Abstract: A microwave plasma processing device includes a fixing device for fixing a substrate as a processing target on a central axis in a plasma processing chamber, a exhausting device for depressurizing an inside and outside of the substrate, a metal processing gas supply member which is present in the substrate and forms a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to perform processing. A microwave sealing member is provided at a substrate-holding portion of the fixing device, and a connection position of the microwave introducing device is located at a node of an electric field intensity distribution formed on the processing gas supply member by introducing the microwave.

Abstract: [PROBLEMS] To provide a heating electrode which can uniformly heat a material to be heated having an irregular shape and can stably perform heating/holding-convey of the material to be heated by the heating electrode; and a method for heating food by using the heating electrode. [MEANS FOR SOLVING PROBLEMS] An assembly of pin electrodes (10) formed by conductive pins are slidably arranged in a through hole (21) of a pin support table (20). A pressure-variable gas chamber (30) whose pressure is variable is connected to the pin support table (20). By applying a plus pressure or a minus pressure to the gas chamber (30), the pin electrodes (10) are displaced relatively to the pin support table (20).

Abstract: [PROBLEMS] To provide a heating electrode which can uniformly heat a material to be heated having an irregular shape and can stably perform heating/holding-convey of the material to be heated by the heating electrode; and a method for heating food by using the heating electrode. [MEANS FOR SOLVING PROBLEMS] An assembly of pin electrodes (10) formed by conductive pins are slidably arranged in a through hole (21) of a pin support table (20). A pressure-variable gas chamber (30) whose pressure is variable is connected to the pin support table (20). By applying a plus pressure or a minus pressure to the gas chamber (30), the pin electrodes (10) are displaced relatively to the pin support table (20).

Abstract: A microwave plasma processing device includes a fixing device for fixing a substrate as a processing target on a central axis in a plasma processing chamber, a exhausting device for depressurizing an inside and outside of the substrate, a metal processing gas supply member which is present in the substrate and forms a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to perform processing. A microwave sealing member is provided at a substrate-holding portion of the fixing device, and a connection position of the microwave introducing device is located at a node of an electric field intensity distribution formed on the processing gas supply member by introducing the microwave.

Abstract: A microwave plasma processing device can form a uniform thin film on a substrate to be processed. The microwave plasma processing device includes a fixing device for fixing a substrate to be processed onto the center axis in a plasma processing chamber, an exhaust device for depressurizing the inside and outside of the substrate, a metal processing gas supply member present in the substrate and forming a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to process it. A microwave sealing member is provided in a specified position of the substrate-holding portion of the fixing device, and the connection position of the microwave introducing device is set to a specified weak-field position out of a field intensity distribution formed in the interior of the plasma processing chamber.

Abstract: A microwave plasma processing device and a gas supply member capable of forming a uniform thin film on a substrate to be processed. The microwave plasma processing device comprises fixing means of fixing a substrate to be processed onto the center axis in a plasma processing chamber, exhaust means of depressurizing the inside and outside of the substrate, a metal processing gas supply member present in the substrate and forming a reentrant cylindrical resonating system along with the plasma processing chamber, and microwave introducing means of introducing a microwave into the plasma processing chamber to process it, wherein a microwave sealing member is provided in a specified position of the substrate-holding portion of the fixing means, and the connection position of the microwave introducing means is set to a specified weak-field position out of a field intensity distribution formed in the interior of the plasma processing chamber.