Abstract: A magnetic sensor includes: a substrate; and first and second magnetoresistive devices on one surface of the substrate. Each of the first and second magnetoresistive devices includes: a fixed layer having an easy magnetization axis perpendicular to the one surface and having a fixed magnetization direction; a free layer having a variable magnetization direction; and an intermediate layer made of a non-magnetic material and arranged between the fixed layer and the free layer. The fixed layer includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer.

Abstract: Provided is a production method for a magnetoresistive element including treating a stacked layer into a predetermined shape. The stacked layer includes a magnetoresistive layer whose resistance changes depending on a magnetic field and a cap layer above the magnetoresistive layer and having a thickness in a range of 10 nm to 60 nm. The method further includes covering and protecting the stacked layer with an insulating layer, forming an opening in the insulating layer by reactive etching and exposing a surface of the cap layer at the opening, etching the cap layer in a range less than a total thickness of the cap layer by ion milling of the surface, and depositing an upper layer to be a part of the magnetoresistive element. The upper layer is in contact with the surface of the cap layer after the etching.

Abstract: There are provided: an element array 10a including a plurality of tunnel magnetoresistive elements 20 respectively having a fixed magnetic layer 21, a free magnetic layer 22, and an insulation layer 23 provided between the fixed magnetic layer 21 and the free magnetic layer 22, the elements respectively for varying the tunnel resistance of the insulation layer 23 by influence of an external magnetic field; and an electric circuit 30 that applies a voltage to a plurality of the tunnel magnetoresistive elements 20 forming the element array 10a, with the voltage to be applied to each tunnel magnetoresistive element being equal to or higher than 0.1 mV and equal to or lower than 50 mV.

Abstract: A method for producing a tunnel magnetoresistive element includes a stacking step, then in-magnetic field heating, and then dry etching. The stacking includes stacking a B absorption layer which is in contact with an upper surface of a CoFeB layer. The dry etching includes removal of layers to the B absorption layer. An end of etching is set as an end point time detected by an analysis device when a final layer before the B absorption layer directly above the CoFeB layer is exposed has reduced to a prescribed level, or when the B absorption layer directly above the CoFeB layer has increased to the prescribed level. An amount of over-etching after the end point time is specified in advance, and the B absorption layer is stacked such that the thickness from the prescribed level to the upper surface of the CoFeB layer corresponds to the over-etching amount.

Abstract: A tunnel magnetic resistance element includes the following, a fixed magnetic layer with a fixed direction of magnetization, a free magnetic layer in which the direction of magnetization changes, and an insulating layer which is positioned between the fixed magnetic layer and the free magnetic layer. The fixed magnetic layer, the free magnetic layer, and the insulating layer form a magnetic tunnel junction. A resistance of the insulating layer changes by a tunnel effect according to a difference in an angle between the direction of magnetization of the fixed magnetic layer and the direction of magnetization of the free magnetic layer. The free magnetic layer includes a ferromagnetic layer, a soft magnetic layer, and a magnetic bonding layer placed in between. Material of the magnetic bonding layer include Ru or Ta, and a layer thickness is 1.0 nm to 1.3 nm.

Abstract: A method for producing a tunnel magnetoresistive element includes a stacking step, then in-magnetic field heating, and then dry etching. The stacking includes stacking a B absorption layer which is in contact with an upper surface of a CoFeB layer. The dry etching includes removal of layers to the B absorption layer. An end of etching is set as an end point time detected by an analysis device when a final layer before the B absorption layer directly above the CoFeB layer is exposed has reduced to a prescribed level, or when the B absorption layer directly above the CoFeB layer has increased to the prescribed level. An amount of over-etching after the end point time is specified in advance, and the B absorption layer is stacked such that the thickness from the prescribed level to the upper surface of the CoFeB layer corresponds to the over-etching amount.

Abstract: Provided is a production method for a magnetoresistive element including treating a stacked layer into a predetermined shape. The stacked layer includes a magnetoresistive layer whose resistance changes depending on a magnetic field and a cap layer above the magnetoresistive layer and having a thickness in a range of 10 nm to 60 nm. The method further includes covering and protecting the stacked layer with an insulating layer, forming an opening in the insulating layer by reactive etching and exposing a surface of the cap layer at the opening, etching the cap layer in a range less than a total thickness of the cap layer by ion milling of the surface, and depositing an upper layer to be a part of the magnetoresistive element. The upper layer is in contact with the surface of the cap layer after the etching.

Abstract: A magnetic sensor includes: a substrate; and first and second magnetoresistive devices on one surface of the substrate. Each of the first and second magnetoresistive devices includes: a fixed layer having an easy magnetization axis perpendicular to the one surface and having a fixed magnetization direction; a free layer having a variable magnetization direction; and an intermediate layer made of a non-magnetic material and arranged between the fixed layer and the free layer. The fixed layer includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer.

Abstract: A magnetic sensor includes a substrate that has a main surface, a free layer that has a magnetic easy axis in an in-plane direction parallel to the main surface, an intermediate layer that is disposed between the substrate and the free layer, and a fixed layer that is disposed between the substrate and the intermediate layer. The fixed layer includes: a first ferromagnetic layer a magnetization direction of which is fixed in a first direction that is nonparallel to the main surface; a second ferromagnetic layer a magnetization direction of which is fixed in a second direction in which a component of a direction parallel to a normal line of the main surface is opposite to the first direction; and a nonmagnetic layer that is disposed between the first ferromagnetic layer and the second ferromagnetic layer.

