Patents by Inventor Yasunobu TORII
Yasunobu TORII has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230314504Abstract: A probe position monitoring structure includes a first common line and a contact portion configured for being directly contacted with a probe. The contact portion includes a first zigzag structure, and a first end of the first zigzag structure is directly connected with the first common line. A method of monitoring a position of a probe includes the following steps. The probe position monitoring structure is provided. The first zigzag structure is directly contacted with a first probe. A resistance measurement is performed to measure a resistance of a portion of the first zigzag structure located between the first probe and the first end for monitoring a position of the first probe.Type: ApplicationFiled: June 5, 2023Publication date: October 5, 2023Applicant: United Semiconductor Japan Co., Ltd.Inventor: Yasunobu Torii
-
Patent number: 11714123Abstract: A probe position monitoring structure includes a first common line and a contact portion configured for being directly contacted with a probe. The contact portion includes a first zigzag structure, and a first end of the first zigzag structure is directly connected with the first common line. A method of monitoring a position of a probe includes the following steps. The probe position monitoring structure is provided. The first zigzag structure is directly contacted with a first probe. A resistance measurement is performed to measure a resistance of a portion of the first zigzag structure located between the first probe and the first end for monitoring a position of the first probe.Type: GrantFiled: September 2, 2020Date of Patent: August 1, 2023Assignee: United Semiconductor Japan Co., Ltd.Inventor: Yasunobu Torii
-
Publication number: 20220065925Abstract: A probe position monitoring structure includes a first common line and a contact portion configured for being directly contacted with a probe. The contact portion includes a first zigzag structure, and a first end of the first zigzag structure is directly connected with the first common line. A method of monitoring a position of a probe includes the following steps. The probe position monitoring structure is provided. The first zigzag structure is directly contacted with a first probe. A resistance measurement is performed to measure a resistance of a portion of the first zigzag structure located between the first probe and the first end for monitoring a position of the first probe.Type: ApplicationFiled: September 2, 2020Publication date: March 3, 2022Inventor: Yasunobu Torii
-
Patent number: 10192866Abstract: A manufacturing method of a semiconductor device according to a disclosed embodiment includes: implanting a first impurity into a first region of a semiconductor substrate, forming a semiconductor layer on the semiconductor substrate, forming a trench in the semiconductor layer and the semiconductor substrate, forming an isolation insulating film in the trench, implanting a second impurity into a second region of the semiconductor layer, forming a first gate insulating film and a first gate electrode in the first region, forming a second gate insulating film and a second gate electrode in the second region, forming a first source region and a first drain region at both sides of the first gate electrode, and forming a second source region and a second drain region at both sides of the second gate electrode.Type: GrantFiled: May 25, 2017Date of Patent: January 29, 2019Assignee: FUJITSU SEMICONDUCTOR LIMITEDInventors: Kazushi Fujita, Taiji Ema, Mitsuaki Hori, Yasunobu Torii
-
Publication number: 20170263606Abstract: A manufacturing method of a semiconductor device according to a disclosed embodiment includes: implanting a first impurity into a first region of a semiconductor substrate, forming a semiconductor layer on the semiconductor substrate, forming a trench in the semiconductor layer and the semiconductor substrate, forming an isolation insulating film in the trench, implanting a second impurity into a second region of the semiconductor layer, forming a first gate insulating film and a first gate electrode in the first region, forming a second gate insulating film and a second gate electrode in the second region, forming a first source region and a first drain region at both sides of the first gate electrode, and forming a second source region and a second drain region at both sides of the second gate electrode.Type: ApplicationFiled: May 25, 2017Publication date: September 14, 2017Applicant: FUJITSU SEMICONDUCTOR LIMITEDInventors: Kazushi Fujita, Taiji Ema, Mitsuaki Hori, Yasunobu Torii
-
Patent number: 9691767Abstract: A manufacturing method of a semiconductor device according to a disclosed embodiment includes: implanting a first impurity into a first region of a semiconductor substrate, forming a semiconductor layer on the semiconductor substrate, forming a trench in the semiconductor layer and the semiconductor substrate, forming an isolation insulating film in the trench, implanting a second impurity into a second region of the semiconductor layer, forming a first gate insulating film and a first gate electrode in the first region, forming a second gate insulating film and a second gate electrode in the second region, forming a first source region and a first drain region at both sides of the first gate electrode, and forming a second source region and a second drain region at both sides of the second gate electrode.Type: GrantFiled: August 20, 2015Date of Patent: June 27, 2017Assignee: FUJITSU SEMICONDUCTOR LIMITEDInventors: Kazushi Fujita, Taiji Ema, Mitsuaki Hori, Yasunobu Torii
