Abstract: To provide an ultrasonic cleaning apparatus and an ultrasonic cleaning method capable of suppressing generation of cleaning unevenness after the ultrasonic cleaning of an object to be cleaned. An aspect of the present invention includes a cleaning tank 21 in which a cleaning liquid 23 is stored; a first and a second ultrasonic transducers 34a and 34b that give ultrasonic vibrations to the object to be cleaned 22 immersed in a cleaning liquid within the cleaning tank; a first ultrasonic generator 36 that applies a high-frequency output to the first ultrasonic transducer; a second ultrasonic generator 37 that applies a high-frequency output to the second ultrasonic transducer; and a controller 38 that varies and controls at least one of the outputs of the first and the second ultrasonic generators, and a first ultrasonic wave oscillated from the first ultrasonic transducer is caused to interfere with a second ultrasonic wave oscillated from the second ultrasonic transducer.

Abstract: A target object to be irradiated is transported into an irradiating chamber through a transport inlet for irradiation with an active energy beam under an inert gas atmosphere in an active energy beam irradiating section included in the irradiating chamber and, then is transported out of the irradiating chamber. When the object is subject to above steps, the gas flow resistance at the transport outlet is controlled such that the active energy beam irradiation is carried out under the condition of X/Y≧1, where X represents the gas amount passing through the transport inlet, and Y represents the gas amount passing through the transport outlet.

Abstract: A target object to be irradiated is transported into an irradiating chamber through a transport inlet for irradiation with an active energy beam under an inert gas atmosphere in an active energy beam irradiating section included in the irradiating chamber and, then is transported out of the irradiating chamber. When the object is subject to above steps, the gas flow resistance at the transport outlet is controlled such that the active energy beam irradiation is carried out under the condition of X/Y≧1, where X represents the gas amount passing through the transport inlet, and Y represents the gas amount passing through the transport outlet.

Abstract: A water-soluble polymer sensitive to salts is a copolymer of (A) 10 to 90% of acrylic acid and/or methacrylic acid; and (B) 90 to 10% of a vinyl monomer of Formula (I): ##STR1## (wherein R represents a hydrogen atom or a methyl group; and R.sup.1 represents an aryl group or a cycloalkyl group); or the foregoing component (A); (B) 2 to 70% of a vinyl monomer of Formula (II): ##STR2## (wherein R.sup.2 represents an alkyl group, an aryl group or a cycloalkyl group); and (C) 2 to 40% of a vinyl monomer of Formula (III): ##STR3## (wherein R.sup.3 represents an aryl group), 2 to 70 mole % of the repeating units derived from the acrylic acid and/or methacrylic acid being in the form of a salt. It is soluble in tap water, but insoluble in an aqueous solution containing not less than 0.5% of an inorganic salt of a monovalent ion.

Abstract: A mixture of an alkali soluble resin and either a quinonediazide compound or poly(2-methylpentene-1-sulfone provides a positive acting resist material, which is very high in a critical exposure dose at which the resist begins to gel by radiation-induced crosslinking. By using this resist material in direct delineation of patterns with ionizing radiation, the problem of gelling of the resist film in the areas repeatedly scanned for the detection of the alignment marks is obviated. A novolac resin comprising a t-butylphenol or phenylphenol segment is suitable as the alkali soluble resin.

Abstract: A registration mark to be used for a micro-fine working technique such as LSI's includes a smaller protrusion pattern within a larger recess pattern formed in a surface of the semiconductor substrate. The recess and protrusion patterns are used for coarse and fine positioning, respectively. The protrusion pattern implements precise positioning because it is isolated from other regions.

Abstract: An x-ray lithography mask including a thick silicon peripheral rib with a window formed therein and a multi-layered membrane transparent to x-rays and visible light supported by the rib and covering the window. The membrane consists essentially of at least two silicon nitride layers and at least one silicon oxide layer sandwiched between the silicon nitride layers. The silicon nitride layers are preferably positioned at opposite surfaces of the multi-layered membrane.