Abstract: Provided is a photoelectric conversion element comprising ITiO as a transparent electrode that is formed using an inline-type sputtering method, and utilizing the high transmittance up to the near-infrared ray region and excellent conductivity of ITiO. Using the inline-type sputtering method, a first transparent conductive oxide film 8 comprising indium oxide or tin-containing indium oxide that includes indium oxide as a main component and tin at an atomic ratio Sn/(In+Sn) of 19 atomic % or less is formed on a photoelectric conversion layer 7 side, and a second transparent conductive oxide film 9 comprising a titanium-containing indium oxide that includes indium oxide as a main component, and titanium at an atomic ratio Ti/(In+Ti) of 0.5 atomic % to 3.5 atomic % is laminated on an opposite side of the first transparent conductive film 8 from the photoelectric conversion layer 7.

Abstract: Provided is a photoelectric conversion element comprising ITiO as a transparent electrode that is formed using an inline-type sputtering method, and utilizing the high transmittance up to the near-infrared ray region and excellent conductivity of ITiO. Using the inline-type sputtering method, a first transparent conductive oxide film 8 comprising indium oxide or tin-containing indium oxide that includes indium oxide as a main component and tin at an atomic ratio Sn/(In+Sn) of 19 atomic % or less is formed on a photoelectric conversion layer 7 side, and a second transparent conductive oxide film 9 comprising a titanium-containing indium oxide that includes indium oxide as a main component, and titanium at an atomic ratio Ti/(In+Ti) of 0.5 atomic % to 3.5 atomic % is laminated on an opposite side of the first transparent conductive film 8 from the photoelectric conversion layer 7.

Abstract: A multilayer transparent electroconductive film is obtained by stacking a transparent electroconductive film (II) on a transparent electroconductive film (I), and in this structure, the transparent electroconductive film (I) contains one or more added elements selected from aluminum and gallium, and the content of the added elements is in a range represented by ?2.18×[Al]+1.74?[Ga]??1.92×[Al]+6.10. The transparent electroconductive film (II) contains one or more added elements selected from aluminum and gallium, and the content of the added elements is in a range represented by ?[Al]+0.30?[Ga]??2.68×[Al]+1.74. In this case, [Al] is the aluminum content expressed as the atomic ratio (%) Al/(Zn+Al) and [Ga] is the gallium content expressed as the atomic ratio (%) Ga/(Zn+Ga).

Abstract: The present invention provides a transparent conductive glass substrate with a surface electrode having a low reflectivity, a low absorption, and a high transmittance, and provides a thin film solar cell including the surface electrode and having a higher photoelectric conversion efficiency than that of the prior arts. The transparent conductive glass substrate with the surface electrode is obtained in such a way that, on a translucent glass substrate, a low-refractive-index transparent thin film having a refractive index of 1.6 to 1.8 at a wavelength of 550 nm and a film thickness of 50 nm to 150 nm is formed as a first layer, and, on the low-refractive-index transparent thin film, an amorphous indium-oxide-based transparent conductive film as a second layer and a rough film made of a crystalline zinc-oxide-based transparent conductive film as a third layer are formed in that order.

Abstract: The present invention provides a transparent-conductive-film laminate and a manufacturing method therefor, and provides a thin-film solar cell using the transparent-conductive-film laminate and a manufacturing method for the thin-film solar cell. The transparent-conductive-film laminate has a structure, the structure including an indium-oxide-based transparent conductive film (I) with a surface roughness (Ra) of not more than 1.0 nm formed on a translucent substrate, and a zinc-oxide-based transparent conductive film (II) formed on the indium-oxide-based transparent conductive film (I); and has a surface roughness (Ra) of not less than 30 nm as a laminate, a haze ratio of not less than 8%, a resistance value of not more than 30 ?/sq., and an average absorptivity with respect to light in a wavelength range of 400 nm to 1200 nm of not more than 15%.

Abstract: The invention provides a transparent-conductive-film laminate and manufacturing method therefor, transparent-conductive-film laminate being useful as a surface electrode in manufacture of a high-efficiency silicon-based thin-film solar cell, having a roughness structure excellent in light scattering, and having an excellent effect of optical confinement, and provides a thin-film solar cell using transparent-conductive-film laminate and a manufacturing method for the thin-film solar cell. Transparent-conductive-film laminate has a structure including: an indium-oxide-based transparent conductive film (I) having a film thickness of not less than 10 nm and not more than 300 nm; and a zinc-oxide-based transparent conductive film (II) having a film thickness of not less than 200 nm, and has a surface having a crystalline structure with projections and depressions mixed therein, a surface roughness (Ra) of not less than 30 nm, a haze ratio of not less than 8%, and a resistance value of not more than 30 ?/sq.

