Abstract: A process for the continuous modification of dihydrate gypsum includes calcining dihydrate gypsum into hemihydrate gypsum and recrystallizing the hemihydrate gypsum in an aqueous slurry to convert the hemihydrate gypsum into modified dihydrate gypsum of different crystalline form. The aqueous slurry in a recrystallization reaction tank is maintained at a constant temperature under stirring, and a feed rate of the hemihydrate gypsum to the recrystallization reaction tank and a discharge rate of the recrystallized dihydrate gypsum are controlled to substantially equal. Dihydrate gypsum as a starting raw material can be converted into high-purity, modified dihydrate gypsum of large crystals by recrystallizing the starting dihydrate gypsum after it is once calcined into hemihydrate gypsum.

Abstract: A process for the continuous modification of dihydrate gypsum includes calcining dihydrate gypsum into hemihydrate gypsum and recrystallizing the hemihydrate gypsum in an aqueous slurry to convert the hemihydrate gypsum into modified dihydrate gypsum of different crystalline form. The aqueous slurry in a recrystallization reaction tank is maintained at a constant temperature under stirring, and a feed rate of the hemihydrate gypsum to the recrystallization reaction tank and a discharge rate of the recrystallized dihydrate gypsum are controlled to substantially equal. Dihydrate gypsum as a starting raw material can be converted into high-purity, modified dihydrate gypsum of large crystals by recrystallizing the starting dihydrate gypsum after it is once calcined into hemihydrate gypsum.

Abstract: Disclosed is a process for the continuous modification of dihydrate gypsum. The process includes a hemihydration step of calcining the dihydrate gypsum as a raw material into hemihydrate gypsum and a recrystallization step of hydrating and recrystallizing the hemihydrate gypsum in an aqueous slurry to convert the hemihydrate gypsum into modified dihydrate gypsum of a crystalline form different from the dihydrate gypsum as the raw material.

Abstract: Disclosed is a process for the continuous modification of dihydrate gypsum. The process includes a hemihydration step of calcining the dihydrate gypsum as a raw material into hemihydrate gypsum and a recrystallization step of hydrating and recrystallizing the hemihydrate gypsum in an aqueous slurry to convert the hemihydrate gypsum into modified dihydrate gypsum of a crystalline form different from the dihydrate gypsum as the raw material.

Abstract: There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.

Abstract: It is an object of the present invention is to provide a polylactic acid resin composition in which a crystal nucleator appropriate for accelerating crystallization of polylactic acid rein is added. A polylactic acid resin composition comprising a polylactic acid resin, and a metal salt of a phosphorus compound of formula (I) wherein R1 and R2 may be the same or different and are hydrogen atom, C1-10alkyl or C2-10alkoxycarbonyl, or a polylactic acid resin composition comprising a polylactic acid resin, and a metal salt of a phosphorus compound of formula (II) wherein R3, R4, R5 and R6 may be the same or different and are hydrogen atom, C1-10alkyl or C2-10alkoxycarbonyl. The composition is excellent in heat resistance and forming processability.

Abstract: There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.

Abstract: There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.

Abstract: It is an object of the present invention is to provide a polylactic acid resin composition in which a crystal nucleator appropriate for accelerating crystallization of polylactic acid rein is added. A polylactic acid resin composition comprising a polylactic acid resin, and a metal salt of a phosphorus compound of formula (I) wherein R1 and R2 may be the same or different and are hydrogen atom, C1-10alkyl or C2-10alkoxycarbonyl, or a polylactic acid resin composition comprising a polylactic acid resin, and a metal salt of a phosphorus compound of formula (II) wherein R3, R4, R5 and R6 may be the same or different and are hydrogen atom, C1-10alkyl or C2-10alkoxycarbonyl. The composition is excellent in heat resistance and forming processability.

Abstract: There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.

Abstract: There is provided a gear for preventing a user from lapsing into an apneic state by maintaining the body of said user in an inclined posture during said user's sleep. The gear includes a clothing body worn by said user and a pad. The clothing body includes a back body and a front body. The pad is attached to the back body of the clothing body and extends in the longitudinal direction. The pad includes a plurality of segments arranged along the longitudinal direction, capacities of the segments are different from each other, and each segment is expanded in accordance with the capacity thereof by a fluid to be supplied to each segment.

Abstract: There is provided a gear for preventing a user from lapsing into an apneic state by maintaining the body of said user in an inclined posture during said user's sleep. The gear includes a clothing body worn by said user and a pad. The clothing body includes a back body and a front body. The pad is attached to the back body of the clothing body and extends in the longitudinal direction. The pad includes a plurality of segments arranged along the longitudinal direction, capacities of the segments are different from each other, and each segment is expanded in accordance with the capacity thereof by a fluid to be supplied to each segment.

