Abstract: A semiconductor device includes: a silicon substrate with semiconductor elements; an isolation trench formed in the silicon substrate for isolating active regions in the silicon substrate, the isolation trench having a trapezoidal cross sectional shape having a width gradually narrowing with a depth from the surface of the silicon substrate; a first liner insulating film formed on the surface of the trench and made of a silicon oxide film or a silicon oxynitride film having a thickness of 1 to 5 nm; a second liner insulating film formed on the first liner insulating film and made of a silicon nitride film having a thickness of 2 to 8 nm; and an isolation region burying the trench defined by the second liner insulating film.

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a well of the first conductivity type formed in the semiconductor substrate, a transistor formed in the well, a diffusion region of a second conductivity type formed in the semiconductor substrate so as to cover a lateral side and a bottom edge of the well, a terminal formed on the semiconductor substrate at an outside part of the diffusion region, and a conductive region contacting with the well, the well being in ohmic contact with the terminal via the conductive region and the semiconductor substrate, the conductive region having an impurity concentration level exceeding an impurity concentration level of the semiconductor substrate.

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a well of the first conductivity type formed in the semiconductor substrate, a transistor formed in the well, a diffusion region of a second conductivity type formed in the semiconductor substrate so as to cover a lateral side and a bottom edge of the well, a terminal formed on the semiconductor substrate at an outside part of the diffusion region, and a conductive region contacting with the well, the well being in ohmic contact with the terminal via the conductive region and the semiconductor substrate, the conductive region having an impurity concentration level exceeding an impurity concentration level of the semiconductor substrate.

Abstract: A semiconductor device includes: a silicon substrate with semiconductor elements; an isolation trench formed in the silicon substrate for isolating active regions in the silicon substrate, the isolation trench having a trapezoidal cross sectional shape having a width gradually narrowing with a depth from the surface of the silicon substrate; a first liner insulating film formed on the surface of the trench and made of a silicon oxide film or a silicon oxynitride film having a thickness of 1 to 5 nm; a second liner insulating film formed on the first liner insulating film and made of a silicon nitride film having a thickness of 2 to 8 nm; and an isolation region burying the trench defined by the second liner insulating film.

Abstract: A semiconductor device comprises a first transistor 38a having a first gate electrode 22; a second transistor 38b having a second gate electrode 34 which is different from the first gate electrode; an insulation film 28 formed between the first gate electrode and the second gate electrode; and an interconnection electrode 44 buried in a concavity 42 formed in the first gate electrode, the second gate electrode and the insulation film and electrically interconnecting the first gate electrode and the second gate electrode. The interconnection electrode is buried in the concavity formed in the first gate electrode, the second gate electrode and the insulation film, and the interconnection electrodes electrically interconnects the first gate electrode and the second gate electrode, whereby the semiconductor device can have high integration and can be reliable.

Abstract: A semiconductor device comprises a first transistor 38a having a first gate electrode 22; a second transistor 38b having a second gate electrode 34 which is different from the first gate electrode; an insulation film 28 formed between the first gate electrode and the second gate electrode; and an interconnection electrode 44 buried in a concavity 42 formed in the first gate electrode, the second gate electrode and the insulation film and electrically interconnecting the first gate electrode and the second gate electrode. The interconnection electrode is buried in the concavity formed in the first gate electrode, the second gate electrode and the insulation film, and the interconnection electrodes electrically interconnects the first gate electrode and the second gate electrode, whereby the semiconductor device can have high integration and can be reliable.

Abstract: A semiconductor device comprises a first transistor 38a having a first gate electrode 22; a second transistor 38b having a second gate electrode 34 which is different from the first gate electrode; an insulation film 28 formed between the first gate electrode and the second gate electrode; and an interconnection electrode 44 buried in a concavity 42 formed in the first gate electrode, the second gate electrode and the insulation film and electrically interconnecting the first gate electrode and the second gate electrode. The interconnection electrode is buried in the concavity formed in the first gate electrode, the second gate electrode and the insulation film, and the interconnection electrodes electrically interconnects the first gate electrode and the second gate electrode, whereby the semiconductor device can have high integration and can be reliable.

Abstract: After a hard mask layer including an amorphous silicon layer is formed above a silicon substrate, etching is performed by using a mask to form a trench defining active regions in the silicon substrate. The amorphous silicon layer is selectively etched to retract side walls of the amorphous silicon layer, the exposed surfaces of the silicon substrate and amorphous silicon layer are oxidized or oxynitridized to form insulating films, and the inside of the trench is filled with a deposited silicon oxide layer. The unnecessary portion of the deposited silicon oxide layer is removed by chemical mechanical polishing. Thereafter, the amorphous silicon layer 30 is selectively etched. At this time, the insulating film formed on the side walls of the amorphous silicon layer is left above edge areas of the active region.

Abstract: A semiconductor device includes: a silicon substrate with semiconductor elements; an isolation trench formed in the silicon substrate for isolating active regions in the silicon substrate, the isolation trench having a trapezoidal cross sectional shape having a width gradually narrowing with a depth from the surface of the silicon substrate; a first liner insulating film formed on the surface of the trench and made of a silicon oxide film or a silicon oxynitride film having a thickness of 1 to 5 nm; a second liner insulating film formed on the first liner insulating film and made of a silicon nitride film having a thickness of 2 to 8 nm; and an isolation region burying the trench defined by the second liner insulating film.

Abstract: A semiconductor device comprises a first transistor 38a having a first gate electrode 22; a second transistor 38b having a second gate electrode 34 which is different from the first gate electrode; an insulation film 28 formed between the first gate electrode and the second gate electrode; and an interconnection electrode 44 buried in a concavity 42 formed in the first gate electrode, the second gate electrode and the insulation film and electrically interconnecting the first gate electrode and the second gate electrode. The interconnection electrode is buried in the concavity formed in the first gate electrode, the second gate electrode and the insulation film, and the interconnection electrodes electrically interconnects the first gate electrode and the second gate electrode, whereby the semiconductor device can have high integration and can be reliable.

Abstract: An automatic filtration dewatering system includes a cover to which a filtration raw liquid supply pipe and a pressure air supply pipe are connected. A plate having a filter medium support and a filtrate exhaust pipe is selectively closed by a cover with a pneumatic cylinder vertically moving said cover. Filter medium moving rollers are provided on both sides of the cover and plate, and a sheet-like long filter medium is stretched over said rollers for movement a predetermined distance per one step of filtration.

Abstract: Disclosed herein is a batch type filter system including a cover provided with a supply pipe for supplying raw liquid and air, a plate having a filter medium support on an upper surface thereof and a filtrate exhaust pipe, said cover being vertically separable from said plate, a plurality of filter medium moving rollers provided on both sides of said cover and said plate, and a sheet-like long filter medium stretched over said rollers and adapted to be moved by a predetermined length per one batch of filtration, said filter medium being temporarily fixedly held between the circumferential portion of said cover and the curcumferential portion of said plate. The improvement in the batch type filter system comprises arcuately curved tension bars provided at such positions where a moving direction of the filter medium is changed and on downstream sides of said filter medium moving rollers, so as to apply a larger tensile force to a central portion of said filter medium than to both edge portions thereof.