Abstract: A silicon carbide manufacturing device includes a graphite crucible, in which a seed crystal is disposed, a gas-inducing pipe coupled with the graphite crucible, and an attachment prevention apparatus. The gas-inducing pipe has a column-shaped hollow part, through which a source gas flows into the graphite crucible. The attachment prevention apparatus includes a rod extending to a flow direction of the source gas, and a revolving and rotating element for revolving the rod along an inner wall of the gas-inducing pipe while rotating the rod on an axis of the rod in parallel to the flow direction.

Abstract: A silicon carbide manufacturing device includes a graphite crucible, in which a seed crystal is disposed, a gas-inducing pipe coupled with the graphite crucible, and an attachment prevention apparatus. The gas-inducing pipe has a column-shaped hollow part, through which a source gas flows into the graphite crucible. The attachment prevention apparatus includes a rod extending to a flow direction of the source gas, and a revolving and rotating element for revolving the rod along an inner wall of the gas-inducing pipe while rotating the rod on an axis of the rod in parallel to the flow direction.

Abstract: A process for growing a single crystal comprises providing a single crystal substrate acting as a seed crystal above a source material in a container, heating the source material in an inert gas atmosphere in the container to form a sublimed source material, and discharging the sublimed source material from the container through a port above the single crystal substrate, to cause the sublimed source material to flow along and in parallel with a surface of the single crystal substrate, and grow a single crystal on the surface of the single crystal substrate.