Abstract: Disclosed is a solar cell module that reduces entering of moisture into a solar cell module from a side surface SF thereof, and has high moisture-resistant properties. The disclosed solar cell module is a solar cell module in which solar cells 13a to 13d are sealed by a sealing member 21 between a transparent front surface protective member 11 and a back surface protective member 12, wherein the sealing member 21 includes at least a first sealing member 14 and a second sealing member 15, the first sealing member and the second sealing member are different in type, and the sealing member 21 exposed to a side surface SF of the solar cell module is the first sealing member 14.

Abstract: There is provided a solar cell module capable of discharging water retained on the upper surface of a solar cell panel therefrom while maintaining the mechanical strength of a frame body. This solar cell module includes a gasket including a groove to discharge the water retained on the upper surface of the solar cell panel, arranged between the solar cell panel and the frame body.

Abstract: In the solar cell module 100, the insulating sheet 15 has the slit 151 which is in contact with the output lead 12 inside the opening portion 141 of the rear-surface-side protection member 14.

Abstract: Disclosed is a solar cell module that reduces entering of moisture into a solar cell module from a side surface SF thereof, and has high moisture-resistant properties. The disclosed solar cell module is a solar cell module in which solar cells 13a to 13d are sealed by a sealing member 21 between a transparent front surface protective member 11 and a back surface protective member 12, wherein the sealing member 21 includes at least a first sealing member 14 and a second sealing member 15, the first sealing member and the second sealing member are different in type, and the sealing member 21 exposed to a side surface SF of the solar cell module is the first sealing member 14.

Abstract: A solar cell unit includes first and second solar cells (C1, C2), a first wiring member, a second wiring member, and a third wiring member. The first solar cell (C1) and the second solar cell (C2) each having a first principle surface and a second principle surface opposite the first principle surface, a polarity of the second principle surface being different from a polarity of the first principle surface. The first wiring member electrically connects electrodes, formed on surfaces pointing at a first direction, of the first solar cell (C1) and the second solar cell (C2). The second wiring member is electrically connected to an electrode, formed on a surface pointing at a second direction, of the first solar cell (C1). The third wiring member is electrically connected to an electrode, formed on a surface pointing at the second direction, of the second solar cell (C2).

Abstract: This invention provides a photovoltaic semiconductor device of high efficiency capable of maintaining good interface characteristics of an amorphous semiconductor layer and a transparent electrode by eliminating damage caused by plasma of a plasma doping layer formed by doping impurity to the i-type amorphous semiconductor layer. The i-type amorphous semiconductor layer substantially not containing impurity for reducing electric resistance on a textured surface of an n-type single crystalline substrate. Then, the plasma doping layer is formed by exposing the n-type single crystalline substrate with the amorphous semiconductor layer formed thereon in an atmosphere of excited gas containing p-type impurity and diffusing the impurity to the amorphous semiconductor layer. A p-type amorphous semiconductor thin film layer containing p-type impurity is formed on the plasma doping layer by chemical vapor deposition and a transparent electrode 5 is formed on the p-type amorphous semiconductor thin film.

Abstract: A photovoltaic element which directly converts an optical energy such as solar light into an electric energy. After many uneven sections are formed on the surface of an n-type crystalline silicon substrate (1), the surface of the substrate (1) is isotropically etched. Then the bottoms (b) of the recessed sections are rounded and a p-type amorphous silicon layer (3) is formed on the surface of the substrate (1) through an intrinsic amorphous silicon layer (2). The shape of the surface of the substrate (1) after isotropic etching is such that the bottoms of the recessed sections are slightly rounded and therefore the amorphous silicon layer can be deposited in a uniform thickness.

Abstract: A photovoltaic element which directly converts an optical energy such as solar light into an electric energy. After many uneven sections are formed on the surface of an n-type crystalline silicon substrate (1), the surface of the substrate (1) is isotropically etched. Then the bottoms (b) of the recessed sections are rounded and a p-type amorphous silicon layer (3) is formed on the surface of the substrate (1) through an intrinsic amorphous silicon layer (2). The shape of the surface of the substrate (1) after isotropic etching is such that the bottoms of the recessed sections are slightly rounded and therefore the amorphous silicon layer can be deposited in a uniform thickness.

Abstract: This invention provides a photovoltaic semiconductor device of high efficiency capable of maintaining good interface characteristics of an amorphous semiconductor layer and a transparent electrode by eliminating damage caused by plasma of a plasma doping layer formed by doping impurity to the i-type amorphous semiconductor layer. The i-type amorphous semiconductor layer substantially not containing impurity for reducing electric resistance on a textured surface of an n-type single crystalline substrate. Then, the plasma doping layer is formed by exposing the n-type single crystalline substrate with the amorphous semiconductor layer formed thereon in an atmosphere of excited gas containing p-type impurity and diffusing the impurity to the amorphous semiconductor layer. A p-type amorphous semiconductor thin film layer containing p-type impurity is formed on the plasma doping layer by chemical vapor deposition and a transparent electrode 5 is formed on the p-type amorphous semiconductor thin film.

Abstract: A photovoltaic element which directly converts an optical energy such as solar light into an electric energy. After many uneven sections are formed on the surface of an n-type crystalline silicon substrate (1), the surface of the substrate (1) is isotropically etched. Then the bottoms (b) of the recessed sections are rounded and a p-type amorphous silicon layer (3) is formed on the surface of the substrate (1) through an intrinsic amorphous silicon layer (2). The shape of the surface of the substrate (1) after isotropic etching is such that the bottoms of the recessed sections are slightly rounded and therefore the amorphous silicon layer can be deposited in a uniform thickness.