Abstract: A semiconductor device manufacturing method includes forming a fin region over a substrate, forming a dummy gate electrode over the fin region, forming a first insulating film over the dummy gate electrode and the fin region, polishing the first insulating film until the dummy gate electrode is exposed, removing part of the exposed dummy gate electrode to form a trench, forming a gate insulator over the surface of the fin region exposed in the trench, and forming a gate electrode over the gate insulator.

Abstract: A semiconductor device manufacturing method includes forming a fin region over a substrate, forming a dummy gate electrode over the fin region, forming a first insulating film over the dummy gate electrode and the fin region, polishing the first insulating film until the dummy gate electrode is exposed, removing part of the exposed dummy gate electrode to form a trench, forming a gate insulator over the surface of the fin region exposed in the trench, and forming a gate electrode over the gate insulator.

Abstract: A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in the vicinity of the first diffusion region, a second region located in the vicinity of the second diffusion region, and a third region located between the first and second regions, wherein the first, second and third regions carry respective, mutually independent polarizations.

Abstract: A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in the vicinity of the first diffusion region, a second region located in the vicinity of the second diffusion region, and a third region located between the first and second regions, wherein the first, second and third regions carry respective, mutually independent polarizations.

Abstract: A non-volatile semiconductor memory device comprise a source region 44 and a drain region 46 formed in a semiconductor substrate 30; a gate electrode 36 formed on the semiconductor substrate between the source region and the drain region with a first insulation film 32 formed between the gate electrode and the semiconductor substrate; and a charge accumulation region 42a, 42b of a dielectric material, which is formed on at least either of the side wall of the gate electrode on the side of the source region and the side wall of the gate electrode on the side of the drain region. Accordingly, charges accumulated on the side of the source region 44 and the charges accumulated on the side of the drain region 46 can be easily spatially isolated from each other.

Abstract: Several ten thousands or several millions of juxtaposed hollow thin tubes, each having a diameter of, for example, 12 .mu.m and a length of 1 mm, are joined to each other to form a window having a predetermined open surface area. The window having a diameter of, for example, 30 mm, can withstand a differential pressure of several atm. A high-vacuum X-ray source and the window consisting of thin tubes having the aforementioned dimensions are connected through a differential evacuating device having a plurality of stages connected with a partitioning wall having an orifice of predetermined dimensions provided between the adjacent stages. The pressures at the two sides of the window are maintained to the atmospheric pressure and a pressure which is 1/10th of the atmospheric pressure, respectively. X-rays having a long wavelength of 10 .ANG.

Abstract: A gettering treatment process comprises the step of irradiating an ultraviolet light onto an insulating layer (a silicon oxide thin layer formed by thermally oxidizing silicon), in a chlorine-containing gas atmosphere. The ultraviolet light excites and dissociates the chlorine-containing gas thereby to generate chlorine radicals which uniformly penetrate the insulating layer, and serve to trap metal impurities within the silicon oxide thin layer.