Abstract: A power semiconductor device according to the present invention comprises at least one insulating substrate; at least one power semiconductor element mounted on a metal pattern formed on the main surface of the insulating substrate; and a control circuit board which is arranged so that its first surface can oppose the above main surface of the insulating substrate with the power semiconductor element interposed therebetween, and which has at least one electronic component for control, mounted on a metal pattern formed on its second surface in parallel to the above first surface, and at least one through hole formed vertically to the first and second surfaces so as to electrically connect circuit patterns laminated between the first surface and the second surface, and this power semiconductor device is characterized in that the above through hole is filled with a filler.

Abstract: A power semiconductor device according to the present invention comprises at least one insulating substrate; at least one power semiconductor element mounted on a metal pattern formed on the main surface of the insulating substrate; and a control circuit board which is arranged so that its first surface can oppose the above main surface of the insulating substrate with the power semiconductor element interposed therebetween, and which has at least one electronic component for control, mounted on a metal pattern formed on its second surface in parallel to the above first surface, and at least one through hole formed vertically to the first and second surfaces so as to electrically connect circuit patterns laminated between the first surface and the second surface, and this power semiconductor device is characterized in that the above through hole is filled with a filler.

Abstract: An IGBT (121) and a diode (131) are joined onto an element arrangement portion (111a) of a first terminal member (111) and an element arrangement portion (112a) of a second terminal member (112) is joined onto the IGBT (121) and the diode (131). Further, an IGBT (122) and a diode (132) are joined onto the element arrangement portion (112a) of the second terminal member (112) and an element arrangement portion (113a) of a third terminal member (113) is joined onto the IGBT (122) and the diode (132). A transfer mold package (141) is so formed as to house the elements (121, 122, 131, 132). External connection portions (111b, 112b, 113b) of the terminal members (111, 112, 113) are drawn out of the package (141). The element arrangement portion(s) (111a, 113a) of the first and/or third terminal member (111, 113) are/is exposed out of the package (141).