Abstract: Provided is a vapor deposition method in which a deposition rate can be kept constant, it is not needed to unnecessarily increase a container temperature for improving a deposition rate, and vapor deposition of even a powder material that is easily thermally decomposed can be performed at a desired deposition rate, in vacuum vapor deposition using a powder material. The method is provided by using a container including an accommodating portion configured to accommodate the powder material and at least one opening for releasing vapor of the powder material from the accommodating portion, to perform the vacuum vapor deposition of the powder material by heating the container, in which, in a case where an area of an inner surface of the accommodating portion is S and a total area of the opening is O, a ratio of the total area O of the opening to the area S of the inner surface is 0.06% to 2% as a percentage of O/S.

Abstract: The fluid controller (1) having a projecting joint (4) at the side surfaces and an operation driving part arranged at the top surface of the block shaped body (2) is heated using a heating device (11) incorporating the heaters (14) (15) and including a pair of holding members (12) (13) for sandwiching the fluid controller (1) to be heated from both sides. The body (2) is heated from both side surfaces while controlling the temperature of a bottom surface of the body (2) of the fluid controller (1).

Abstract: A body 2 comprises a center channel block 11 and side channel blocks 12, 13. Each of shut-off valves 5, 6 is removably mounted on both the center channel block and one of the side channel blocks. The center channel block has Y-shaped channels 22 identical in number with the number of the subgas inlets 23 and each comprising one common channel 22a and two branched channels 22b, 22c. The common channel 22a of the Y-shaped channel 22 has an opening serving as the subgas inlet 23 and the branched channels 22b, 22c of the Y-shaped channel 22 communicate with the inlet ports of the corresponding pair of shut-off valves 5, 6 to thereby provide the subgas inflow channels. The main gas channel 18 and the main channel communication passageways 19 are formed in one of the side channel blocks 12, and the vent gas channel 20 and the vent channel communication passageways 21 are formed on the other side channel block 13.

Abstract: A dielectric film 4 made of a high dielectric material with a relative permittivity of 8 or more is laid between a field plate section 9 and a channel layer 2. Tantalum oxide (Ta2O5), for example, may be used as the high dielectric material.

Abstract: A field effect transistor includes a semiconductor substrate with a channel layer being formed on its surface, a source electrode and a drain electrode formed at a distance on said semiconductor substrate, and a gate electrode placed between the source electrode and the drain electrode and making a Schottky junction with the channel layer. The gate electrode is provided with an overhanging field plate section and between the field plate section and the channel layer, there is laid a dielectric film. When the relative permittivity and the film thickness of the dielectric film are denoted by ∈ and t (nm), respectively, the following condition is satisfied 5≦∈<8, and 100<t<350.

Abstract: A field control electrode 9 is formed over an insulating film 6 on a channel layer 2, between a gate electrode 5 and a drain electrode 8. Tantalum oxide (Ta.sub.2 O.sub.5), for example, may be used as the material for the insulating film 6.

Abstract: Disclosed is a method of growing 4 gallium nitride-based crystal by vapor phase epitaxy, suitable for mass production, without the necessity of thermal processing after completion of the crystal growth. The temperature of the substrate crystal immediately after completion of the crystal growth is 700.degree. C. or higher, and cooling of the substrate crystal at 700.degree. C. or lower after completion of the crystal growth is performed in an atmosphere of a hydrogen-fee carrier gas.