Abstract: A &bgr;-diketonatocopper(I) complex which contains as a ligand (L) an allene compound and is represented by formula (2) wherein, R6 and R7 may be the same or different and each represents linear or branched C1-4 alkyl, C1-4 alkoxy, or linear or branched C1-4 fluoroalkyl, R8 represents hydrogen or fluorine, and L represents the allene compound, and a process for producing the same. The complex is useful in forming a thin copper film by metal-organic vapor deposition (hereinafter abbreviated as MOCVD) method.

Abstract: A &bgr;-diketonatocopper(I) complex which contains as a ligand (L) an allene compound and is represented by formula (2) 1

Abstract: A semiconductor unit is provided, which includes a substrate, a plurality of semiconductor components loaded on the substrate, and a cooling device provided above the semiconductor components. A flat-bottomed dent, slightly smaller than the semiconductor component, is provided on a compound injection unit of the cooling device, and an injection hole for injecting a compound is formed in communication with the dent. The compound is injected through the injection hole into the dent and into a clearance provided between the compound injection unit and the semiconductor component, thus forming a compound layer in between the compound injection unit and the semiconductor component.

Abstract: Quinoxaline derivatives having the formula I wherein X represents a halogen atom; R represents —COR1, —CH═CH—COOR2(R2 represents a C1-C4 alkyl group); —CN or —CH2OH, and R1 represents —S—R3 (R3 represents a C1-C4 alkyl or alkenyl group or phenyl or chlorophenyl group), —NH—R4 (R4 represents a C1-C4 alkoxy carbonylalkyl group, hydroxy alkyl group, phenyl group, C1-C4 alkoxy alkyl group or di C1-C4 alkyl amino group) are remarkably effective as selective herbicides.

Abstract: The present invention provides a nitrogen-containing cyclic compound represented by the formula (1): ##STR1## wherein R.sup.1 represents an alkyl group; R represents a hydrogen atom or an alkyl group; X represents an oxygen or sulfur atom or NR.sup.3 ; Q.sup.1 represents a hydrogen atom, or an alkyl, cycloalkyl, alkenyl or alkynyl group or a phenyl, naphthyl or heterocyclic group etc.; Q.sup.2 represents an alkyl, cycloalkyl or alkenyl group, or a phenyl or thienyl group etc.; A.sup.1 represents a carbon or nitrogen atom; A.sup.2 represents CR.sup.2 or NR.sup.2, or an oxygen or sulfur atom, or SO or SO.sub.2 ; A.sup.3 represents a single bond, or an oxygen or sulfur atom, or CR.sup.5 or NR.sup.5) and a herbicide comprising the same, which herbicide exhibits very high herbicidal activity at very low application rate and has selectivity against crops.

Abstract: The present invention provides a nitrogen-containing cyclic compound represented by the formula (1): ##STR1## (wherein R.sup.1 represents an alkyl group; R represents a hydrogen atom or an alkyl group; X represents an oxygen or sulfur atom or NR.sup.3 ; Q.sup.1 represents a hydrogen atom, or an alkyl, cycloalkyl, alkenyl or alkynyl group, or a phenyl, naphthyl or heterocyclic group etc.; Q.sup.2 represents an alkyl, cycloalkyl or alkenyl group, or a phenyl or thienyl group etc.; A.sup.1 represents a carbon or nitrogen atom; A.sup.2 represents CR.sup.2 or NR.sup.2, or an oxygen or sulfur atom, or SO or SO.sub.2 ; A.sup.3 represents a single bond, or an oxygen or sulfur atom, or CR.sup.5 or NR.sup.5) and a herbicide comprising the same , which herbicide exhibits very high herbicidal activity at very low application rate and has selectivity against crops.

Abstract: A wire bonding method comprising the steps of (a) disconnecting a first wire which is bonded on a first pad which is provided on a substrate, (b) forming a second pad on the first pad, and (c) bonding a second wire on the second pad, so that the second wire is electrically connected to the first pad. The step (a) may completely remove the first wire from the first pad, and the step (b) may form the second pad at least on a top surface of the first pad including a part which is damaged by the removal of the first wire. On the other hand, the step (a) may cut the first wire so that a tip end of the first wire remains bonded on the first pad, and the step (b) may form the second pad at least on a top surface of the first pad so as to completely cover the remaining tip end of the first wire.

Abstract: Disclosed are a herbicide and a plant growth regulator comprising a 2-arylaminopyrimidinone derivative represented by the formula (1): ##STR1## (wherein Q represents various kinds of aromatic ring or heterocyclic ring).This compound can be used safely to main crops and shows high herbicidal effect to many weeds with a low dosage, and also shows plant growth regulating effect.