Abstract: Provided is a sample observation apparatus including a charged particle optical column that, irradiates a sample including an observation target portion that is a concave portion with a charged particle beam at an acceleration voltage, an image generation section that acquires an image including the observation target portion from a signal acquired with irradiation of the charged particle beam, a storage section that stores information representing a relationship between a brightness ratio of a concave portion and its neighboring portion of a reference sample that is irradiated with the charged particle beam at the acceleration voltage and a value that represents a structure of the concave portions of the reference sample in advance, a calculation section that acquires a brightness ratio of the concave portion and its neighboring portion of the image, and a determination section that determines whether or not a defect occurs in the observation target portion based on the information that represents the relati

Abstract: A memory access processing method includes storing, in a cache memory, a plurality of pages stored in a main memory; storing the plurality of pages in a buffer memory, each of the plurality of pages being associated with an identifier indicating whether the each of the plurality of pages being a zero page to be zero-cleared; allocating a page to be set to a zero page, when a page fault occurs during execution of an access to the cache memory and execution of a process is stopped; updating an identifier corresponding to the allocated page to an identifier indicating the allocated page being the zero page; resuming the execution of the process; controlling an access to the cache memory, based on the identifier for each of the plurality of pages; and executing initialization of a page corresponding to the allocated page and is included in the main memory.

Abstract: When a scanning electron microscope is used to measure a superposition error between upper-layer and lower-layer patterns, an SN of the lower-layer pattern may often be lower, so that when simple frame adding processing is used, the adding processing needs to be performed many times. Further, in an image obtained through such simple adding processing, contrast may not be optimal for both the upper-layer and lower-layer patterns.

Abstract: According to one embodiment, an end-of-life detection unit in an X-ray diagnostic apparatus is configured to detect an end of life of a detector on the basis of an output value in an X-ray image, and includes: a luminance-level-value computation unit configured to calculate an amount of X-ray irradiation of the detector on the basis of the output value in an area of interest which is set on any one of the X-ray image and the detector; an irradiation-amount accumulation unit configured to calculate an accumulated amount of irradiation in the area of interest by adding the amount of X-ray irradiation calculated by the luminance-level-value computation unit to a previous amount of X-ray irradiation in the area of interest; and an end-of-life judgment unit configured to make a judgment on the end of life of the detector on the basis of the accumulated amount of irradiation.

Abstract: An X-ray diagnostic system is provided that is capable of fitting the vertical position of the X-ray tube to each mode of photography without being affected by the height of the ceiling. The X-rays irradiated from the X-ray tube and transmitted through the subject are detected, and photographed images are captured based on the detected X-rays; the system comprises a supporting member, an arm member, and a height adjuster; the supporting member is provided on the ceiling of a room, formed in a pillar shape, and configured in such a way that the entire length is vertically extended and shortened. The arm member has a base end section connected to the lower end portion of the supporting member and a tip section on which the X-ray tube is mounted. The height adjuster adjusts the vertical position of the X-ray tube by moving the tip section of the arm member relative to the supporting member.

Abstract: According to one embodiment, an end-of-life detection unit in an X-ray diagnostic apparatus is configured to detect an end of life of a detector on the basis of an output value in an X-ray image, and includes: a luminance-level-value computation unit configured to calculate an amount of X-ray irradiation of the detector on the basis of the output value in an area of interest which is set on any one of the X-ray image and the detector; an irradiation-amount accumulation unit configured to calculate an accumulated amount of irradiation in the area of interest by adding the amount of X-ray irradiation calculated by the luminance-level-value computation unit to a previous amount of X-ray irradiation in the area of interest; and an end-of-life judgment unit configured to make a judgment on the end of life of the detector on the basis of the accumulated amount of irradiation.

Abstract: An X-ray imaging apparatus according to one embodiment of the present invention includes: an arm unit holding an X-ray tube unit that generates an X-ray and an X-ray detection unit that detects the X-ray generated by the X-ray tube unit; a column unit rotatably supporting the arm unit; a holding unit holding the column unit at a floor surface; an inclining unit inclining the column unit with the holding unit as a rotation center axis thereof; and a controller performing control, when the column unit is inclined by the inclining unit, to horizontally move the X-ray tube unit and X-ray detection unit while maintaining the relative distance and relative angle therebetween.

