Abstract: There is provided a technique that includes a quartz container in which an object to be processed, which contains a semiconductor, is arranged; a heater configured to emit heat; and a radiation control body arranged between the quartz container and the heater, wherein the radiation control body is configured to radiate a radiant wave of a wavelength transmittable through the quartz container by heating from the heater such that the radiant wave reaches the object to be processed in the quartz container.

Abstract: There is provided a technique that includes a reaction container in which an object to be processed, containing a semiconductor, is arranged; a heater configured to emit heat; and a radiation control body arranged between the reaction container and the heater, wherein the radiation control body is configured to radiate a radiant wave of a wavelength transmittable through the reaction container by selecting a wavelength of a radiation heat from the heater such that the radiant wave reaches the object to be processed in the reaction container.

Abstract: A method of producing a composite wafer including a semiconductor crystal layer, includes forming a sacrificial layer and the semiconductor crystal layer above a semiconductor crystal layer forming wafer in the stated order, etching the semiconductor crystal layer to partially expose the sacrificial layer and dividing the semiconductor crystal layer into a plurality of divided pieces, bonding the semiconductor crystal layer forming wafer and a transfer target wafer made of an inorganic material in such a manner that a first surface of the semiconductor crystal layer forming wafer faces and comes into contact with a second surface of the transfer target wafer, and etching the sacrificial layer to separate the transfer target wafer and the semiconductor crystal layer forming wafer from each other with the semiconductor crystal layer being left on the transfer target wafer.

Abstract: Disclosed is a hot wall type substrate processing apparatus, including a processing chamber which is to accommodate at least one product substrate therein; a heating member which is disposed outside of the processing chamber and which is to heat the product substrate; a processing gas supply system connected to the processing chamber; and an exhaust system, wherein with a member from which a Si film is exposed being disposed such as to be opposed to a surface on which selective growth is to be effected of the product substrate, an epitaxial film including Si is allowed to selectively grow on a Si surface of the product substrate.

Abstract: There is provided a substrate processing apparatus, comprising: a processing chamber in which a plurality of substrates are housed, the substrate having thereon a lamination film composed of any one of copper-indium, copper-gallium, or copper-indium-gallium; a reaction tube formed so as to constitute the processing chamber; a gas supply tube configured to introduce elemental selenium-containing gas or elemental sulfur-containing gas to the processing chamber; an exhaust tube configured to exhaust an atmosphere in the processing chamber; and a heating section provided so as to surround the reaction tube, wherein a porous coating film having a void rate of 5% to 15% mainly composed of a mixture of chromium oxide (CrxOy:x, y are arbitrary integer of 1 or more) silica is formed on a surface exposed to at least the elemental selenium-containing gas or the elemental sulfur-containing gas, out of the surface of the reaction tube on the processing chamber side.

Abstract: There is provide a substrate processing apparatus, comprising: a processing chamber configured to house a plurality of substrates with a laminated film formed thereon which is composed of any one of copper-indium, copper-gallium, or copper-indium-gallium; a gas supply tube configured to introduce elemental selenium-containing gas or elemental sulfur-containing gas into the processing chamber; an exhaust tube configured to exhaust an atmosphere in the processing chamber; and a heating section provided so as to surround the reaction tube, wherein a base of the reaction tube is made of a metal material.

Abstract: There is provided a substrate procession apparatus, comprising: a processing chamber configured to house a plurality of substrates with a laminated film formed thereon which is composed of any one of copper-indium, copper-gallium, or copper-indium-gallium; a reaction tube formed so as to constitute the processing chamber; a gas supply tube configured to introduce elemental selenium-containing gas or elemental sulfur-containing gas to the processing chamber; an exhaust tube configured to exhaust an atmosphere in the processing chamber; heating section provided so as to surround the reaction tube; and a fan configured to forcibly circulate the atmosphere in the processing chamber in a short-side direction of the plurality of glass substrates, on surfaces of the plurality of glass substrates.

Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Abstract: There are provided a substrate processing method and apparatus adapted to prevent deterioration of film thickness uniformity while maintaining the film forming rate. The substrate processing method comprises: (a) accommodating a plurality of substrates in a process chamber by carrying and stacking the substrates in the process chamber, (b) forming first amorphous silicon films to a predetermined thickness by heating at least the substrates and supplying first gas, and (c) forming second amorphous silicon films to a predetermined thickness by heating at least the substrates and supplying second gas different from the first gas. The first gas is higher order gas than the second gas.

Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Abstract: Films are formed on a plurality of substrates through a batch process while preventing formation of films on the rear surfaces of the substrates. For this, a substrate processing apparatus comprises a reaction vessel, supports, a support holder, and an induction heating device. The reaction vessel is configured to process substrates therein. The supports are made of a conductive material and having a disk shape, and each of the supports is configured to accommodate a substrate in its concave part in a state where the substrate is horizontally positioned with a top surface of the substrate being exposed. The concave part is formed concentrically with a circumference of the support, and a difference between radii of the support and the concave part is greater than a distance between neighboring two of the supports held by the support holder. The support holder is configured to hold at least the supports horizontally in multiple stages.

Abstract: There are provided a substrate processing method and apparatus adapted to prevent deterioration of film thickness uniformity while maintaining the film forming rate. The substrate processing method comprises: (a) accommodating a plurality of substrates in a process chamber by carrying and stacking the substrates in the process chamber, (b) forming first amorphous silicon films to a predetermined thickness by heating at least the substrates and supplying first gas, and (c) forming second amorphous silicon films to a predetermined thickness by heating at least the substrates and supplying second gas different from the first gas. The first gas is higher order gas than the second gas.

Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Abstract: Disclosed is a hot wall type substrate processing apparatus, including a processing chamber which is to accommodate at least one product substrate therein; a heating member which is disposed outside of the processing chamber and which is to heat the product substrate; a processing gas supply system connected to the processing chamber; and an exhaust system, wherein with a member from which a Si film is exposed being disposed such as to be opposed to a surface on which selective growth is to be effected of the product substrate, an epitaxial film including Si is allowed to selectively grow on a Si surface of the product substrate.

Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Abstract: This invention makes it possible to make even films composed of at least silicon and germanium with gradient germanium ratio along a film thickness direction thereof for a short deposition time. A temperature controller 61 controls a heater 2 so that temperature of wafers W will be changed from low (e.g. 400° C.) to high (e.g. 700° C.) by alternately repeating temperature changing process to heat up the wafers W and temperature regulating process when temperature of the wafers W does not change as much as that of the temperature changing process for a specific amount of time. While a gas controller 62 provides a reactive gas into a reaction tube 1 during the temperature regulating process, it controls a valve 31 to stop it during the temperature changing process.

Abstract: A semiconductor device fabricating method includes the step of supplying BCl3 as a doping gas, SiH4 as a film forming gas, and H2 as a carrier gas to a reaction chamber of a semiconductor device fabricating apparatus, wherein SiH4, BCl3 and H2 flow in the reaction chamber on the condition that the film forming pressure ranges from about 0.1 to 100 Pa and the film forming temperature ranges from about 400 to 700° C.