Abstract: [Object] Provided are: a Zn—Si—O-based oxide sintered body, which suppresses abnormal discharge and so forth when used as a sputtering target, or suppresses a splash phenomenon when used as a tablet for vapor deposition; a method for producing the Zn—Si—O-based oxide sintered body; and the like. [Solution] The Zn—Si—O-based oxide sintered body contains zinc oxide as a main component and Si, and is characterized in that a Si content is 0.1 to 10 atomic % with an atomic ratio of Si/(Zn+Si), the Si element is contained in a wurtzite-type zinc oxide phase to form a solid solution, and the oxide sintered body does not contain a SiO2 phase and zinc silicate (Zn2SiO4) as a spinel-type composite oxide phase.

Abstract: A multilayer transparent electroconductive film is obtained by stacking a transparent electroconductive film (II) on a transparent electroconductive film (I), and in this structure, the transparent electroconductive film (I) contains one or more added elements selected from aluminum and gallium, and the content of the added elements is in a range represented by ?2.18×[Al]+1.74?[Ga]??1.92×[Al]+6.10. The transparent electroconductive film (II) contains one or more added elements selected from aluminum and gallium, and the content of the added elements is in a range represented by ?[Al]+0.30?[Ga]??2.68×[Al]+1.74. In this case, [Al] is the aluminum content expressed as the atomic ratio (%) Al/(Zn+Al) and [Ga] is the gallium content expressed as the atomic ratio (%) Ga/(Zn+Ga).

Abstract: A transparent electrically conductive substrate having a high photovoltaic conversion efficiency surface electrode, and a method for its manufacture, are disclosed. A thin-film solar cell and a method for its manufacture are also disclosed. An indium oxide based amorphous transparent electrically conductive film is formed on the substrate as an underlying film 21 and a zinc oxide based crystalline transparent electrically conductive film is formed on the so formed amorphous transparent electrically conductive film to form a surface electrode 2 of an optimum uneven surface structure. As a consequence, the surface electrode 2 having a high light confining effect may be provided and a thin-film solar cell 10 may be provided which exhibits higher photovoltaic conversion efficiency (FIG.

Abstract: A coaxial dielectric filter comprising a straight cutoff waveguide, at least two coaxial dielectric resonators disposed coaxially or substantially coaxially and at an interval in the cutoff waveguide in its lengthwise direction, a rod-like input-side antenna whose leading end stands close, or inserted, to the inside of an input-side inner conductor of the coaxial dielectric resonator disposed on the input side, and a rod-like output-side antenna whose leading end stands close, or inserted, to the inside of an output-side inner conductor of the coaxial dielectric resonator disposed on the output side. This filter is characterized in that an adjacent-side end of at least one of coaxial dielectric resonators adjacent to each other forms a slope which is inclined with respect to the cutoff waveguide in its cross section perpendicular to the lengthwise direction.

Abstract: A magnetic compensating circuit includes a magnetic sensor (1), a control circuit (2) for generating a signal for magnetic compensation, and coils (3) for magnetic compensation. The magnetic sensor has a pair of amorphous magnetic substance wires (101) arranged in parallel, coils (102) for providing the pair of amorphous magnetic substance wires with bias magnetic fields in directions opposite to each other, a high-frequency power source (105) for supplying the pair of amorphous magnetic substance wires with high-frequency currents, and circuits (106, 107, 108, 109) for outputting a potential difference derived from the output of the pair of amorphous magnetic substance wires. Thus, this magnetic compensating circuit is capable of detecting a minute external magnetic field with high accuracy.

Abstract: A magnetic disc manufacturing apparatus is includes a polishing device for conducting a surface polishing treatment on a disc, a supply device for supplying lubricant onto the polished disc, and a feeding mechanism for feeding the disc between the devices. If necessary, it is provided with a curing device for curing the lubricant on the disc. The treatments of the devices and the disc feeding operation are synchronized with one another, and a disc processed in each device is fed to a next device at a constant time interval by the feeding mechanism, thereby performing a continuous disc manufacturing process.