Abstract: A multilayer wiring in a semiconductor device includes a first lower wiring formed in a first insulating layer, a via which is formed in a second insulating layer over the first insulating layer and which is connected to the first lower wiring, and an upper wiring connected to the via. The upper wiring has an outer edge at which a nick portion is formed beside a portion of the upper wiring to which the via is connected. The formation of the nick portion at the outer edge of the upper wiring prevents the via from enlarging.

Abstract: A multilayer wiring in a semiconductor device includes a first lower wiring formed in a first insulating layer, a via which is formed in a second insulating layer over the first insulating layer and which is connected to the first lower wiring, and an upper wiring connected to the via. The upper wiring has an outer edge at which a nick portion is formed beside a portion of the upper wiring to which the via is connected. The formation of the nick portion at the outer edge of the upper wiring prevents the via from enlarging.

Abstract: A multilayer wiring in a semiconductor device includes a first lower wiring formed in a first insulating layer, a via which is formed in a second insulating layer over the first insulating layer and which is connected to the first lower wiring, and an upper wiring connected to the via. The upper wiring has an outer edge at which a nick portion is formed beside a portion of the upper wiring to which the via is connected. The formation of the nick portion at the outer edge of the upper wiring prevents the via from enlarging.

Abstract: A multilayer wiring in a semiconductor device includes a first lower wiring formed in a first insulating layer, a via which is formed in a second insulating layer over the first insulating layer and which is connected to the first lower wiring, and an upper wiring connected to the via. The upper wiring has an outer edge at which a nick portion is formed beside a portion of the upper wiring to which the via is connected. The formation of the nick portion at the outer edge of the upper wiring prevents the via from enlarging.

Abstract: A multilayer wiring in a semiconductor device includes a first lower wiring formed in a first insulating layer, a via which is formed in a second insulating layer over the first insulating layer and which is connected to the first lower wiring, and an upper wiring connected to the via. The upper wiring has an outer edge at which a nick portion is formed beside a portion of the upper wiring to which the via is connected. The formation of the nick portion at the outer edge of the upper wiring prevents the via from enlarging.

Abstract: A multilayer wiring in a semiconductor device includes a first lower wiring formed in a first insulating layer, a via which is formed in a second insulating layer over the first insulating layer and which is connected to the first lower wiring, and an upper wiring connected to the via. The upper wiring has an outer edge at which a nick portion is formed beside a portion of the upper wiring to which the via is connected. The formation of the nick portion at the outer edge of the upper wiring prevents the via from enlarging.

Abstract: A multilayer wiring in a semiconductor device includes a first lower wiring formed in a first insulating layer, a via which is formed in a second insulating layer over the first insulating layer and which is connected to the first lower wiring, and an upper wiring connected to the via. The upper wiring has an outer edge at which a nick portion is formed beside a portion of the upper wiring to which the via is connected. The formation of the nick portion at the outer edge of the upper wiring prevents the via from enlarging.

Abstract: A multilayer wiring in a semiconductor device includes a first lower wiring formed in a first insulating layer, a via which is formed in a second insulating layer over the first insulating layer and which is connected to the first lower wiring, and an upper wiring connected to the via. The upper wiring has an outer edge at which a nick portion is formed beside a portion of the upper wiring to which the via is connected. The formation of the nick portion at the outer edge of the upper wiring prevents the via from enlarging.

Abstract: A semiconductor device formed by the steps of forming a contact hole in an insulation film so as to extend therethrough and so as to expose a conductor body at a bottom part of the contact hole, forming a barrier metal film of tungsten nitride on the bottom part and a sidewall surface of the contact hole with a conformal shape to the bottom part and the sidewall surface of the contact hole, forming a tungsten layer so as to fill the contact hole via the barrier metal film, and forming a tungsten plug in the contact hole by the tungsten layer by polishing away a part of the tungsten film on the insulation film until a surface of the insulation film is exposed, wherein there is conducted a step of cleaning a surface of the conductor body prior to the forming step of the barrier metal film.

Abstract: A semiconductor device formed by the steps of forming a contact hole in an insulation film so as to extend therethrough and so as to expose a conductor body at a bottom part of the contact hole, forming a barrier metal film of tungsten nitride on the bottom part and a sidewall surface of the contact hole with a conformal shape to the bottom part and the sidewall surface of the contact hole, forming a tungsten layer so as to fill the contact hole via the barrier metal film, and forming a tungsten plug in the contact hole by the tungsten layer by polishing away a part of the tungsten film on the insulation film until a surface of the insulation film is exposed, wherein there is conducted a step of cleaning a surface of the conductor body prior to the forming step of the barrier metal film.