Abstract: A tunnel magnetic resistance element includes the following, a fixed magnetic layer with a fixed direction of magnetization, a free magnetic layer in which the direction of magnetization changes, and an insulating layer which is positioned between the fixed magnetic layer and the free magnetic layer. The fixed magnetic layer, the free magnetic layer, and the insulating layer form a magnetic tunnel junction. A resistance of the insulating layer changes by a tunnel effect according to a difference in an angle between the direction of magnetization of the fixed magnetic layer and the direction of magnetization of the free magnetic layer. The free magnetic layer includes a ferromagnetic layer, a soft magnetic layer, and a magnetic bonding layer placed in between. Material of the magnetic bonding layer include Ru or Ta, and a layer thickness is 1.0 nm to 1.3 nm.

Abstract: There are provided: an element array 10a including a plurality of tunnel magnetoresistive elements 20 respectively having a fixed magnetic layer 21, a free magnetic layer 22, and an insulation layer 23 provided between the fixed magnetic layer 21 and the free magnetic layer 22, the elements respectively for varying the tunnel resistance of the insulation layer 23 by influence of an external magnetic field; and an electric circuit 30 that applies a voltage to a plurality of the tunnel magnetoresistive elements 20 forming the element array 10a, with the voltage to be applied to each tunnel magnetoresistive element being equal to or higher than 0.1 mV and equal to or lower than 50 mV.

Abstract: A biomagnetism measuring device includes a magnetic sensor and a support unit. The magnetic sensor includes a tunnel magneto-resistive element including a fixed magnetic layer, a free magnetic layer and an insulating layer. The insulating layer is disposed between the fixed magnetic layer and the free magnetic layer, and has resistance being changed by a tunnel effect depending on an angle difference between a direction of magnetization of the fixed magnetic layer and a direction of magnetization of the free magnetic layer. The support unit supports the magnetic sensor in such a way that the tunnel magneto-resistive element faces a living body. The magnetic sensor outputs an output signal in accordance with a resistance value of the insulating layer, the resistance value being changed by magnetism emitted from the living body.

Abstract: A magneto-resistance element includes a resistance variable layer and a trap layer. The resistance variable layer includes the alloy having B. A resistance of the resistance variable layer changes according to a magnetic field. The trap layer is for trapping the B diffused from the resistance variable layer. With this structure, the B in the resistance variable layer becomes easily trapped in the trap layer and becomes difficult to be diffused to an outside of the magneto-resistance element. A difficulty associated with B diffusion to the outside of the magneto-resistance element can be prevented from occurring.

Abstract: A magnetic sensor includes a magnetization fixed layer, a magnetic field detecting layer, and an intermediate layer. The magnetization fixed layer is formed into a thin-film shape, and a magnetization direction of the magnetization fixed layer is fixed in a direction parallel to an in-plane direction. A magnetization direction of the magnetic field detecting layer changes depending on an external magnetic field. The intermediate layer is disposed between the magnetization fixed layer and the magnetic field detecting layer, and a resistance value of the intermediate layer changes depending on an angle between the magnetization direction of the magnetization fixed layer and the magnetization direction of the magnetic field detecting layer. A magnetization amount per unit area of the magnetic field detecting layer is less than 0.2 [memu/cm2].

Abstract: A magnetic sensor includes a magnetization fixed layer, a magnetic field detecting layer, and an intermediate layer. The magnetization fixed layer is formed into a thin-film shape, and a magnetization direction of the magnetization fixed layer is fixed in a direction parallel to an in-plane direction. A magnetization direction of the magnetic field detecting layer changes depending on an external magnetic field. The intermediate layer is disposed between the magnetization fixed layer and the magnetic field detecting layer, and a resistance value of the intermediate layer changes depending on an angle between the magnetization direction of the magnetization fixed layer and the magnetization direction of the magnetic field detecting layer. A magnetization amount per unit area of the magnetic field detecting layer is less than 0.2 [memu/cm2].

Abstract: A magneto-resistance element includes a resistance variable layer and a trap layer. The resistance variable layer includes the alloy having B. A resistance of the resistance variable layer changes according to a magnetic field. The trap layer is for trapping the B diffused from the resistance variable layer. With this structure, the B in the resistance variable layer becomes easily trapped in the trap layer and becomes difficult to be diffused to an outside of the magneto-resistance element. A difficulty associated with B diffusion to the outside of the magneto-resistance element can be prevented from occurring.

Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.

Abstract: A biomagnetism measuring device includes a magnetic sensor and a support unit. The magnetic sensor includes a tunnel magneto-resistive element including a fixed magnetic layer, a free magnetic layer and an insulating layer. The insulating layer is disposed between the fixed magnetic layer and the free magnetic layer, and has resistance being changed by a tunnel effect depending on an angle difference between a direction of magnetization of the fixed magnetic layer and a direction of magnetization of the free magnetic layer. The support unit supports the magnetic sensor in such a way that the tunnel magneto-resistive element faces a living body. The magnetic sensor outputs an output signal in accordance with a resistance value of the insulating layer, the resistance value being changed by magnetism emitted from the living body.

Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.

Abstract: A method of operating a metal-halogen battery such as a zinc-bromine battery, intended to prevent dendrite from formation on an electrode during charging the battery. The method comprises the step of carrying out an operation of discharging the battery at a predetermined constant current having a first current value throughout charging the battery; and the step of initiating an operation of charging the battery at a second current value of two times the first current value and maintaining the changing operation at a third current value which linearly decreases from the second current value to a zero value toward a termination of charging the battery.