Abstract: [Object] It is an object of the present invention to provide an aluminum alloy film having excellent bending resistance and heat resistance, and a thin film transistor including the aluminum alloy film. [Solving Means] In order to achieve the above-mentioned object, an aluminum alloy film according to an embodiment of the present invention includes: an Al pure metal that includes at least one type of a first additive element selected from the group consisting of Zr, Sc, Mo, Y, Nb, and Ti. A content of the first additive element is 0.01 atomic % or more and 1.0 atomic % or less. Such an aluminum alloy film has excellent bending resistance and excellent heat resistance. Further, also etching can be performed on the aluminum alloy film.

Abstract: [Object] It is an object of the present invention to provide an aluminum alloy film having excellent bending resistance and heat resistance, and a thin film transistor including the aluminum alloy film. [Solving Means] In order to achieve the above-mentioned object, an aluminum alloy film according to an embodiment of the present invention includes: an Al pure metal that includes at least one type of a first additive element selected from the group consisting of Zr, Sc, Mo, Y, Nb, and Ti. A content of the first additive element is 0.01 atomic % or more and 1.0 atomic % or less. Such an aluminum alloy film has excellent bending resistance and excellent heat resistance. Further, also etching can be performed on the aluminum alloy film.

Abstract: There is provided a Cu alloy target on a surface of a substrate made at least one of glass and resin produced by an adhering film alloy containing Cu and additive metals, the adhering film formed by sputtering. The additive metals include two or more of metals selected from the group consisting of Mg of 0.5 at % or more and 6 at % or less, Al of 1 at % or more and 15 at % or less, and Si of 0.5 at % or more and 10 at % or less. The adhering film has strong adhesive force that resists removal.

Abstract: [Object] It is an object of the present invention to provide an aluminum alloy target capable of forming an aluminum alloy film having excellent bending resistance and heat resistance, and a method of producing the aluminum alloy target. [Solving Means] In order to achieve the above-mentioned object, an aluminum alloy target according to an embodiment of the present invention includes: an Al pure metal that includes at least one type of a first additive element selected from the group consisting of Zr, Sc, Mo, Y, Nb, and Ti. A content of the first additive element is 0.01 atomic % or more and 1.0 atomic % or less. The aluminum alloy film formed using such an aluminum alloy target has excellent bending resistance and excellent heat resistance. Further, also etching can be performed on the aluminum alloy film.

Abstract: A wiring film capable of being patterned by a single etching process and has strong adhesion force to a resin substrate, and a semiconductor element and a display device that uses the wiring film, are disclosed. Since a base film that is in contact with a resin substrate is a copper thin film containing, at a predetermined ratio, aluminum as a main additive metal and silicon, titanium or nickel as a secondary additive metal, and has strong adhesion force to resins, wiring films (a gate electrode layer) do not separate from the resin substrate. Also, since the base film and a low resistance film contain a large amount of copper, the base film and the low resistance film may be etched together by means of an etchant or an etching gas by which copper is etched, therefore, the wiring films are able to be patterned by a single etching process.

Abstract: A technique is provided which prevents an increase in the resistivity of a conductive wiring film. A conductive layer containing Ca in a content rate of 0.3 atom % or more is provided on the surfaces of each of conductive wiring films which are to be exposed to a gas containing a Si atom in a chemical structure at a high temperature. When a gate insulating layer or a protection film containing Si is formed on the surface of the conductive layer, the Si atoms do not diffuse into the conductive layer and a resistance value does not increase, even if the conductive layer is exposed to the raw material gas containing Si in a chemical structure . Further, a CuCaO layer can be formed as an adhesive layer for preventing Si diffusion from a glass substrate or a silicon semiconductor.

Abstract: High-performance magnets are obtained by: housing metal evaporating materials (v) containing at least one of Dy and Tb and sintered magnets (S) inside a processing box; disposing the processing box inside a vacuum chamber; thereafter, heating the processing box to a predetermined temperature in a vacuum atmosphere to thereby evaporate the metal evaporating materials and cause them to be adhered to the sintered magnets. The metal atoms of the adhered Dy or Tb are diffused into grain boundaries and/or grain boundary phases of the sintered magnets. A method of manufacturing a permanent magnet is provided in which, even if the sintered magnets and the metal evaporating materials are disposed in close proximity to each other, the squareness of demagnetization curve is not impaired and in which high feasibility of mass production can be attained. While the metal evaporating materials are being evaporated, an inert gas is introduced into the processing chamber in which the sintered magnets are disposed.

Abstract: A titanium target assembly includes a titanium sputtering target, a copper or copper alloy backing plate and serving as a support member for the target and a silver or silver alloy coating film and formed between the target and backing plate. The coating film is formed on a surface subjected to cleaning treatment on the bonding side or sides of the target and backing plate by physical vapor deposition. The titanium target and backing plate are solid phase diffusion bonded. The face(s) serve as the bonding plane. The assembly can be manufactured by cleaning the surface(s) of the target and/or backing plate on bonding side(s), forming a coating film on the cleaned surface(s) on bonding side(s) and solid phase diffusion-bonding the target and backing plate, while using surface(s) provided with coated film as the bonding plane. The target assembly possesses high bonding strength and excellent bonding stability and reliability.

Abstract: A titanium target assembly comprises a sputtering target of titanium, a backing plate composed of copper or a copper alloy and serving as a support member for the target and a coating film composed of silver or a silver alloy and formed between the target and the backing plate, wherein the coating film is formed on the surface subjected to a cleaning treatment on the bonding side of the target or on the bonding sides of the target and the backing plate according to the physical vapor deposition technique and the titanium target and the backing plate are solid phase diffusion bonded, while the face(s) provided with the coating film serves as the bonding plane. The titanium target assembly can be manufactured by a method comprising the steps of cleaning the surface(s) of the target and/or the backing plate on the bonding side(s) thereof, forming a coating film on the cleaned surface(s) on the bonding side(s) and solid phase diffusion-bonding the target and the backing plate at a pressure of not more than 0.