Abstract: A chemical amplification type positive resist composition comprising a novolak resin, a resin insoluble or poorly soluble itself in an alkali aqueous solution but becoming soluble in an alkali aqueous solution by the action of an acid, and an acid generator, wherein when the novolak resin is measured by gel permeation chromatography (GPC) using a 254 nm UV detector using polystyrene as a standard, the area ratio of components having molecular weights of 1000 or less is 25% or less based on the total pattern area excepting unreacted monomers; and the chemical amplification type positive resist composition can reduce cost without deteriorating basic abilities such as sensitivity, resolution and the like, and shows small unevenness due to standing wave, and can improved pattern profile, particularly, line edge roughness.

Abstract: A chemical amplification type positive resist composition is provided, comprising a resin which has at least one polymerization unit selected from a polymerization unit of 3-hydroxy-1-adamantyl acrylate and a polymerization unit of 3,5-dihydroxy-1-adamantyl (meth)acrylate, a polymerization unit of hydroxystyrene and a polymerization unit having a group uhstable to an acid, is itself insoluble or poorly soluble in an alkali but becomes alkali-soluble after said group unstable to an acid is dissociated by the action of an acid; and an acid generator, the composition being excellent in various abilities such as sensitivity, resolution, heat resistance, film retention ratio, applicability, exposure clearance, dry etching resistance and the like, particularly having further improved resolution and exposure clearance.

Abstract: A chemical amplification type positive resist composition excellent in balance of properties such as resolution, profile, sensitivity, dry etching resistance, adhesion and the like which comprises a resin which has the following polymeric units (A), (B) and (C); and an acid generating agent.

Abstract: A chemical amplification type positive resist composition showing a high transmittance at a wavelength of 157 nm and manifesting excellent balance of abilities is provided which comprises a resin having polymerization units of the general formulae (I) and (II) and insoluble or poorly soluble itself in an alkali aqueous solution but becoming soluble in an alkali aqueous solution by the action of an acid; and an acid generating agent: 1

Abstract: A chemical amplification type positive resist composition, which can reduce cost steeply without significantly decreasing basic abilities, is provided, and the chemical amplification type positive resist composition comprises (A) a resin having a polymerization unit derived from p-hydroxystyrene and a polymerization unit of the formula (1) or formula (2) 1

Abstract: A negative working chemical amplification type resist composition, which is capable of giving more improved resolution; and comprises an alkali-soluble resin, a cross-linking agent, a N-substituted succinimide compound represented by the following formula (I): wherein R represents an unsubstituted or substituted alkyl, an alicyclic hydrocarbon residue, an aryl or a camphor group, and an acid generator other than the above N-substituted succinimide compound is provided.

Abstract: The object of the present invention is to provide resin composition for intermediate layer of a three-layer resist comprising (A) a polyorganosilsesquioxane resin having a weight-average molecular weight of from 1000 to 50000 and having two or more functional groups, which polymerize or condense at the presence of a acid, in the molecule, and (B) a compound generating an acid by electromagnetic wave or heat, and resin composition for intermediate layer of a three-layer resist, comprising (C) a polyorganosilsesquioxane resin having in the molecule a hydroxyl group and having a weigh-average molecular weight of from 1000 to 50000, as resin composition for intermediate layer of a three-layer resist which, when ketone compounds, aromatic compounds and the like are used as a resist solvent, does not cause dissolution of an intermediate layer in applying an upper layer resist and does not cause formation of a mixing layer at the interface with the upper layer resist, and which shows little change by time, excellent

Abstract: A positive resist composition is provided which comprises a resin having 2-alkyl-2-adamantyl (meth)acrylate polymerization unit represented by the following formula (I): wherein R1 represents hydrogen or methyl and R2 represents an alkyl, and being insoluble or barely soluble in alkali, but being converted to soluble in alkali by the action of an acid; and an acid generator represented by the following formula (V): wherein Q1, Q2 and Q3 independently represent hydrogen, a hydroxyl group, an alkyl having 1 to 6 carbon atoms or an alkoxy having 1 to 6 carbon atoms, and n is an integer of 4 to 8; and gives a good resolution upon exposure by ArF excimer laser and has little substrate dependency.

