Patents by Inventor Yasunori Sogoh
Yasunori Sogoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9450003Abstract: A solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.Type: GrantFiled: January 30, 2015Date of Patent: September 20, 2016Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yusuke Oike, Takahiro Kawamura, Shinya Yamakawa, Ikuhiro Yamamura, Takashi Machida, Yasunori Sogoh, Naoki Saka
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Patent number: 9419045Abstract: A solid-state imaging device including, a first semiconductor region of the first conduction type, a photoelectric conversion part having a second semiconductor region of the second conduction type formed in the region separated by the isolation dielectric region of the first semiconductor region, pixel transistors formed in the first semiconductor region, a floating diffusion region of the second conduction type which is formed in the region separated by the isolation dielectric region of the first semiconductor region, and an electrode formed on the first semiconductor region existing between the floating diffusion region and the isolation dielectric region and is given a prescribed bias voltage.Type: GrantFiled: October 9, 2015Date of Patent: August 16, 2016Assignee: SONY CORPORATIONInventors: Yasunori Sogoh, Hiroyuki Ohri
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Publication number: 20160035781Abstract: A solid-state imaging device including, a first semiconductor region of the first conduction type, a photoelectric conversion part having a second semiconductor region of the second conduction type formed in the region separated by the isolation dielectric region of the first semiconductor region, pixel transistors formed in the first semiconductor region, a floating diffusion region of the second conduction type which is formed in the region separated by the isolation dielectric region of the first semiconductor region, and an electrode formed on the first semiconductor region existing between the floating diffusion region and the isolation dielectric region and is given a prescribed bias voltage.Type: ApplicationFiled: October 9, 2015Publication date: February 4, 2016Inventors: Yasunori Sogoh, Hiroyuki Ohri
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Patent number: 9177980Abstract: Disclosed herein is a solid-state imaging device including, a first semiconductor region of the first conduction type, a photoelectric conversion part having a second semiconductor region of the second conduction type formed in the region separated by the isolation dielectric region of the first semiconductor region, pixel transistors formed in the first semiconductor region, a floating diffusion region of the second conduction type which is formed in the region separated by the isolation dielectric region of the first semiconductor region, and an electrode formed on the first semiconductor region existing between the floating diffusion region and the isolation dielectric region and is given a prescribed bias voltage.Type: GrantFiled: December 29, 2014Date of Patent: November 3, 2015Assignee: SONY CORPORATIONInventors: Yasunori Sogoh, Hiroyuki Ohri
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Publication number: 20150137188Abstract: A solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.Type: ApplicationFiled: January 30, 2015Publication date: May 21, 2015Inventors: Yusuke Oike, Takahiro Kawamura, Shinya Yamakawa, Ikuhiro Yamamura, Takashi Machida, Yasunori Sogoh, Naoki Saka
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Patent number: 9024361Abstract: Provided is a solid-state imaging device including: a photodiode which converts an optical signal to signal charges; a transfer gate which transfers the signal charges from the photodiode; an impurity diffusion layer to which the signal charges are transferred by the transfer gate; and a MOS transistor of which a gate is connected to the impurity diffusion layer. The impurity diffusion layer has a first conduction type semiconductor layer and a second conduction type semiconductor layer which is formed in the first conduction type semiconductor layer and under an end portion of the transfer gate.Type: GrantFiled: July 19, 2010Date of Patent: May 5, 2015Assignee: Sony CorporationInventors: Hiroyuki Ohri, Yasunori Sogoh
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Publication number: 20150115336Abstract: Disclosed herein is a solid-state imaging device including, a first semiconductor region of the first conduction type, a photoelectric conversion part having a second semiconductor region of the second conduction type formed in the region separated by the isolation dielectric region of the first semiconductor region, pixel transistors formed in the first semiconductor region, a floating diffusion region of the second conduction type which is formed in the region separated by the isolation dielectric region of the first semiconductor region, and an electrode formed on the first semiconductor region existing between the floating diffusion region and the isolation dielectric region and is given a prescribed bias voltage.Type: ApplicationFiled: December 29, 2014Publication date: April 30, 2015Inventors: Yasunori Sogoh, Hiroyuki Ohri
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Patent number: 8952432Abstract: Disclosed herein is a solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.Type: GrantFiled: March 17, 2011Date of Patent: February 10, 2015Assignee: Sony CorporationInventors: Yusuke Oike, Takahiro Kawamura, Shinya Yamakawa, Ikuhiro Yamamura, Takashi Machida, Yasunori Sogoh, Naoki Saka
