Patents by Inventor Yasunori Tabira

Yasunori Tabira has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240133075
    Abstract: A layered body includes: a substrate; and an oxide portion positioned on the substrate. An oxide that constitutes the oxide portion contains at least two or more rare-earth elements: silicon; and oxygen. The oxide that is contained in the oxide portion exhibits a diffraction peak derived from a (004) plane at a position of 2?=51.9°±0.9° in an X-ray diffraction pattern, and has an apatite crystal structure. The ratio of linear expansion coefficient of the oxide that constitutes the oxide portion in an a-axis direction relative to linear expansion coefficient of the substrate is 0.15 or more and 1.45 or less.
    Type: Application
    Filed: February 17, 2022
    Publication date: April 25, 2024
    Inventors: Sakiko YABU, Tokiharu OYAMA, Haruki MATSUO, Kentaro SOMA, Yasunori TABIRA, Shingo IDE
  • Publication number: 20230074796
    Abstract: An active material is provided for use in a solid-state battery. The active material exhibits at least one peak in the range of 0.145 to 0.185 nm and at least one peak in the range of 0.280 to 0.310 nm in a radial distribution function obtained through measurement of an X-ray absorption fine structure thereof. In the particle size distribution, by volume, of the active material obtained through a particle size distribution measurement by laser diffraction scattering method, the ratio of the absolute value of the difference between the mode diameter of the active material and the D10 of the active material (referred to as the “mode diameter” and the “D10” respectively) to the mode diameter in percentage terms, (|mode diameter - D10 / mode diameter) x 100, satisfies 0% < (( | mode diameter - D10| / mode diameter) x 100) ? 58.0%.
    Type: Application
    Filed: November 16, 2022
    Publication date: March 9, 2023
    Inventors: Jun OMURA, Daisuke WASHIDA, Tetsuya MITSUMOTO, Hitohiko IDE, Yasuo KOMODA, Yasuhiro SHIBATA, Yasunori TABIRA, Tomoyuki MAEDA
  • Publication number: 20220149354
    Abstract: An active material is provided for use in a solid-state battery. The active material exhibits at least one peak in the range of 0.145 to 0.185 nm and at least one peak in the range of 0.280 to 0.310 nm in a radial distribution function obtained through measurement of an X-ray absorption fine structure thereof. In the particle size distribution, by volume, of the active material obtained through a particle size distribution measurement by laser diffraction scattering method, the ratio of the absolute value of the difference between the mode diameter of the active material and the D10 of the active material (referred to as the “mode diameter” and the “D10” respectively) to the mode diameter in percentage terms, (|mode diameter?D10|/mode diameter)×100, satisfies 0%<((|mode diameter?D10|/mode diameter)×100)?58.0%.
    Type: Application
    Filed: February 26, 2020
    Publication date: May 12, 2022
    Inventors: Jun OMURA, Daisuke WASHIDA, Tetsuya MITSUMOTO, Hitohiko IDE, Yasuo KOMODA, Yasuhiro SHIBATA, Yasunori TABIRA, Tomoyuki MAEDA
  • Publication number: 20210234158
    Abstract: Disclosed is an active material that can reduce an interface resistance with a sulfide solid electrolyte and improve the battery performance. The active material exhibits at least one peak in the range of from 0.145 nm to 0.185 nm and at least one peak in the range of from 0.28 nm to 0.31 nm in a radial distribution function obtained through measurement of an X-ray absorption fine structure of the active material. The active material is for use in a solid-state battery. The active material preferably has a core particle, and a coating layer located on the surface of the core particle.
    Type: Application
    Filed: September 27, 2019
    Publication date: July 29, 2021
    Inventors: Daisuke WASHIDA, Hitohiko IDE, Tetsuya MITSUMOTO, Jun OMURA, Yasuo KOMODA, Yasuhiro SHIBATA, Yasunori TABIRA, Tomoyuki MAEDA
  • Publication number: 20190193056
    Abstract: An improved methane oxidation catalyst including tin oxide-supported platinum exerts superior methane oxidation activity at lower temperatures. The methane oxidation catalyst for oxidizing methane in exhaust gas includes platinum supported on tin oxide, and satisfies formula (1): y?0.27 x, where x is a platinum content (wt %) relative to tin oxide, and y is a ratio of a peak intensity of (111)-faceted platinum relative to a peak intensity of (111)-faceted tin oxide (Pt(111)/SnO2(111)), in a diffraction pattern (2?=37 to 41°) obtained by measurement with an X-ray diffractometer (XRD).
