Abstract: Provided is an electronic element that functions as a switch or memory without using metal nanoparticle. The electronic element includes: one electrode 5A and an other electrode 5B arranged to have a nanogap therebetween; and halide ion 6 provided between the electrodes 5A and 5B; and on one of the electrodes.

Abstract: Provided is an electronic element that functions as a switch or memory without using metal nanoparticle. The electronic element comprises: one electrode 5A and other electrode 5B arranged to have a nanogap therebetween; and halide ion 6 provided between the electrodes 5A and 5B; and on one of the electrodes. When voltage between the electrodes 5A and 5B is continuously varied from a positive value to a negative value and from a negative value to a positive value, a waveform of electrical current flowing between the electrodes 5A and 5B is asymmetrical. The state of the halide ion 6 is varied in accordance with a value of the voltage that is applied between the electrodes 5A and 5B so that an information-writing-state and an information-erasing-state are maintained in accordance with a value of the electric current that flows between the electrodes 5A and 5B.

Abstract: This invention is to provide a nanodevice, which is combined with an electronic device such as a diode, tunnel device and MOS transistor, integrated circuit and manufacturing method of the nanodevice. A nanodevice includes: a first insulating layer 2; one electrode 5A and the other electrode 5B provided to have a nanogap on the first insulating layer 2; a metal nanoparticle or a functional molecule provided between the one electrode 5A and the other electrode 5B; a second insulating layer 8 provided on the first insulating layer 2, and on the one electrode 5A and the other electrode 5B to embed the metal nanoparticle or the functional molecule. The second insulating layer works as a passivating layer.

Abstract: This invention is to provide a nanodevice, which is combined with an electronic device such as a diode, tunnel device and MOS transistor, integrated circuit and manufacturing method of the nanodevice. A nanodevice includes: a first insulating layer 2; one electrode 5A and the other electrode 5B provided to have a nanogap on the first insulating layer 2; a metal nanoparticle or a functional molecule provided between the one electrode 5A and the other electrode 5B; a second insulating layer 8 provided on the first insulating layer 2, and on the one electrode 5A and the other electrode 5B to embed the metal nanoparticle or the functional molecule. The second insulating layer works as a passivating layer.