-
Publication number: 20170062283Abstract: There are included: forming element isolation regions in a semiconductor substrate; introducing a first impurity of a first conductivity type, to thereby form a first well and a second well of the first conductivity type; introducing a second impurity of a second conductivity type, to thereby form a third well of the second conductivity type and introducing the second impurity into a region between the first well and the second well, to thereby form a separation well of the second conductivity type; and further introducing a third impurity of the second conductivity type into the region between the first well and the second well.Type: ApplicationFiled: November 11, 2016Publication date: March 2, 2017Applicant: FUJITSU SEMICONDUCTOR LIMITEDInventor: Yasunobu Torii
-
Patent number: 9524899Abstract: There are included: forming element isolation regions in a semiconductor substrate; introducing a first impurity of a first conductivity type, to thereby form a first well and a second well of the first conductivity type; introducing a second impurity of a second conductivity type, to thereby form a third well of the second conductivity type and introducing the second impurity into a region between the first well and the second well, to thereby form a separation well of the second conductivity type; and further introducing a third impurity of the second conductivity type into the region between the first well and the second well.Type: GrantFiled: March 28, 2014Date of Patent: December 20, 2016Assignee: FUJITSU SEMICONDUCTOR LIMITEDInventor: Yasunobu Torii
-
Publication number: 20160218103Abstract: It is therefore an object of the present invention to provide a method in which, in a semiconductor integrated circuit device, a plurality of transistors having wide-rangingly different Ioff levels are embedded together in a semiconductor device including transistors each using a non-doped channel. By controlling an effective channel length, a leakage current is controlled without changing an impurity concentration distribution in a transistor including a non-doped channel layer and a screen layer provided immediately under the non-doped channel layer.Type: ApplicationFiled: April 6, 2016Publication date: July 28, 2016Inventors: Taiji Ema, Kazushi Fujita, Yasunobu Torii, Mitsuaki Hori
-
Publication number: 20150357330Abstract: A manufacturing method of a semiconductor device according to a disclosed embodiment includes: implanting a first impurity into a first region of a semiconductor substrate, forming a semiconductor layer on the semiconductor substrate, forming a trench in the semiconductor layer and the semiconductor substrate, forming an isolation insulating film in the trench, implanting a second impurity into a second region of the semiconductor layer, forming a first gate insulating film and a first gate electrode in the first region, forming a second gate insulating film and a second gate electrode in the second region, forming a first source region and a first drain region at both sides of the first gate electrode, and forming a second source region and a second drain region at both sides of the second gate electrode.Type: ApplicationFiled: August 20, 2015Publication date: December 10, 2015Inventors: Kazushi Fujita, Taiji Ema, Mitsuaki Hori, Yasunobu Torii
-
Patent number: 9147744Abstract: A manufacturing method of a semiconductor device according to a disclosed embodiment includes: implanting a first impurity into a first region of a semiconductor substrate, forming a semiconductor layer on the semiconductor substrate, forming a trench in the semiconductor layer and the semiconductor substrate, forming an isolation insulating film in the trench, implanting a second impurity into a second region of the semiconductor layer, forming a first gate insulating film and a first gate electrode in the first region, forming a second gate insulating film and a second gate electrode in the second region, forming a first source region and a first drain region at both sides of the first gate electrode, and forming a second source region and a second drain region at both sides of the second gate electrode.Type: GrantFiled: July 3, 2013Date of Patent: September 29, 2015Assignee: FUJITSU SEMICONDUCTOR LIMITEDInventors: Kazushi Fujita, Taiji Ema, Mitsuaki Hori, Yasunobu Torii
-
Publication number: 20140306319Abstract: There are included: forming element isolation regions in a semiconductor substrate; introducing a first impurity of a first conductivity type, to thereby form a first well, and a second well of the first conductivity type; introducing a second impurity of a second conductivity type, to thereby form a third well of the second conductivity type and introducing the second impurity into a region between the first well and the second well, to thereby form a separation well of the second conductivity type; and further introducing a third impurity of the second conductivity type into the region between the first well and the second well.Type: ApplicationFiled: March 28, 2014Publication date: October 16, 2014Applicant: FUJITSU SEMICONDUCTOR LIMITEDInventor: Yasunobu Torii
-