    Type: Application
    Filed: June 16, 2017
    Publication date: June 27, 2019
    Inventors: Katsuhiko HAYASHI, Kazuyuki ABE, Yunosuke NAKAHARA, Yasunori TABIRA, Tomoko NAKANO, Kazuhiro KANAZAWA, Yasushiro GOMI
  • Publication number: 20170317348
    Abstract: A negative electrode active material for nonaqueous secondary batteries is disclosed. The active material contains a silicon solid solution having one or more than one of a group 3 semimetal or metal element, a group 4 semimetal or metal element except silicon, and a group 5 nonmetal or semimetal element incorporated in silicon as a solute element. The solute element is present more on the crystal grain boundaries of the silicon solid solution than inside the grains.
    Type: Application
    Filed: July 20, 2017
    Publication date: November 2, 2017
    Inventors: Hitohiko IDE, Daisuke INOUE, Shinya KAGEI, Natsumi SHIBAMURA, Yasunori TABIRA
  • Patent number: 9761873
    Abstract: A negative electrode active material for nonaqueous secondary batteries is disclosed. The active material contains a silicon solid solution having one or more than one of a group 3 semimetal or metal element, a group 4 semimetal or metal element except silicon, and a group 5 nonmetal or semimetal element incorporated in silicon as a solute element. The solute element is present more on the crystal grain boundaries of the silicon solid solution than inside the grains.
    Type: Grant
    Filed: June 25, 2012
    Date of Patent: September 12, 2017
    Assignee: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Hitohiko Ide, Daisuke Inoue, Shinya Kagei, Natsumi Shibamura, Yasunori Tabira
  • Patent number: 9666896
    Abstract: To provide a positive electrode for nonaqueous secondary batteries having improved charge/discharge cycle characteristics, the positive electrode contains in its active material layer a compound represented by formula: LizNi1-x-yTix(MpLiq)yO2 wherein x is a positive number less than 0.3; y is a positive number less than 0.25; z is a number from 0.95 to 1.05; M is a polyvalent metal satisfying the relation: prM+qrL=54 to 69 pm (where rM is the ionic radius of M, and rL is the ionic radius of Li+); p is a positive number; q is 0 or greater; p and q satisfy the relations: p+q=1 and pv+q=3; and v is the valence of the metal M. When analyzed by XRD, the compound shows diffraction peaks assigned to the planes (003) and (104). The ratio of the area of the peak of the (003) plane to that of the (104) plane is 0.5 to 0.75.
    Type: Grant
    Filed: November 25, 2010
    Date of Patent: May 30, 2017
    Assignee: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Yanko Marinov Todorov, Yasunori Tabira
  • Patent number: 9391148
    Abstract: A single crystal SiC substrate capable of forming a good epitaxial thin film thereon to give a high-quality epitaxial substrate is provided. The single crystal SiC substrate has a CMP-treated surface and has 5 or fewer lattice defects measuring 30 nm or more in a direction parallel to the polished surface and 50 nm or more in a direction perpendicular to the polished surface as counted within a depth of 100 nm from the polished surface in a direction perpendicular to the polished surface and a length of 10 ?m in a direction parallel to the polished surface when observed in cross-section using a transmission electron microscope under the 00L reflection or the h-h0 reflection, where L and h are each an integer other than 0.