Abstract: A method of fabricating a semiconductor device comprises the step of forming a nickel monosilicide layer selectively over a silicon region defined by an insulation film by a self-aligned process. The self-aligned process comprises the steps of forming a metallic nickel film on a silicon substrate on which the insulation film and the silicon region are formed, such that the metallic nickel film covers the insulation film and the silicon region, forming a first nickel silicide layer primarily of a Ni2Si phase on a surface of the silicon region of the metallic nickel film by applying an annealing process to the silicon substrate, removing the metallic nickel film, after the step of forming the first nickel silicide layer, by a selective wet etching process, and converting the first nickel silicide layer to a second nickel silicide layer primarily of a NiSi phase by a thermal annealing process conducted in a silane gas.

Abstract: A method of fabricating a semiconductor device includes the steps of forming a metallic nickel film on a silicon substrate such that the metallic nickel film covers an insulation film on the silicon substrate and a silicon surface of the silicon substrate, annealing the silicon substrate in a silane gas ambient at a temperature not exceeding 220° C. to form a first nickel silicide layer having a composition primarily of Ni2Si on the silicon surface and a surface of the metallic nickel film, removing the metallic nickel film after the step of forming the nickel silicide layer by a wet etching process, and converting the first nickel silicide layer to a second nickel silicide layer primarily of nickel monosilicide (NiSi) by applying a thermal annealing process.

Abstract: A method of fabricating a semiconductor device comprises the steps of forming a contact hole in an insulation film so as to extend therethrough and so as to expose a conductor body at a bottom part of the contact hole, forming a barrier metal film of tungsten nitride on the bottom part and a sidewall surface of the contact hole with a conformal shape to the bottom part and the sidewall surface of the contact hole, forming a tungsten layer so as to fill the contact hole via the barrier metal film, and forming a tungsten plug in the contact hole by the tungsten layer by polishing away a part of the tungsten film on the insulation film until a surface of the insulation film is exposed, wherein there is conducted a step of cleaning a surface of the conductor body prior to the forming step of the barrier metal film.

Abstract: A method of fabricating a semiconductor device comprises the step of forming a nickel monosilicide layer selectively over a silicon region defined by an insulation film by a self-aligned process. The self-aligned process comprises the steps of forming a metallic nickel film on a silicon substrate on which the insulation film and the silicon region are formed, such that the metallic nickel film covers the insulation film and the silicon region, forming a first nickel silicide layer primarily of a Ni2Si phase on a surface of the silicon region of the metallic nickel film by applying an annealing process to the silicon substrate, removing the metallic nickel film, after the step of forming the first nickel silicide layer, by a selective wet etching process, and converting the first nickel silicide layer to a second nickel silicide layer primarily of a NiSi phase by a thermal annealing process conducted in a silane gas.

Abstract: A method of fabricating a semiconductor device includes the steps of forming a metallic nickel film on a silicon substrate such that the metallic nickel film covers an insulation film on the silicon substrate and a silicon surface of the silicon substrate, annealing the silicon substrate in a silane gas ambient at a temperature not exceeding 220° C. to form a first nickel silicide layer having a composition primarily of Ni2Si on the silicon surface and a surface of the metallic nickel film, removing the metallic nickel film after the step of forming the nickel silicide layer by a wet etching process, and converting the first nickel silicide layer to a second nickel silicide layer primarily of nickel monosilicide (NiSi) by applying a thermal annealing process.

Abstract: A method of fabricating a semiconductor device comprises the steps of forming a contact hole in an insulation film so as to extend therethrough and so as to expose a conductor body at a bottom part of the contact hole, forming a barrier metal film of tungsten nitride on the bottom part and a sidewall surface of the contact hole with a conformal shape to the bottom part and the sidewall surface of the contact hole, forming a tungsten layer so as to fill the contact hole via the barrier metal film, and forming a tungsten plug in the contact hole by the tungsten layer by polishing away a part of the tungsten film on the insulation film until a surface of the insulation film is exposed, wherein there is conducted a step of cleaning a surface of the conductor body prior to the forming step of the barrier metal film.