Patents by Inventor Yasuo Idei
Yasuo Idei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8618562Abstract: A light emitting device includes: a multilayer body including a light emitting layer made of a semiconductor; a first bonding metal layer attached to the multilayer body; a substrate; and a second bonding metal layer attached to the substrate and bonded to the first bonding metal layer at a bonding interface, at least one of a planar size of the first bonding metal layer on the bonding interface side and a planar size of the second bonding metal layer on the bonding interface side being smaller than a planar size of the substrate.Type: GrantFiled: September 21, 2009Date of Patent: December 31, 2013Assignee: Kabushiki Kaisha ToshibaInventor: Yasuo Idei
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Patent number: 8299480Abstract: A semiconductor light emitting device includes: an upper growth layer including a light emitting layer; a transparent substrate through which a radiant light from the light emitting layer passes; and a foundation layer provided between the upper growth layer and the transparent substrate, the foundation layer having a surface-controlling layer and a bonding layer bonded with the transparent substrate. The surface-controlling layer is made of compound semiconductor including at least Ga and As. The upper growth layer is formed on an upper surface of the surface-controlling layer. A lattice constant difference at an interface between the surface-controlling layer and the upper growth layer is smaller than that at an interface between the bonding layer and the transparent substrate.Type: GrantFiled: February 24, 2009Date of Patent: October 30, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Ryo Saeki, Katsufumi Kondo, Yasuo Idei
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Publication number: 20100289046Abstract: A light emitting device includes: a multilayer body including a light emitting layer made of a semiconductor; a first bonding metal layer attached to the multilayer body; a substrate; and a second bonding metal layer attached to the substrate and bonded to the first bonding metal layer at a bonding interface, at least one of a planar size of the first bonding metal layer on the bonding interface side and a planar size of the second bonding metal layer on the bonding interface side being smaller than a planar size of the substrate.Type: ApplicationFiled: September 21, 2009Publication date: November 18, 2010Applicant: KABUSHIKI KAISHA TOSHIBAInventor: Yasuo Idei
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Publication number: 20090224269Abstract: A semiconductor light emitting device includes: an upper growth layer including a light emitting layer; a transparent substrate through which a radiant light from the light emitting layer passes; and a foundation layer provided between the upper growth layer and the transparent substrate, the foundation layer having a surface-controlling layer and a bonding layer bonded with the transparent substrate. The surface-controlling layer is made of compound semiconductor including at least Ga and As. The upper growth layer is formed on an upper surface of the surface-controlling layer. A lattice constant difference at an interface between the surface-controlling layer and the upper growth layer is smaller than that at an interface between the bonding layer and the transparent substrate.Type: ApplicationFiled: February 24, 2009Publication date: September 10, 2009Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Ryo Saeki, Katsufumi Kondo, Yasuo Idei
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Patent number: 7141445Abstract: There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.Type: GrantFiled: September 30, 2004Date of Patent: November 28, 2006Assignee: Kabushiki Kaisha ToshibaInventors: Hideto Sugawara, Koichi Nitta, Hirohisa Abe, Kuniaki Konno, Yasuo Idei
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Publication number: 20050040427Abstract: There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.Type: ApplicationFiled: September 30, 2004Publication date: February 24, 2005Inventors: Hideto Sugawara, Koichi Nitta, Hirohisa Abe, Kuniaki Konno, Yasuo Idei
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Patent number: 6815725Abstract: There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.Type: GrantFiled: April 17, 2003Date of Patent: November 9, 2004Assignee: Kabushiki Kaisha ToshibaInventors: Hideto Sugawara, Koichi Nitta, Hirohisa Abe, Kuniaki Konno, Yasuo Idei
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Publication number: 20030205714Abstract: There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.Type: ApplicationFiled: April 17, 2003Publication date: November 6, 2003Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hideto Sugawara, Koichi Nitta, Hirohisa Abe, Kuniaki Konno, Yasuo Idei
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Patent number: 6576933Abstract: There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.Type: GrantFiled: March 9, 2001Date of Patent: June 10, 2003Assignee: Kabushiki Kaisha ToshibaInventors: Hideto Sugawara, Koichi Nitta, Hirohisa Abe, Kuniaki Konno, Yasuo Idei
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Publication number: 20020030197Abstract: There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.Type: ApplicationFiled: March 9, 2001Publication date: March 14, 2002Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hideto Sugawara, Koichi Nitta, Hirohisa Abe, Kuniaki Konno, Yasuo Idei
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Patent number: 5744828Abstract: A semiconductor light emitting device has a semiconductor substrate (1). On a first principal plane of the substrate, an emission layer is formed. In a predetermined region on the emission layer, a current blocking layer (10) is formed. On the current blocking layer, an excitation electrode (20) is formed. A substrate electrode (9) is formed on a second principal plane of the substrate. The excitation electrode is composed of a bonding pad (21) and a current supply electrode (22). The current blocking layer is under the bonding pad. The current blocking layer prevents a current from flowing under the bonding pad. The current supply electrode improves the light emission efficiency of the device.Type: GrantFiled: July 10, 1996Date of Patent: April 28, 1998Assignee: Kabushiki Kaisha ToshibaInventors: Hideki Nozaki, Kazumi Unno, Yasuo Idei, Katsuhiko Nishitani
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Patent number: 5386139Abstract: A semiconductor light emitting element in which light leakage from the vicinity of an active layer end thereof is significantly reduced, and an interval at which the element is disposed is sufficiently narrow, so that there can be realized an optimal distance-measuring accuracy when used for a light source of a camera's automatic focusing mechanism.Type: GrantFiled: April 15, 1993Date of Patent: January 31, 1995Assignee: Kabushiki Kaisha ToshibaInventors: Yasuo Idei, Toshio Shimizu
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Patent number: 5073806Abstract: To form a semiconductor light emitting element provided with three light emitting portions into a monolithic structure, the element of double heterojunction structure has a p-type GaAs semiconductor substrate, an n-type GaAlAs current restriction layer formed with conductive regions arranged at regular intervals, a p-type GaAlAs cladding layer, a p-type GaAlAs active layer, an n-type GaAlAs cladding layer, and two grooves formed extending from the surface of the n-type GaAlAs cladding layer deep through the p-type GaAlAs active layer and between the two adjacent conductive regions. Since the three light emitting portions are formed at precise intervals in a monolithic structure, when mounted on a camera for use with an automatic focusing mechanism, it is possible to measure a distance to a subject in trigonometrical survey without the subject being out of focus.Type: GrantFiled: October 17, 1990Date of Patent: December 17, 1991Assignee: Kabushiki Kaisha ToshibaInventor: Yasuo Idei