    Type: Grant
    Filed: April 12, 2013
    Date of Patent: July 12, 2016
    Assignee: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Atsushi Koike, Yasunori Tabira, Ryuichi Sato
  • Patent number: 9334580
    Abstract: A manganese oxide particle having a hexagonal crystal structure or an analogous hexagonal crystal structure with an a-axis length of 8.73±1 ? and a c-axis length of 14.86±1 ?. The manganese oxide particle is preferably produced by a process including mixing an aqueous solution containing manganese (II) and an organic compound having a hydroxyl group while in a heated state with an alkali.
    Type: Grant
    Filed: July 8, 2011
    Date of Patent: May 10, 2016
    Assignee: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Mami Yoshida, Kenji Suzuoka, Kazuhiko Kato, Yasunori Tabira, Isamu Yashima
  • Patent number: 9269472
    Abstract: Fluorine-doped tin oxide particles having a structure characterized by peaks at at least 123±5 cm?1, 139±5 cm?1, and 170±5 cm?1 in Raman spectroscopy. The particles preferably have additional Raman spectral peaks at 78±5 cm?1, 97±5 cm?1, 109±5 cm?1, 186±5 cm?1, and 207±5 cm?1. The particles preferably have a specific surface area of 10 to 300 m2/g.
    Type: Grant
    Filed: March 6, 2012
    Date of Patent: February 23, 2016
    Assignee: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Satoshi Mogi, Kazuhiko Kato, Kenji Suzuoka, Yasunori Tabira, Isamu Yashima
  • Publication number: 20150084065
    Abstract: A single crystal SiC substrate capable of forming a good epitaxial thin film thereon to give a high-quality epitaxial substrate is provided. The single crystal SiC substrate has a CMP-treated surface and has 5 or fewer lattice defects measuring 30 nm or more in a direction parallel to the polished surface and 50 nm or more in a direction perpendicular to the polished surface as counted within a depth of 100 nm from the polished surface in a direction perpendicular to the polished surface and a length of 10 ?m in a direction parallel to the polished surface when observed in cross-section using a transmission electron microscope under the 00L reflection or the h-h0 reflection, where L and h are each an integer other than 0.
    Type: Application
    Filed: April 12, 2013
    Publication date: March 26, 2015
    Inventors: Atsushi Koike, Yasunori Tabira, Ryuichi Sato
  • Patent number: 8916070
    Abstract: A tin oxide particle having a structure characterized by peaks in Raman spectroscopy at at least 37±9 cm?1, 57±9 cm?1, 97±9 cm?1, 142±9 cm?1, 205±9 cm?1, 255±9 cm?1. The tin oxide particle preferably has an infrared transmittance of 80% or less at a wavelength of 1500 nm. The tin oxide particle preferably exhibits electroconductivity. The tin oxide particle is preferably substantially free from a dopant element that develops electroconductivity.
    Type: Grant
    Filed: January 10, 2012
    Date of Patent: December 23, 2014
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Kazuhiko Kato, Kenji Suzuoka, Yasunori Tabira, Isamu Yashima
  • Publication number: 20140183406
    Abstract: This negative electrode active material for nonaqueous electrolyte secondary batteries contains a silicon solid solution in which one or more elements selected from among group 3 semimetal elements and metal elements, group 4 semimetal elements and metal elements (excluding silicon) and group 5 non-metallic elements and semimetal elements are solid-solved in silicon. The elements solid-solved in silicon are present more at the crystal grain boundaries than in the inner portions of the crystal grains in the silicon solid solution.
    Type: Application
    Filed: June 25, 2012
    Publication date: July 3, 2014
    Applicant: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Hitohiko Ide, Daisuke Inoue, Shinya Kagei, Natsumi Shibamura, Yasunori Tabira
  • Publication number: 20140127569
    Abstract: An object of the present invention is to eliminate deviation in the quality of a chromate film provided on a copper foil for a negative electrode current collector to eliminate fluctuation of electric capacity in a lithium ion secondary battery. To achieve the object, as the copper foil for a negative electrode current collector of a lithium ion secondary battery, a copper foil provided with a chromate film for a negative electrode current collector in which Cr(OH)3 constitutes 85 area % or more of the chromate film is employed. Further, the copper foil provided with a chromate film for a negative electrode current collector according to the present application is preferable to be that the apparent orientation number N of oxygen closest to chrome in the chromate film is 4.5 or more.
