Abstract: A substrate cleaning method includes: providing a substrate including a low-k layer containing silicon to a substrate support; etching the low-k layer by a plasma generated from a first gas; separating the etched substrate from the substrate support; and removing a reaction product attached to the substrate in the etching by a plasma generated from a second gas. The second gas includes a first carbon-containing gas represented by CxHyFz (y?0, x/z>¼).

Abstract: An etching method includes etching a first silicon-containing film of a substrate by plasma of a first processing gas; and etching a second silicon-containing film of the substrate by plasma of a second processing gas. The etching of the first silicon-containing film and the etching of the second silicon-containing film are repeated a preset number of times.

Abstract: An etching method includes etching a first silicon-containing film of a substrate by plasma of a first processing gas; and etching a second silicon-containing film of the substrate by plasma of a second processing gas. The etching of the first silicon-containing film and the etching of the second silicon-containing film are repeated a preset number of times.

Abstract: A focus ring assembly configured to be coupled to a substrate holder comprises a focus ring and a secondary focus ring coupled to the focus ring, wherein the secondary focus ring is configured to reduce the deposition of process residue on a backside surface of the substrate.

Abstract: A method is provided for plasma ashing to remove photoresist remnants and etch residues formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving a hydrogen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluorocarbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. A chamber pressure less than 20 mTorr is utilized in the second cleaning step. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.

Abstract: A focus ring assembly configured to be coupled to a substrate holder comprises a focus ring and a secondary focus ring coupled to the focus ring, wherein the secondary focus ring is configured to reduce the deposition of process residue on a backside surface of the substrate.

Abstract: A method is provided for plasma ashing to remove photoresist remnants and etch residues formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving a hydrogen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluorocarbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. A chamber pressure less than 20 mTorr is utilized in the second cleaning step. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.

Abstract: A method is provided for plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an hydrogen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluoro-carbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.

Abstract: A method is provided for plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an hydrogen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluoro-carbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.