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Patent number: 8947573Abstract: Disclosed herein is a solid-state imaging device including, a first semiconductor region of the first conduction type, a photoelectric conversion part having a second semiconductor region of the second conduction type formed in the region separated by the isolation dielectric region of the first semiconductor region, pixel transistors formed in the first semiconductor region, a floating diffusion region of the second conduction type which is formed in the region separated by the isolation dielectric region of the first semiconductor region, and an electrode formed on the first semiconductor region existing between the floating diffusion region and the isolation dielectric region and is given a prescribed bias voltage.Type: GrantFiled: March 24, 2011Date of Patent: February 3, 2015Assignee: Sony CorporationInventors: Yasunori Sogoh, Hiroyuki Ohri
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Patent number: 8629484Abstract: Disclosed herein is a solid-state imaging device including: a semiconductor region of a second conductivity type which is formed on a face side of a semiconductor substrate; a photoelectric conversion element which has an impurity region of a first conductivity type and which is operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof; an electric-charge holding region which has an impurity region of the first conductivity type and in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out; an intermediate transfer path through which only the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined electric charge amount is transferred into the electric-charge holding region; and an impurity layer.Type: GrantFiled: March 22, 2011Date of Patent: January 14, 2014Assignee: Sony CorporationInventors: Hiroyuki Ohri, Takashi Machida, Takahiro Kawamura, Yasunori Sogoh
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Publication number: 20110242390Abstract: Disclosed herein is a solid-state imaging device including, a first semiconductor region of the first conduction type, a photoelectric conversion part having a second semiconductor region of the second conduction type formed in the region separated by the isolation dielectric region of the first semiconductor region, pixel transistors formed in the first semiconductor region, a floating diffusion region of the second conduction type which is formed in the region separated by the isolation dielectric region of the first semiconductor region, and an electrode formed on the first semiconductor region existing between the floating diffusion region and the isolation dielectric region and is given a prescribed bias voltage.Type: ApplicationFiled: March 24, 2011Publication date: October 6, 2011Applicant: SONY CORPORATIONInventors: Yasunori Sogoh, Hiroyuki Ohri
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Publication number: 20110241079Abstract: Disclosed herein is a solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.Type: ApplicationFiled: March 17, 2011Publication date: October 6, 2011Applicant: SONY CORPORATIONInventors: Yusuke Oike, Takahiro Kawamura, Shinya Yamakawa, Ikuhiro Yamamura, Takashi Machida, Yasunori Sogoh, Naoki Saka
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Publication number: 20110241089Abstract: Disclosed herein is a solid-state imaging device including: a semiconductor region of a second conductivity type which is formed on a face side of a semiconductor substrate; a photoelectric conversion element which has an impurity region of a first conductivity type and which is operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof; an electric-charge holding region which has an impurity region of the first conductivity type and in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out; an intermediate transfer path through which only the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined electric charge amount is transferred into the electric-charge holding region; and an impurity layer.Type: ApplicationFiled: March 22, 2011Publication date: October 6, 2011Applicant: SONY CORPORATIONInventors: Hiroyuki Ohri, Takashi Machida, Takahiro Kawamura, Yasunori Sogoh
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Publication number: 20110018037Abstract: Provided is a solid-state imaging device including: a photodiode which converts an optical signal to signal charges; a transfer gate which transfers the signal charges from the photodiode; an impurity diffusion layer to which the signal charges are transferred by the transfer gate; and a MOS transistor of which a gate is connected to the impurity diffusion layer. The impurity diffusion layer has a first conduction type semiconductor layer and a second conduction type semiconductor layer which is formed in the first conduction type semiconductor layer and under an end portion of the transfer gate.Type: ApplicationFiled: July 19, 2010Publication date: January 27, 2011Applicant: SONY CORPORATIONInventors: Hiroyuki Ohri, Yasunori Sogoh
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Publication number: 20080176399Abstract: A metallic silicide forms method of forming a metallic silicide layer on a semiconductor region containing silicon. The method includes the steps of: forming a first metal layer containing a first metal on the semiconductor region; forming a second metal layer containing a second metal on the semiconductor region to cover the first metal layer formed in the step of forming a first metal layer; and siliciding the semiconductor region with at least one of the first metal layer and the second metal layer by performing a heat treatment for the semiconductor region in which the second metal layer is formed to cover the first metal layer in the step of forming a second metal layer, forming the metallic silicide layer. The first metal layer is formed at a first temperature to be silicided. The second metal layer is formed at a second temperature lower than the first temperature.Type: ApplicationFiled: February 6, 2007Publication date: July 24, 2008Inventors: Takahiro Katagiri, Yasunori Sogoh