Abstract: Provided is a prepreg capable of attaining thermal expansion coefficient reduction and elastic modulus increase without increasing the filling ratio of an inorganic filler therein and/or without using a resin having a low thermal expansion coefficient, and thereby capable of reducing warpage thereof. Specifically, provided is a prepreg containing glass fibers and a thermosetting resin composition, and containing a layer of plural glass fiber filaments aligned to run nearly parallel to each other in one direction. Also provided are a production method for the prepreg, a laminate containing the prepreg and its production method, a printed circuit board containing the laminate, and a semiconductor package having a semiconductor device mounted on the printed circuit board.

Abstract: Discloses are a thermosetting resin composition containing a maleimide compound including an unsaturated maleimide compound having a specified chemical structure, a thermosetting resin, an inorganic filler, and a molybdenum compound; a laminate plate for wiring boards obtained by coating a base material with a thermosetting resin composition containing a thermosetting resin, silica, and a specified molybdenum compound and then performing semi-curing to form a prepreg, and laminating and molding the prepreg; and a method for manufacturing a resin composition varnish including specified steps. According to the present invention, electronic components having low thermal expansion properties and excellent drilling processability and heat resistance, for example, a prepreg, a laminate plate, an interposer, etc., can be provided.

Abstract: Discloses are a thermosetting resin composition containing a maleimide compound including an unsaturated maleimide compound having a specified chemical structure, a thermosetting resin, an inorganic filler, and a molybdenum compound; a laminate plate for wiring boards obtained by coating a base material with a thermosetting resin composition containing a thermosetting resin, silica, and a specified molybdenum compound and then performing semi-curing to form a prepreg, and laminating and molding the prepreg; and a method for manufacturing a resin composition varnish including specified steps. According to the present invention, electronic components having low thermal expansion properties and excellent drilling processability and heat resistance, for example, a prepreg, a laminate plate, an interposer, etc., can be provided.

Abstract: Discloses are a thermosetting resin composition containing a maleimide compound including an unsaturated maleimide compound having a specified chemical structure, a thermosetting resin, an inorganic filler, and a molybdenum compound; a laminate plate for wiring boards obtained by coating a base material with a thermosetting resin composition containing a thermosetting resin, silica, and a specified molybdenum compound and then performing semi-curing to form a prepreg, and laminating and molding the prepreg; and a method for manufacturing a resin composition varnish including specified steps. According to the present invention, electronic components having low thermal expansion properties and excellent drilling processability and heat resistance, for example, a prepreg, a laminate plate, an interposer, etc., can be provided.

Abstract: Discloses are a thermosetting resin composition containing a maleimide compound including an unsaturated maleimide compound having a specified chemical structure, a thermosetting resin, an inorganic filler, and a molybdenum compound; a laminate plate for wiring boards obtained by coating a base material with a thermosetting resin composition containing a thermosetting resin, silica, and a specified molybdenum compound and then performing semi-curing to form a prepreg, and laminating and molding the prepreg; and a method for manufacturing a resin composition varnish including specified steps. According to the present invention, electronic components having low thermal expansion properties and excellent drilling proccessability and heat resistance, for example, a prepreg, a laminate plate, an interposer, etc., can be provided.

Abstract: A laminate body containing at least one resin composition layer and at least one glass substrate layer, wherein the resin composition layer includes a resin composition containing a thermosetting resin and an inorganic filler and the glass substrate layer accounts for from 10 to 95% by volume of the entire laminate body. A laminate plate containing at least one cured resin layer and at least one glass substrate layer, wherein the cured resin layer includes a cured product of the resin composition. A printed wiring board having the laminate plate and a wiring provided on the surface of the laminate plate. A method for producing the laminate plate including a cured resin layer forming step of forming the cured resin layer on the surface of a glass substrate.

Abstract: A laminate body containing one or more resin composition layers and two or more glass substrate layers, wherein at least one layer of those resin composition layers is between glass substrate layers, and is a fiber-containing resin composition layer of a composition that contains a thermosetting resin and a fibrous base material. A laminate plate containing one or more cured resin layers and two or more glass substrate layers, wherein at least one layer of those cured resin layers is between glass substrate layers, and is a fiber-containing cured resin layer of the fiber-containing resin composition. A printed wiring board having the above-mentioned laminate plate and a wiring provided on the surface thereof. A method for producing the laminate plate.

Abstract: Provided are a metal-polishing liquid that comprises an oxidizing agent, an oxidized-metal etchant, a protective film-forming agent, a dissolution promoter for the protective film-forming agent, and water; a method for producing it; and a polishing method of using it. Also provided are materials for the metal-polishing liquid, which include an oxidized-metal etchant, a protective film-forming agent, and a dissolution promoter for the protective film-forming agent.

Abstract: A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The polishing slurry having a high metal-polishing rate, reducing etching rate and polishing friction, results in the production, with high productivity, of semiconductor devices reduced in dishing and erosion in metal wiring.

Abstract: An abrasive liquid for a metal comprising (1) an oxidizing agent for a metal, (2) a dissolving agent for an oxidized metal, (3) a first protecting film-forming agent such as an amino acid or an azole which adsorbs physically on the surface of the metal and/or forms a chemical bond, to thereby form a protecting film, (4) a second protecting film-forming agent such as polyacrylic acid, polyamido acid or a salt thereof which assists the first protecting film-forming agent in forming a protecting film and (5) water; and a method for polishing.