Abstract: When the electrode potential of a charge control electrode above a wafer is reduced, image brightness is reduced. A point of change in the image brightness is a switching point between a positively charged state of the image and a negatively charged state of the image, showing the weakly charged state of the image. By setting this point of change as an inspecting condition, the amount of electric charges on the surface of the wafer can be reduced, and stable wafer inspection can be performed. It is estimated that an applied voltage V1 in FIG. 14 corresponds to the point of the change and is roughly included in the voltage range of a region enclosed by a broken line in the vicinity of the applied voltage V1. Within this voltage range, the influence of charge on an inspection under the inspecting condition can be reduced.

Abstract: Methods of manufacturing printed circuit board assemblies include placing a semiconductor chip having a plurality of lead terminals on a board formed with a plurality of solder lands at its surface such that each of the plurality of lead terminals is in touch with a corresponding one of the solder lands; supplying a solder material on the plurality of lead terminal s and the plurality of solder lands; supplying a flux including mono salt of adipic acid and alkyl secondary amine; and locally heating the plurality of lead terminals such that the solder material and the flux are melted to join together the lead terminals and the solder lands.

Abstract: When the electrode potential of a charge control electrode above a wafer is reduced, image brightness is reduced. A point of change in the image brightness is a switching point between a positively charged state of the image and a negatively charged state of the image, showing the weakly charged state of the image. By setting this point of change as an inspecting condition, the amount of electric charges on the surface of the wafer can be reduced, and stable wafer inspection can be performed. It is estimated that an applied voltage V1 in FIG. 14 corresponds to the point of the change and is roughly included in the voltage range of a region enclosed by a broken line in the vicinity of the applied voltage V1. Within this voltage range, the influence of charge on an inspection under the inspecting condition can be reduced.

Abstract: A plasma treatment apparatus which introduces electromagnetic waves from a dielectric window into a chamber evacuated to low pressure has a standing wave controlling part provided near the periphery part of the dielectric window with the portions other than the entrance thereof being surrounded by conductor, and having shape and size thereof equivalent to depth d=l/4+l/2×(n−1)±l/8: (n=positive integer, l=c(light velocity)/f/{square root over (&egr;)}) in terms of the characteristic length.

Abstract: A plasma treatment apparatus which introduces electromagnetic waves from a dielectric window into a chamber evacuated to low pressure has a standing wave controlling part provided near the periphery part of the dielectric window with the portions other than the entrance thereof being surrounded by conductor, and having shape and size thereof equivalent to depth d=l/4+l/2×(n−1)±l/8: (n=positive integer, l=c(light velocity)/f/{square root}{square root over (&egr;)}) in terms of the characteristic length.

Abstract: An X-ray tube and an X-ray detector are supported by an arm in such a manner that a distance between the X-ray tube and an image reception plane of the X-ray detector can be changed. A grid is arranged on the image reception plane of the X-ray detector. The arm is supported by an arm support apparatus in such a manner that an angle of the arm can be changed. Moire image data files obtained by the grid are stored in a storage device in association with the distance between the X-ray tube and the image reception plane of the X-ray detector and the angle of the arm. Image data outputted from the X-ray detector is corrected by the moire correction circuit based on the moire image data selectively read from the storage device in accordance with the distance and the angle.

Abstract: An X-ray tube and an X-ray detector are supported by an arm in such a manner that a distance between the X-ray tube and an image reception plane of the X-ray detector can be changed. A grid is arranged on the image reception plane of the X-ray detector. The arm is supported by an arm support apparatus in such a manner that an angle of the arm can be changed. Moire image data files obtained by the grid are stored in a storage device in association with the distance between the X-ray tube and the image reception plane of the X-ray detector and the angle of the arm. Image data outputted from the X-ray detector is corrected by the moire correction circuit based on the moire image data selectively read from the storage device in accordance with the distance and the angle.

Abstract: To provide a stable and continuous plasma generation characteristic while maintaining uniformity of large diameter with a wide range of gas seeds, pressure and density so as to provide a plasma treatment apparatus with a wide application range and with high production efficiency, and a method of producing semiconductor device using it. The plasma treatment apparatus which introduces electromagnetic waves from a dielectric window into a chamber evacuated to low pressure has a part of controlling standing wave provided in the the periphery part of the dielectric window with the portions other than the entrance thereof being surrounded by conductor, having quality of material to fill up therein being made appropriate, and having shape and size thereof equivalent to depth d=l/4+l/2×(n−l)±l/8: (n=positive integer, l=c(light velocity)/f/{square root}{square root over (∈)}) in terms of the characteristic length.

Abstract: The present invention relates to alkylenediamine derivatives which relieve urinating contraction and therefore are of value as active ingredients of therapeutic agents for treating dysuria.