Abstract: A semiconductor integrated circuit device has two semiconductor integrated circuit chips (20 and 30) respectively provided with a plurality of PADs (40a–40e, 41a–41e and 42a–42d), a plurality of LEADs (50a–50d) disposed around arrays of the semiconductor integrated circuit chips, and a plurality of bonding wires (60a–60e and 61a–61d). The plurality of bonding wires are connected so as not to straddle one semiconductor integrated circuit chip (30) and allow wiring between the PADs (40a–40e) of the other semiconductor integrated circuit chip (20) and the LEADs (50a–50d).

Abstract: A semiconductor integrated circuit device has two semiconductor integrated circuit chips (20 and 30) respectively provided with a plurality of PADs (40a-40e, 41a-41e and 42a-42d), a plurality of LEADs (50a-50d) disposed around arrays of the semiconductor integrated circuit chips, and a plurality of bonding wires (60a-60e and 61a-61d). The plurality of bonding wires are connected so as not to straddle one semiconductor integrated circuit chip (30) and allow wiring between the PADs (40a-40e) of the other semiconductor integrated circuit chip (20) and the LEADs (50a-50d).

Abstract: In a microcomputer equipped with a built-in temperature sensor, diodes as a temperature sensor are incorporated in a pair of circuit blocks, respectively, and placed in opposite polarity connection to each other. When detecting a temperature of the microcomputer, a constant current If is supplied to the diodes through terminals commonly connected to both the diodes. A voltage Vf generated at each diode is read through terminals located at more adjacent nodes to the diode when compared in position with the terminals.

Abstract: A semiconductor integrated circuit device has two semiconductor integrated circuit chips (20 and 30) respectively provided with a plurality of PADs (40a-40e, 41a-41e and 42a-42d), a plurality of LEADs (50a-50d) disposed around arrays of the semiconductor integrated circuit chips, and a plurality of bonding wires (60a-60e and 61a-61d). The plurality of bonding wires are connected so as not to straddle one semiconductor integrated circuit chip (30) and allow wiring between the PADs (40a-40e) of the other semiconductor integrated circuit chip (20) and the LEADs (50a-50d).

Abstract: A hotplug tolerant I/O circuit, which is incorporated in a first device, includes a voltage generator. In a hotplug mode, in which an input signal higher than the power supply voltage is applied from a second device to the first device while the power supply voltage is not applied to the first device, the voltage generator generates a control voltage from the input signal, and supplies it to a transistor in the hotplug tolerant I/O circuit. This makes it possible to solve a problem of a conventional hotplug tolerant I/O circuit in that the transistors in the I/O circuit can be damaged in the hotplug mode.

Abstract: There is constituted a logic circuit verification apparatus designed for checking a semiconductor integrated circuit including a core and a new circuit. The core has a internal circuit in which logic and timing have already been verified. The apparatus is provided with a section for extracting from the cells of the core timing cells which are required to be subjected to timing verification when the core is used in combination with the new circuit. The apparatus is also provided with a section for extracting from the cells of the core delay cells which are required to be subjected to time delay calculation when the core is used in combination with the new circuit. At the time of simulation, predetermined processing is performed solely with regard to the extracted cells.

Abstract: A logic verification apparatus for a semiconductor integrated circuit classifies a program described in HDL into connection information of a synchronous circuit portion and connection information of a asynchronous circuit portion, converts a portion of the connection information of the asynchronous circuit portion into the connection information of the synchronous circuit portion and increases circuit portions the function of which can be verified by a cycle based simulation/static timing verification unit, thus making it possible to shorten the time for verification.

Abstract: The invention relates to a method for applying a coating composition to a substrate with a reverse roller coater so as to form a thin film on the substrate and then for baking the thin film so as to transform the thin film into a metal oxide film. The coating composition comprises: 0.1-10 wt % of at least one organic metal compound on a metal oxide basis; and at least one organic solvent. The at least one organic metal compound is selected from the group consisting of metal alkoxides, metal acetyl-acetonates and metallic soaps. The coating composition is adjusted to have a viscosity within a range from 0.1 to 100 centipoises. In this method, a reverse roller of the coater is rotated at a rotation speed within a range from 2 to 55 m/min. and the substrate is moved at a moving speed within a range from 1 to 30 m/min. while the coating composition is applied to the substrate. Furthermore, the rotation speed of the reverse roller is adjusted to be higher than the moving speed of the substrate.

Abstract: An ink composition for forming a thin metal oxide film contains a glass component, a viscosity-increasing agent and a solvent. The glass component is one of a halogen-containing metal alkoxide, a mixture of the halogen-containing metal alkoxide and another metal alkoxide, and a mixture of the halogen-containing metal alkoxide and a metal oxide sol. The viscosity-increasing agent is nitrocellulose H60 according to Japanese Industrial Standard K6703. The solvent is at least one of ethylcarbitol and butylcarbitol. The formed thin metal oxide film is superior in transparency, abrasion resistance and scratch resistance.

Abstract: The invention relates to a sol-gel method for forming a metal oxide film, e.g. TiO.sub.2 film or TiO.sub.2 -SiO.sub.2 film, on a substrate by applying a solution of at least one metal alkoxide to the substrate to form a sol film on the substrate, drying the sol film to cause it to turn into a gel film by hydrolysis and baking the gel film. According to the invention the viscosity of the metal alkoxide solution is adequately increased, preferably to 3-30 cP at 20.degree. C., by the addition of a combination of a hydroxypropyl cellulose of which 2 wt % aqueous solution has a viscosity of 150-400 cP at 20.degree. C. and another hydroxypropyl cellulose of which 2 wt % aqueous solution has a viscosity of 6-10 cP at 20.degree. C. Metal oxide films formed by this method are free from minute cracks and excellent in optical characteristics and durability. By this method it is possible to form a metal oxide film as thick as about 300 nm without repeating the application of the alkoxide solution to the substrate.

Abstract: A method for producing cold rolled titanium strips having good surface quality. The cold rolling of a titanium strip is carried out under the conditions represented by the following formula:X.ltoreq.(48673/Y.sup.1.3283)where X is an average grain size (.mu.m) of the pre-cold rolled titanium strip and Y is a diameter (mm) of the roll for the cold rolling.

Abstract: In a process for heat treating titanium alloys, and .alpha.+.beta. titanium alloy, heated and held in a temperature range above 500.degree. C. and below the .alpha.+.beta./.beta. transformation point, and then quenched, is further aged at a low temperature in the range between 50.degree. and 300.degree. C.

Abstract: A titanium alloy having a high degree of internal friction and suitable for rotating blades of turbomachines is composed of 5.5 - 6.75% Al, 1 - 5% V, 1 - 5% Mo, V plus Mo being greater than or equal to 5%, and the balance Ti and usual impurities, all by weight. A method of heat-treating the alloy comprises maintaining the same at a temperature not lower than 125.degree. C below its .beta. transformation point for a predetermined period of time and then rapidly cooling the alloy.