Abstract: A semiconductor integrated circuit which is capable of being manufactured with a higher packing density and a small-size structure of standard cells is described. In the semiconductor integrated circuit, substrate regions and source regions are shared by adjacent standard cells as well as common contact regions which are located inward displaced respectively from the centers of the substrate regions.

Abstract: A semiconductor integrated circuit which is capable of being manufactured with a higher packing density and a small-size structure of standard cells is described. In the semiconductor integrated circuit, substrate regions and source regions are shared by adjacent standard cells as well as common contact regions which are located inward displaced respectively from the centers of the substrate regions.

Abstract: A semiconductor integrated circuit which is capable of being manufactured with a higher packing density and a small-size structure of standard cells is described. In the semiconductor integrated circuit, substrate regions and source regions are shared by adjacent standard cells as well as common contact regions which are located inward displaced respectively from the centers of the substrate regions.

Abstract: A semiconductor integrated circuit which is capable of being manufactured with a higher packing density and a small-size structure of standard cells is described. In the semiconductor integrated circuit, substrate regions and source regions are shared by adjacent standard cells as well as common contact regions which are located inward displaced respectively from the centers of the substrate regions.

Abstract: A master slice layout technology is provided to improve integration density of a semiconductor integrated circuit such as ASIC. In particular, a plurality of gate basic cells are arranged on a semiconductor chip and then a wiring channel grid having non-uniform pitches is defined on the gate basic cells. If a layout of metal wirings is designed along the wiring channel grid, miniaturizable patterns can be set to smaller values while maintaining line widths of predetermined metal wirings such as power supply wirings at preselected values. Since flexibility for the layout of the metal wiring layers is large, miniaturization of the patterns can be attained even if design rules for basic cell process and wiring process are different.

Abstract: First I/O signal pads are arranged along the periphery of a semiconductor chip except corner sections thereof at a first pitch, and second I/O signal pads and power supply pads are arranged in the corner sections of the semiconductor chip. In this case, the second I/O signal pads and the power supply pads are alternately arranged at the first pitch, and arrangement of the power supply pads are set so that the pads are located at fixed sites common to semiconductor chips. With this arrangement, the second I/O signal pads are arranged at a pitch wider than the first pitch.

Abstract: An operation speed measuring circuit measures a difference in propagation delay time between first and second path 2, 3 including logic gates connected in series and thus confirms that an element provided on a chip obtains a specified operation speed. This operation speed measuring circuit is so constructed as to be controllable by an input signal IN from one input terminal 1 and can be therefore disposed in such an area that the number of placeable terminals is restricted down to a small number. When this operation speed measuring circuit is provided with a power supply terminal independent of other circuits, constructions of other circuits can be independently designed. When the operation speed measuring circuit is disposed in the area independent of an intra-chip integrated circuit design area, a degree of freedom of designing other circuits is improved.

Abstract: A semiconductor integrated circuit with a buffer circuit is disclosed. The source of the first P(N)MOS transistor is connected to a voltage supply (ground), its drain being connected to an output terminal. The source of the first N(P)MOS transistor is connected to the ground (voltage supply), its drain being connected to the output terminal. The gate of the second P(N)MOS transistor is connected to the gate of the first NMOS transistor, its source being connected to the voltage supply (ground) and its drain being connected to the output terminal. The gate of the second N(P)MOS transistor is connected to the gate of the first PMOS transistor, at least one of its source and drain being floated. A controller responses to an enable signal and an input signal to apply control signals to the gates of the first PMOS and NMOS transistors. By these control signals, any one of the first PMOS and NMOS transistors is turned on based on the input signal level when the enable signal is on.