    Type: Application
    Filed: April 10, 2012
    Publication date: May 8, 2014
    Applicant: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Tomoyuki Maeda, Sakiko Tomonaga, Yasunori Tabira
  • Publication number: 20140093734
    Abstract: Fluorine-doped tin oxide particles having a structure characterized by peaks at at least 123±5 cm?1, 139±5 cm?1, and 170±5 cm?1 in Raman spectroscopy. The particles preferably have additional Raman spectral peaks at 78±5 cm?1, 97±5 cm?1, 109±5 cm?1, 186±5 cm?1, and 207±5 cm?1. The particles preferably have a specific surface area of 10 to 300 m2/g.
    Type: Application
    Filed: March 6, 2012
    Publication date: April 3, 2014
    Applicant: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Satoshi Mogi, Kazuhiko Kato, Kenji Suzuoka, Yasunori Tabira, Isamu Yashima
  • Patent number: 8632695
    Abstract: A negative electrode active material for nonaqueous secondary batteries containing a silicon solid solution. The silicon solid solution has one or more than one of a group 3 semimetal or metal element, a group 4 semimetal or metal element except silicon, and a group 5 nonmetal or semimetal element incorporated in silicon. The solid solution shows an XRD pattern in which the position of the XRD peak of the solid solution corresponding to the XRD peak position assigned to the (422) plane of silicon shifts to the smaller or greater angle side relative to the position of the XRD peak assigned to the (422) plane of silicon peak by 0.1° to 1°. The solid solution has a lattice strain of 0.01% to 1% as determined by XRD.
    Type: Grant
    Filed: March 8, 2011
    Date of Patent: January 21, 2014
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Hitohiko Ide, Daisuke Inoue, Yanko Marinov Todorov, Natsumi Shibamura, Yasunori Tabira
  • Publication number: 20130344336
    Abstract: A chlorine-doped tin oxide particle exhibits peaks at at least 108±5 cm?1, 122±5 cm?1, and 133±5 cm?1 in Raman spectroscopy. The chlorine-doped tin oxide particle preferably has an additional Raman spectral peak at 337±10 cm?1. The chlorine-doped tin oxide particle preferably has a specific surface area of 10 to 300 m2/g. The chlorine-doped tin oxide particle preferably has an average primary particle size of 3 to 200 nm. The chlorine-doped tin oxide particle is preferably substantially free of oxygen deficiency.
    Type: Application
    Filed: March 1, 2012
    Publication date: December 26, 2013
    Applicant: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Satoshi Mogi, Kazuhiko Kato, Kenji Suzuoka, Yasunori Tabira, Isamu Yashima
  • Publication number: 20130256607
    Abstract: A tin oxide particle having a structure characterized by peaks in Raman spectroscopy at at least 37±9 cm?1, 57±9 cm?1, 97±9 cm?1, 142±9 cm?1, 205±9 cm?1, 255±9 cm?1. The tin oxide particle preferably has an infrared transmittance of 80% or less at a wavelength of 1500 nm. The tin oxide particle preferably exhibits electroconductivity. The tin oxide particle is preferably substantially free from a dopant element that develops electroconductivity.
    Type: Application
    Filed: January 10, 2012
    Publication date: October 3, 2013
    Applicant: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Kazuhiko Kato, Kenji Suzuoka, Yasunori Tabira, Isamu Yashima
  • Publication number: 20130202521
    Abstract: A manganese oxide particle having a hexagonal crystal structure or an analogous hexagonal crystal structure with an a-axis length of 8.73±1 ? and a c-axis length of 14.86±1 ?. The manganese oxide particle is preferably produced by a process including mixing an aqueous solution containing manganese (II) and an organic compound having a hydroxyl group while in a heated state with an alkali.
    Type: Application
    Filed: July 8, 2011
    Publication date: August 8, 2013
    Applicant: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Mami Yoshida, Kenji Suzuoka, Kazuhiko Kato, Yasunori Tabira, Isamu Yashima