Abstract: A radio wave control system includes a phase adjustment plate that transmits a radio wave from a second main surface to a first main surface and focuses the radio wave on a focal point; and a reflection plate installed at a position irradiated with the radio wave transmitted through the phase adjustment plate.

Abstract: A distributed antenna includes a strip member extending in a strip-like shape including a dielectric body of a plate shape having a first surface that is one surface of the dielectric body and a second surface that is opposite to the first surface; a transmission line provided on the first surface, on the second surface, or between the first surface and the second surface; and a plurality of antenna elements electrically connected to the transmission line and disposed in a distributed manner on the first surface or on the second surface, or electrically connected to the transmission line and disposed in a distributed manner between the first surface and the second surface.

Abstract: The invention relates to a poly alkyl(meth)acrylate polymer comprising polybutadiene-based monomer units and a process for preparing the same. The invention also relates to the use of said polymer as a viscosity index improver in lubricant formulation and to lubricant compositions comprising said polymer.

Abstract: An additive composition contains a viscosity index improver and a pour point depressant. A process can be used for preparing the additive composition. The additive composition can be used as a lubricant additive in a lubricating oil formulation, and lubricating oil formulations can contain the additive composition.

Abstract: An additive composition contains a viscosity index improver and a pour point depressant. A process can be used for preparing the additive composition. The additive composition can be used as a lubricant additive in a lubricating oil formulation, and lubricating oil formulations can contain the additive composition.

Abstract: The invention relates to a poly alkyl(meth)acrylate polymer comprising polybutadiene-based monomer units and a process for preparing the same. The invention also relates to the use of said polymer as a viscosity index improver in lubricant formulation and to lubricant compositions comprising said polymer.

Abstract: Selected comb polymers contain specified amounts of macromonomer and nitrogen-containing (meth)acrylates. Lubricant compositions can contain such comb polymers. The selected comb polymers can be used as solubilizers in lubricant compositions, especially in engine oil (EO) compositions.

Abstract: There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed.

Abstract: Selected comb polymers contain specified amounts of macromonomer and nitrogen-containing (meth)acrylates. Lubricant compositions can contain such comb polymers. The selected comb polymers can be used as solubilizers in lubricant compositions, especially in engine oil (EO) compositions.

Abstract: The present invention provides a radiation-damage-compensation-circuit and a SOI-MOSFET that has high radiation resistance. The SOI-MOSFET has the radiation-damage-compensation-circuit to recover the characteristics of the SOI-MOSFET after X-ray irradiation.

Abstract: The present invention provides a radiation-damage-compensation-circuit and a SOI-MOSFET that has high radiation resistance. The SOI-MOSFET has the radiation-damage-compensation-circuit to recover the characteristics of the SOI-MOSFET after X-ray irradiation.

Abstract: There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed.

Abstract: There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed.

Abstract: A drive system includes a drive source and a transmission mechanism transmitting a torque between the drive source and a drive wheel. The transmission mechanism includes at least one clutch switching between an engaged state of transmitting the torque between elements constituting the drive system and a disengaged state of failing to transmit the torque. An ECU detects at least one loaded state in which an excessively large torque can be applied to the drive system in a direction from the drive wheel, and disengages a predetermined clutch when the at least one loaded state in which an excessively large torque can be applied is detected. In the case where an excessively large torque can be applied to the drive system, the torque applied to a predetermined element constituting the drive system can be blocked and the torque applied to the drive system can be suppressed with a good response.

Abstract: A drive system includes a drive source and a transmission mechanism transmitting a torque between the drive source and a drive wheel. The transmission mechanism includes at least one clutch switching between an engaged state of transmitting the torque between elements constituting the drive system and a disengaged state of failing to transmit the torque. An ECU detects at least one loaded state in which an excessively large torque can be applied to the drive system in a direction from the drive wheel, and disengages a predetermined clutch when the at least one loaded state in which an excessively large torque can be applied is detected. In the case where an excessively large torque can be applied to the drive system, the torque applied to a predetermined element constituting the drive system can be blocked and the torque applied to the drive system can be suppressed with a good response.

Abstract: There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed.

Abstract: There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed.

Abstract: There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed.

Abstract: There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed.

Abstract: A semiconductor device includes: a first semiconductor layer of a first conductivity type; an insulation layer on the first semiconductor layer; a second semiconductor layer in the insulation layer; an active element in the second semiconductor layer; a first semiconductor region on the first semiconductor layer and of a second conductivity type; a second semiconductor region in the first semiconductor region and of the second conductivity type with a higher impurity concentration than the first semiconductor region; a first conductor in a through hole in the insulation layer and connected to the second semiconductor region; a second conductor above or within the insulation layer, the second conductor surrounding the first conductor such that an outside edge thereof is outside the second semiconductor region; a third conductor connecting the first and second conductors; and a fourth conductor connected to the first semiconductor layer.