includes at least nitrogen, a second insulating layer at least provided on the first insulating layer of the peripheral circuit area, a first thin-film transistor which is provided above the first insulating layer of the pixel area and includes a first oxide semiconductor layer, and a second thin-film transistor which is provided on the second insulating layer of the peripheral circuit area and includes a second oxide semiconductor layer. The second insulating layer in the pixel area is thinner than that in the peripheral circuit area.

Abstract: A display device includes light emitting elements that are arranged in a two-dimensional matrix, in which the light emitting elements include a drive circuit which is provided on a substrate, a first insulating layer which covers the drive circuit and the substrate, a light emitting portion in which a first electrode, an organic layer having a light emitting layer, and a second electrode are laminated, and a second insulating layer which covers the first electrode.

Abstract: A display device includes light emitting elements that are arranged in a two-dimensional matrix, in which the light emitting elements include a drive circuit which is provided on a substrate, a first insulating layer which covers the drive circuit and the substrate, a light emitting portion in which a first electrode, an organic layer having a light emitting layer, and a second electrode are laminated, and a second insulating layer which covers the first electrode.

Abstract: A display device includes light emitting elements that are arranged in a two-dimensional matrix, in which the light emitting elements include a drive circuit which is provided on a substrate, a first insulating layer which covers the drive circuit and the substrate, a light emitting portion in which a first electrode, an organic layer having a light emitting layer, and a second electrode are laminated, and a second insulating layer which covers the first electrode.

Abstract: There are provided a thin-film transistor suppressing influence of light and having stable characteristics, and a method of manufacturing the thin-film transistor, as well as a display unit and an electronic apparatus. The thin-film transistor includes: a gate electrode; an oxide semiconductor film having a channel region that faces the gate electrode; and a protective film covering at least the channel region and containing an aluminum lower oxide (AlXOY, where 0<Y/X<3/2) that absorbs light.

Abstract: A display device having a plurality of driving elements and wiring parts electrically connected to the driving parts, the display device includes: a plurality of first electrodes which are formed in correspondence to each driving element on the driving elements and the wiring parts; a plurality of light-emitting parts which are each formed on the first electrodes; a common second electrode which is formed from a material that transmits light from the light-emitting part and is formed on the light-emitting parts; auxiliary wiring parts with a lower resistance than the second electrodes; and contact parts which are formed in laminate structure from a plurality of conductive layers and which electrically connect the second electrodes and the auxiliary wirings with each other, with at least the lowermost conductive layer of the conductive layers of the contact parts being in direct contact with the second electrode.

Abstract: A display device includes light emitting elements that are arranged in a two-dimensional matrix, in which the light emitting elements include a drive circuit which is provided on a substrate, a first insulating layer which covers the drive circuit and the substrate, a light emitting portion in which a first electrode, an organic layer having a light emitting layer, and a second electrode are laminated, and a second insulating layer which covers the first electrode.

Abstract: A display device capable of improving the view angle characteristics without deteriorating the outside light contrast and a display unit using it are provided. The display device includes a first electrode, an organic layer including a light emitting layer and a second electrode sequentially over a substrate, and having a resonator structure in which light generated in the light emitting layer is resonated between a first end and a second end. An end face of the first electrode on the light emitting layer side is the first end having a step shape. A distance adjustment layer that fills in the step shape and has a flat surface on the second electrode side is provided between the first electrode and the second electrode, and thereby the second end is planarized, and an optical distance between the first end and the second end is varied according to the step shape.

Abstract: A display device capable of improving the view angle characteristics without deteriorating the outside light contrast and a display unit using it are provided. The display device includes a first electrode, an organic layer including a light emitting lay and a second electrode sequentially over a substrate, and having a resonator structure in which light generated in the light emitting layer is resonated between a first end and a second end. An end face of the first electrode on the light emitting layer side is the first end having a step shape. A distance adjustment layer that fills in the step shape and has a flat surface on the second electrode side is provided between the first electrode and the second electrode, and thereby the second end is planarized, and an optical distance between the first end and the second end is varied according to the step shape.

Abstract: Disclosed herein is a display device including a semiconductor layer, a gate electrode, a source/drain electrode layer, and an organic electric field light-emitting element. The semiconductor layer is provided on a substrate and made of an oxide semiconductor. The gate electrode is provided above a selective first region of the semiconductor layer with a gate insulating film sandwiched therebetween. The source/drain electrode layer is adapted to serve as a source or drain and electrically connected to a second region of the semiconductor layer adjacent to the first region thereof. Also, the organic electric field light-emitting element is provided above a third region of the semiconductor layer different from the first and second region thereof, the organic electric field light-emitting element having a region for the third region that is driven as a pixel electrode.

Abstract: Disclosed herein is an electronic device including, an active matrix region, a short-circuit line, electrostatic protection elements, and a light-shielding film.