Abstract: A light emitting module includes a substrate, a light reflective resin layer, wiring electrodes and a light emitting element. The light reflective resin layer is arranged on the substrate. The wiring electrodes are arranged over the substrate with the light reflective resin layer being interposed between the substrate and the wiring electrodes. The light emitting element has an electrode formation surface including a positive and negative pair of element electrodes, and a light emitting surface on a side opposite to the electrode formation surface. The light emitting element is arranged on top surfaces of the wiring electrodes with the element electrodes facing the top surfaces of the wiring electrodes.

Abstract: A caliper type device is provided for identifying the cranial midline on a patient. The device includes a pair of arms have first ends for receipt in a patients ears, and opposite, pivotally connected second ends which allow the arms to open and close to fit to different sized heads of various patients. A housing at the second end of the arms holds a laser pointer or other tool for identifying the cranial midline after the device is positioned on the patients head.

Abstract: A light emitting module includes a substrate, a light reflective resin layer, wiring electrodes and a light emitting element. The light reflective resin layer is arranged on the substrate. The wiring electrodes are arranged over the substrate with the light reflective resin layer being interposed between the substrate and the wiring electrodes. The light emitting element has an electrode formation surface including a positive and negative pair of element electrodes, and a light emitting surface on a side opposite to the electrode formation surface. The light emitting element is arranged on top surfaces of the wiring electrodes with the element electrodes facing the top surfaces of the wiring electrodes.

Abstract: A method of manufacturing a light emitting module including a substrate; a light emitting element having an electrode formation surface comprising a positive and negative pair of element electrodes, and a light emitting surface on the side opposite to the electrode formation surface; a wiring electrode connected to the element electrode; and a light reflective resin layer, the method of manufacturing a light emitting module including: placing the light emitting element on a support member, in a state with the electrode formation surface facing upward, and the light emitting surface facing downward; forming a coating layer on the support member, surrounding the light emitting element; forming the wiring electrode extending from the element electrode over the coating layer; forming the light reflective resin layer on the wiring electrode and the coating layer; joining the substrate on top of the light reflective resin layer; removing the support member; and removing the coating layer.

Abstract: A method of manufacturing a light emitting module including a substrate; a light emitting element having an electrode formation surface comprising a positive and negative pair of element electrodes, and a light emitting surface on the side opposite to the electrode formation surface; a wiring electrode connected to the element electrode; and a light reflective resin layer, the method of manufacturing a light emitting module including: placing the light emitting element, on a support member, in a state with the electrode formation surface facing upward, and the light emitting surface facing downward; forming a coating layer on the support member, surrounding the light emitting element; forming the wiring electrode extending from the element electrode over the coating layer; forming the light reflective resin layer on the wiring electrode and the coating layer; joining the substrate on top of the light reflective resin layer; removing the support member; and removing the coating layer.

Abstract: A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element. The projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top. The side surfaces have an inclination angle of between 53° and 59° from a bottom of the projections. The side surfaces are crystal-growth-suppressed surfaces on which a growth of the nitride semiconductor is suppressed relative to a portion of the principal surface located between adjacent projections. A bottom of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides, and each of the side surfaces has a substantially triangular shape having vertexes located at the top of the projection and at both ends of a respective side of the bottom of the projection.

Abstract: A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element. The projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top. The side surfaces have an inclination angle of between 53° and 59° from a bottom of the projections. The side surfaces are crystal-growth-suppressed surfaces on which a growth of the nitride semiconductor is suppressed relative to a portion of the principal surface located between adjacent projections. A bottom of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides, and each of the side surfaces has a substantially triangular shape having vertexes located at the top of the projection and at both ends of a respective side of the bottom of the projection.

Abstract: A method for manufacturing a sapphire substrate in which a plurality of projections are formed on a C-plane of the sapphire substrate by etching, includes: forming a patterned etching mask on the C-plane of the sapphire substrate; etching the sapphire substrate until the projections are formed, wherein each of the projections formed by the etching has a substantially triangular pyramidal-shape and has a plurality of side surfaces, a pointed top and a bottom, wherein the bottom of each of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides. The projections are arranged on vertexes of a triangular lattice, and an orientation of the bottom of the projections conforms with an orientation that is rotated by about 30 degrees from an orientation of a triangle of the triangular lattice; and removing the etching mask from the sapphire substrate.

Abstract: [Technical Problem] A sapphire substrate and a method for manufacturing the same are provided, which enables growth of a nitride semiconductor having excellent crystallinity and can achieve a nitride semiconductor light emitting element having excellent light extraction efficiency. [Solution to Problem] A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element, wherein the projection is substantially pyramidal-shaped having a pointed top and constituted by a plurality of side surfaces, wherein the side surface has an inclined angle of between 53° and 59° from a bottom surface of the projection, and wherein the side surface is crystal-growth-suppressed surface on which growth of nitride semiconductor is suppressed relative to the substrate surface located between the adjacent projections.

Abstract: A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element. The projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top. The side surfaces have an inclination angle of between 53° and 59° from a bottom of the projections. The side surfaces are crystal-growth suppressed surfaces on which a growth of the nitride semiconductor is suppressed relative to a portion of the principal surface located between adjacent projections. A bottom of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides, and each of the side surfaces has a substantially triangular shape having vertexes located at the top of the projection and at both ends of a respective side of the bottom of the projection.

Abstract: [Technical Problem] A sapphire substrate and a method for manufacturing the same are provided, which enables growth of a nitride semiconductor having excellent crystallinity and can achieve a nitride semiconductor light emitting element having excellent light extraction efficiency. [Solution to Problem] A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element, wherein the projection is substantially pyramidal-shaped having a pointed top and constituted by a plurality of side surfaces, wherein the side surface has an inclined angle of between 53° and 59° from a bottom surface of the projection, and wherein the side surface is crystal-growth-suppressed surface on which growth of nitride semiconductor is suppressed relative to the substrate surface located between the adjacent projections.