Abstract: Discloses are a thermosetting resin composition containing a maleimide compound including an unsaturated maleimide compound having a specified chemical structure, a thermosetting resin, an inorganic filler, and a molybdenum compound; a laminate plate for wiring boards obtained by coating a base material with a thermosetting resin composition containing a thermosetting resin, silica, and a specified molybdenum compound and then performing semi-curing to form a prepreg, and laminating and molding the prepreg; and a method for manufacturing a resin composition varnish including specified steps. According to the present invention, electronic components having low thermal expansion properties and excellent drilling processability and heat resistance, for example, a prepreg, a laminate plate, an interposer, etc., can be provided.

Abstract: Provided are a metal-polishing liquid that comprises an oxidizing agent, an oxidized-metal etchant, a protective film-forming agent, a dissolution promoter for the protective film-forming agent, and water; a method for producing it; and a polishing method of using it. Also provided are materials for the metal-polishing liquid, which include an oxidized-metal etchant, a protective film-forming agent, and a dissolution promoter for the protective film-forming agent.

Abstract: An abrasive liquid for a metal comprising (1) an oxidizing agent for a metal, (2) a dissolving agent for an oxidized metal, (3) a first protecting film-forming agent such as an amino acid or an azole which adsorbs physically on the surface of the metal and/or forms a chemical bond, to thereby form a protecting film, (4) a second protecting film-forming agent such as polyacrylic acid, polyamido acid or a salt thereof which assists the first protecting film-forming agent in forming a protecting film and (5) water; and a method for polishing.

Abstract: An abrasive liquid for a metal comprising (1) an oxidizing agent for a metal, (2) a dissolving agent for an oxidized metal, (3) a first protecting film-forming agent such as an amino acid or an azole which adsorbs physically on the surface of the metal and/or forms a chemical bond, to thereby form a protecting film, (4) a second protecting film-forming agent such as polyacrylic acid, polyamido acid or a salt thereof which assists the first protecting film-forming agent in forming a protecting film and (5) water; and a method for polishing.

Abstract: A polishing slurry for polishing an aluminum film used for LSI or the like and a method for polishing an aluminum film using the same are provided. A polishing slurry for polishing an aluminum film comprising a polyvalent carboxylic acid having a first stage acid dissociation exponent at 25° C. of 3 or lower, colloidal silica, and water, and having a pH from 2 to 4, and a polishing method for polishing an aluminum film using the polishing slurry.

Abstract: A polishing liquid for CMP has a composition loaded with, for example, an inorganic salt, a protective film forming agent and a surfactant capable of imparting a dissolution accelerating activity to enlarge a difference between polishing speed under non-load and polishing speed under load. By virtue of this polishing liquid for CMP, there can be simultaneously accomplished a speed increase for increasing CMP productivity, and wiring planarization for miniaturization and multilayer formation of wiring.

Abstract: A polishing slurry comprises a metal-oxidizing agent, a metal anticorrosive agent, an oxidized metal dissolving agent and water. The oxidized metal dissolving agent is at least one kind selected from the group consisting of an acid in which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.5 or more, an ammonium salt of the acid and an organic acid ester of the acid. The pH of the polishing slurry is within the range of 3 to 4. The concentration of the metal-oxidizing agent is within the range of 0.01 to 3 percent by weight. In the wiring-formation process of the semiconductor device, the conductor used for the barrier layer can be polished at a high polishing rate by using the polishing slurry having the low polishing particle concentration and the low metal anticorrosive agent concentration.

Abstract: A polishing slurry comprises a metal-oxidizing agent, a metal anticorrosive agent, an oxidized metal dissolving agent and water. The oxidized metal dissolving agent is at least one kind selected from the group consisting of an acid in which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.5 or more, an ammonium salt of the acid and an organic acid ester of the acid. The pH of the polishing slurry is within the range of 3 to 4. The concentration of the metal-oxidizing agent is within the range of 0.01 to 3 percent by weight. In the wiring-formation process of the semiconductor device, the conductor used for the barrier layer can be polished at a high polishing rate by using the polishing slurry having the low polishing particle concentration and the low metal anticorrosive agent concentration.

Abstract: Provided are a metal-polishing liquid that comprises an oxidizing agent, an oxidized-metal etchant, a protective film-forming agent, a dissolution promoter for the protective film-forming agent, and water; a method for producing it; and a polishing method of using it. Also provided are materials for the metal-polishing liquid, which include an oxidized-metal etchant, a protective film-forming agent, and a dissolution promoter for the protective film-forming agent.

Abstract: This invention provides a polishing medium for chemical-mechanical polishing, comprising an oxidizing agent for a conductor, a protective-film-forming agent for protecting a metal surface, an acid, and water; (1) the polishing medium having a pH of 3 or less, and the oxidizing agent being in a concentration of from 0.01 to 3% by weight, or (2) the polishing medium containing abrasive grains having an average particle diameter of 50 nm or less, and the abrasive grains having standard deviation of particle size distribution in a value of more than 5 nm.