Patents by Inventor Yasuo Matsushita

Yasuo Matsushita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4540673
    Abstract: Sintered aluminum nitride having a high thermal conductivity, which comprises at least 65% by weight of aluminum nitride, and at least one of beryllium, a beryllium compound, lithium and a lithium compound, and a semi-conductor device using the same.
    Type: Grant
    Filed: April 29, 1982
    Date of Patent: September 10, 1985
    Assignee: Hitachi, Ltd.
    Inventors: Yukio Takeda, Satoru Ogihara, Mitsuru Ura, Kousuke Nakamura, Tadamichi Asai, Tokio Ohkoshi, Yasuo Matsushita, Kunihiro Maeda
  • Patent number: 4528121
    Abstract: Electroconductive ceramic materials with high density, high mechanical strength, high endurance to repeated current supply and excellent thermal shock resistance can be obtained by mixing 5 to 70 parts by weight of Al.sub.2 O.sub.3 or alumina ceramic materials containing 95% by weight or more of Al.sub.2 O.sub.3 and 30 to 95 parts by weight of at least one electroconductive material selected from of ZrB.sub.2, ZrC, ZrN, ZrSi.sub.2, TaB.sub.2, TaC, TaN, TaSi.sub.2, TiB.sub.2, TiC, TiN, Mo.sub.2 B.sub.5 and MoSi.sub.2 adding a molding binder, molding the mixture and sintering the molded mixture. The electroconductive ceramic is usable for heaters, glow plug heaters, electrical gas ignitors, kerosine gasifying burners, and electrodes or conductors for water processing or dialysis.
    Type: Grant
    Filed: October 27, 1983
    Date of Patent: July 9, 1985
    Assignee: Hitachi, Ltd.
    Inventors: Yasuo Matsushita, Kousuke Nakamura, Tetuo Kosugi
  • Patent number: 4517584
    Abstract: A semiconductor device with a semiconductor element encased in a hollow ceramic package. The portion of the package at which the semiconductor element is disposed is formed from a SiC-based substrate containing Be or a compound of Be with a thin SiO.sub.2 layer being capable of reacting with glass provided thereon and with a glass layer or a thin film circuit on the SiO.sub.2 layer.
    Type: Grant
    Filed: December 10, 1982
    Date of Patent: May 14, 1985
    Assignee: Hitachi, Ltd.
    Inventors: Yasuo Matsushita, Kousuke Nakamura, Mitsuru Ura
  • Patent number: 4467309
    Abstract: A high-temperature thermistor comprising, a polycrystalline sintered body consisting essentially of 0.1-8 weight percents of at least one kind selected from the group consisting of Be, BeO, Be.sub.2 C, B, BN, B.sub.2 O.sub.3 and B.sub.4 C which weight percents are calculated as the amount of only Be or B single substance from net amount, the balance SiC, and the inevitable impurities having not more than 2 weight percents of SiO.sub.2, not more than 0.1 weight percent of Al, not more than 0.2 weight percents of Fe, not more than 1 weight percent of Si, and not more than 0.4 weights percents of free carbon, a pair of electrode provided on the surfaces of the sintered body, and lead wires each connected to the respective electrodes, and a method of producing same.
    Type: Grant
    Filed: April 26, 1982
    Date of Patent: August 21, 1984
    Assignee: Hitachi, Ltd.
    Inventors: Yasuo Matsushita, Kousuke Nakamura, Mitsuru Ura
  • Patent number: 4370421
    Abstract: From 0.1 to 3.5% by weight of beryllium oxide powder, calculated as beryllium, is added to silicon carbide powder containing up to 0.1% by weight of aluminum, up to 0.1% by weight of boron and up to 0.4% by weight of free carbon, and the mixed powder is pressure-molded. The resulting molded article is heated to a temperature of 1,850.degree. C. to 2,500.degree. C. till there is obtained a sintered body having at least 90% relative density of silicon carbide. Thus, the sintered body having thermal conductivity of at least 0.4 cal/cm.sec..degree. C. at 25.degree. C., electrical resistivity of at least 10.sup.7 Ohm.cm at 25.degree. C. and coefficient of thermal expansion of 3.3.about.4.times.10.sup.-6 /.degree.C. at 25.degree. C. to 300.degree. C. can be obtained.
    Type: Grant
    Filed: November 5, 1980
    Date of Patent: January 25, 1983
    Assignee: Hitachi, Ltd.
    Inventors: Yasuo Matsushita, Yukio Takeda, Kousuke Nakamura, Tokio Okoshi
  • Patent number: 4065971
    Abstract: A semiconductor pressure transducer includes a monocrystalline semiconductor diaphragm, the outer edges of which are fixed. When subjected to pressure, the transducer produces radial strains of opposite polarity in a central portion thereof and a portion surrounding the central portion close to the edge of the strain inducing region. The diaphragm contains a plurality of elongated resistances formed of semiconductor material of the same conductivity type which are electrically isolated from the diaphragm, per se. Resistances of an individual set which lie in proximity to one another are combined in the form of a bridge. The longitudinal direction of resistances forming one set of opposing arms of the bridge extend along axes of the same crystal system as the longitudinal direction of the elongated resistances forming the other set of opposing arms of the bridge.
    Type: Grant
    Filed: July 1, 1976
    Date of Patent: January 3, 1978
    Assignee: Hitachi, Ltd.
    Inventors: Michitaka Shimazoe, Kousuke Nakamura, Yasuo Matsushita, Satoshi Shimada, Kazuji Yamada, Yukio Takahashi