Patent number: 8778752Abstract: A method for designing a semiconductor device includes arranging at least a pattern of a first active region in which a first transistor is formed and a pattern of a second active region in which a second transistor is formed; arranging at least a pattern of a gate wire which intersects the first active region and the second active region; extracting at least a first region in which the first active region and the gate wire are overlapped with each other; arranging at least one pattern of a compressive stress film on a region including the first active region; and obtaining by a computer a layout pattern of the semiconductor device, when the at least one pattern of the compressive stress film is arranged, end portions of the at least one pattern thereof are positioned based on positions of end portions of the first region.Type: GrantFiled: November 3, 2010Date of Patent: July 15, 2014Assignee: Fujitu Semiconductor LimitedInventor: Yasunobu Torii
-
Patent number: 8778786Abstract: Silicon loss prevention in a substrate during transistor device element manufacture is achieved by limiting a number of photoresist mask and chemical oxide layer stripping opportunities during the fabrication process. This can be achieved through the use of a protective layer that remains on the substrate during formation and stripping of photoresist masks used in identifying the implant areas into the substrate. In addition, undesirable reworking steps due to photoresist mask misalignment are eliminated or otherwise have no effect on consuming silicon from the substrate during fabrication of device elements. In this manner, device elements with the same operating characteristics and performance can be consistently made from lot to lot.Type: GrantFiled: May 29, 2012Date of Patent: July 15, 2014Assignee: SuVolta, Inc.Inventors: Lance Scudder, Pushkar Ranade, Dalong Zhao, Teymur Bakhishev, Urupattur C. Sridharan, Taiji Ema, Toshifumi Mori, Mitsuaki Hori, Junji Oh, Kazushi Fujita, Yasunobu Torii
-
Patent number: 8723237Abstract: A method for designing a semiconductor device includes arranging at least a pattern of a first active region in which a first transistor is formed and a pattern of a second active region in which a second transistor is formed; arranging at least a pattern of a gate wire which intersects the first active region and the second active region; extracting at least a first region in which the first active region and the gate wire are overlapped with each other; arranging at least one pattern of a compressive stress film on a region including the first active region; and obtaining by a computer a layout pattern of the semiconductor device, when the at least one pattern of the compressive stress film is arranged, end portions of the at least one pattern thereof are positioned based on positions of end portions of the first region.Type: GrantFiled: January 4, 2013Date of Patent: May 13, 2014Assignee: Fujitsu Semiconductor LimitedInventor: Yasunobu Torii
-
Publication number: 20140091397Abstract: It is therefore an object of the present invention to provide a method in which, in a semiconductor integrated circuit device, a plurality of transistors having wide-rangingly different Ioff levels are embedded together in a semiconductor device including transistors each using a non-doped channel. By controlling an effective channel length, a leakage current is controlled without changing an impurity concentration distribution in a transistor including a non-doped channel layer and a screen layer provided immediately under the non-doped channel layer.Type: ApplicationFiled: September 30, 2013Publication date: April 3, 2014Applicant: FUJITSU SEMICONDUCTOR LIMITEDInventors: Taiji Ema, Kazushi Fujita, Yasunobu Torii, Mitsuaki Hori
-
Publication number: 20140035046Abstract: A manufacturing method of a semiconductor device according to a disclosed embodiment includes: implanting a first impurity into a first region of a semiconductor substrate, forming a semiconductor layer on the semiconductor substrate, forming a trench in the semiconductor layer and the semiconductor substrate, forming an isolation insulating film in the trench, implanting a second impurity into a second region of the semiconductor layer, forming a first gate insulating film and a first gate electrode in the first region, forming a second gate insulating film and a second gate electrode in the second region, forming a first source region and a first drain region at both sides of the first gate electrode, and forming a second source region and a second drain region at both sides of the second gate electrode.Type: ApplicationFiled: July 3, 2013Publication date: February 6, 2014Inventors: Kazushi FUJITA, Taiji EMA, Mitsuaki HORI, Yasunobu TORII
-
Publication number: 20110101462Abstract: A method for designing a semiconductor device includes arranging at least a pattern of a first active region in which a first transistor is formed and a pattern of a second active region in which a second transistor is formed; arranging at least a pattern of a gate wire which intersects the first active region and the second active region; extracting at least a first region in which the first active region and the gate wire are overlapped with each other; arranging at least one pattern of a compressive stress film on a region including the first active region; and obtaining by a computer a layout pattern of the semiconductor device, when the at least one pattern of the compressive stress film is arranged, end portions of the at least one pattern thereof are positioned based on positions of end portions of the first region.Type: ApplicationFiled: November 3, 2010Publication date: May 5, 2011Applicant: c/o FUJITSU SEMICONDUCTOR LIMITEDInventor: Yasunobu TORII