Abstract: A chemical amplifying type positive resist composition which provides a resist pattern having an exceedingly improved line edge roughness, and is excellent in various resist performances such as dry etching resistance, sensitivity and resolution; and comprises: (A) an acid generator containing (a) a sulfonium salt represented by the following formula (I):  wherein Q1 and Q2 is alkyl or a cycloalkyl, or Q1 and Q2 form, together with a sulfur atom to which Q1 and Q2 are adjacent, an heteroalicyclic group; Q3 represents a hydrogen atom, Q4 represents alkyl or a cycloalkyl, or Q3 and Q4 form, together with a CHC(O) group to which Q3 and Q4 are adjacent, a 2-oxocycloalkyl group; and Q5SO3− represents an organosulfonate ion, and (b) at least one onium salt selected from a triphenylsulfonium salt represented by the following formula (IIa), and a diphenyliodonium salt represented by the following formula (IIb):  wherein P1 to P5 represent hydrogen, a hydroxyl group

Abstract: A chemical amplification type positive resist composition is provided which gives resist patterns showing remarkably improved line edge roughness and comprises an acid generator containing a benzenesulfonate ion of the formula (I): 1

Abstract: A chemical amplification type positive resist composition that enables a resist pattern free from deformation in a side wall thereof and excellent in evenness and is excellent in sensitivity as well as resolution is provided and the chemical amplification type positive resist composition comprises a resin which has a polymerization unit derived from p-hydroxystyrene and a polymerization unit having a group unstable against acid, and is insoluble or hardly soluble in an alkaline medium itself but becoming alkaline-soluble after the acid-unstable group being cleaved by the action of the generated acid; an acid generating agent; and a compound represented by the following formula (I): 1

Abstract: A chemically amplified positive resist composition excellent in adhesion to a substrate, as well as good in dry-etching resistance; suitable for use in excimer laser lithography utilizing ArF, KrF or the like; and comprising a resin (X) which, per se, is insoluble in alkali but becomes soluble in alkali when subjected to an action of acid, and has a polymeric unit represented by the formula(I), a polymeric unit represented by the formula(II) and a polymeric unit represented by the formula(III): and an acid generating agent (Y).

Abstract: A chemically amplified positive resist composition which is suitable for use in an exposure process utilizing an ArF excimer laser and is capable of forming a resist coat exhibiting a high hydrophillcity; is excellent in adhesion to a substrate and satisfactory in resist performance characteristics; and comprises a resin (X) which has a polymeric unit(a) derived from dihydroxy-1-adamantyl (meth)acrylate and a polymeric unit(b) derived from 2-alkyl-2-adamantyl (meth)acrylate, and which, per se, is insoluble or slightly soluble in alkali but becomes soluble in alkali due to an action of acid; and an acid generating agent (Y).

Abstract: A chemical amplifying type positive resist composition, excellent in balance of performance of resolution and sensitivity, having high dry etching resistance and comprising;

Abstract: A chemically amplified positive resist composition excellent in sensitivity and resolution as well as other resist performance characteristics comprising a resin (X) which has a polymeric unit represented by the following formula (I): wherein R1 represents hydrogen or methyl, R2 and R3 represent alkyl having 1 to 4 carbon atoms, and R4 and R5 represent hydrogen, hydroxyl or alkyl, polymeric unit represented by the following formula (II): and a polymeric unit derived from unsaturated dicarboxylic acid anhydride selected from maleic anhydride and itaconic anhydride; and an acid generating agent (Y).

Abstract: A positive resist composition comprising a binder resin and a radiation-sensitive compound, wherein the binder resin contains a polymerization unit of the following formula (I) and a polymerization unit of the following formula (II) and becomes alkali-soluble by the radiation-sensitive compound after irradiation with radioactive ray: 1

Abstract: A chemical amplifying type positive resist composition having resolution and sensitivity that are well balanced, undergoing a minimum of shrinkage due to the irradiation with electron rays of SEM, and comprising a resin that has a polymerization unit derived from an unsaturated monomer expressed by the following formula (1) and that itself is insoluble in an alkali but becomes alkali-soluble due to the action of an acid; and an acid generating agent: 1

Abstract: A chemically amplifying type positive resist composition suitable for use in the lithography utilizing an ArF or KrF excimer laser and excellent in the shape of profile is provided, which comprises a resin which has an alkali-soluble group protected by 2-alkyl-2-adamantyl group or 1-adamantyl-1-alkylalkyl group, and which, per se, is insoluble or slightly soluble in alkali but becomes soluble in alkali by the action of an acid; and a sulfonium salt acid generating agent represented by the following formula (I): 1

Abstract: A chemical amplifying type positive resist composition having excellent sensitivity and resolution, manifesting no generation of scum is provided, which comprises a resin which has a polymerization unit derived from hydroxystyrene and a polymerization unit derived from 2-ethyl-2-adamantyl (meth)acrylate, and is insoluble or poorly soluble itself in an alkali, but becomes alkali-soluble after dissociation of the above-mentioned acid unstable group by the action of an acid; a radiation sensitive acid generating agent; and polypropylene glycol.

Abstract: A positive resist composition is provided which comprises a resin having 2-alkyl-2-adamantyl (meth)acrylate polymerization unit represented by the following formula (I): 1