Abstract: A solar cell sealing material of the present invention is a solar cell sealing material that is used to seal a solar cell element and includes an ethylene.?-olefin copolymer, an organic peroxide (A) having a one-hour half-life temperature in a range of equal to or higher than 100° C. and equal to or lower than 130° C., and an organic peroxide (B) having a one-hour half-life temperature in a range of higher than 130° C. and equal to or lower than 160° C., and a ratio (X2/X1) of a content X2 of the organic peroxide (B) to a content X1 of the organic peroxide (A) in the solar cell sealing material is equal to or more than 0.05 and equal to or less than 1.10.

Abstract: A solar cell sealing material of the present invention is a solar cell sealing material that is used to seal a solar cell element and includes an ethylene.?-olefin copolymer, an organic peroxide (A) having a one-hour half-life temperature in a range of equal to or higher than 100° C. and equal to or lower than 130° C., and an organic peroxide (B) having a one-hour half-life temperature in a range of higher than 130° C. and equal to or lower than 160° C., and a ratio (X2/X1) of a content X2 of the organic peroxide (B) to a content X1 of the organic peroxide (A) in the solar cell sealing material is equal to or more than 0.05 and equal to or less than 1.10.

Abstract: A semiconductor laser device includes a layer structure of a first conductive cladding layer, an active layer, and a second conductive cladding layer sequentially grown on a first conductive semiconductor substrate; and a light emitting facet from which a laser beam having a first wavelength is emitted. Refractive indexes of the first and the second conductive cladding layers with respect to the first wavelength are lower than an effective refractive index with respect to the first wavelength. With respect to a light having a second wavelength incident on the light emitting facet from outside, the refractive index of at least one of the first and the second conductive cladding layers is equal to or higher than the effective refractive index with respect to the second wavelength.

Abstract: A semiconductor laser device includes a layer structure of a first conductive cladding layer, an active layer, and a second conductive cladding layer sequentially grown on a first conductive semiconductor substrate; and a light emitting facet from which a laser beam having a first wavelength is emitted. Refractive indexes of the first and the second conductive cladding layers with respect to the first wavelength are lower than an effective refractive index with respect to the first wavelength. With respect to a light having a second wavelength incident on the light emitting facet from outside, the refractive index of at least one of the first and the second conductive cladding layers is equal to or higher than the effective refractive index with respect to the second wavelength.

Abstract: On a substrate of n-type GaAs are sequentially formed an n-type cladding layer (AlGaAs, Al content x=0.07, thickness t=2.86 &mgr;m), an n-type optical waveguide layer (GaAs, t=0.49 &mgr;m), an n-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), an active layer (composed of an In0.18Ga0.82As quantum well layer and a GaAs barrier layer), a p-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), a p-type optical waveguide layer (GaAs, t=0.49 &mgr;m), a p-type cladding layer (AlGaAs, x=0.20, t=1.08 &mgr;m), and a p-type cap layer (GaAs) in which a pair of n-type current blocking layers (GaAs) are buried. With this construction, the occurrence of a wavelength spit due to a higher-order mode can be inhibited thereby stabilizing a higher power operation.

Abstract: A semiconductor laser device includes: an active layer; upper waveguide layers and a lower waveguide layer sandwiching the active layer therebetween; upper and lower cladding layers sandwiching the active layer and the upper and lower waveguide layers therebetween; and a current-narrowing layer defining a current-injection region for injecting current to the active layer, wherein a diffraction grating having a periodical structure in a resonance cavity direction is buried in any one of the waveguide layers, the diffraction grating being present in at least a part of the current-injection region; and the waveguide layer in which the diffraction grating is buried and the cladding layer adjoining to that waveguide layer forms an interface which is substantially flat in the resonance cavity direction.

Abstract: Optical guide layers are formed on both faces of the active layer, respectively, which optical guide layers have a band gap wider than that of the active layer, an n-type cladding layer and a p-type cladding layer respectively formed so as to sandwich the active layer and the optical guide layers therebetween, which cladding layers have a band gap wider than those of the optical guide layers, and carrier blocking layers are respectively formed between the active layer and the optical guide layers, which carrier blocking layers have a band gap wider than those of the active layer and the optical guide layers. The refractive index of the p-type cladding layer is lower than that of the n-type cladding layer. With such constitution inner losses are limited to a low level, as free carrier absorption is reduced, and the electric and thermal resistances of a semiconductor laser device are reduced, with the result that the laser device is enhanced in efficiency and output power.

Abstract: A semiconductor laser light source includes: a semiconductor laser array which emits laser beams whose polarization planes are parallel to each other and whose divergent angles .theta.z and .theta.x in two orthogonal directions satisfy an inequality .theta.z>.theta.x; a cylindrical lens which converges the laser beams emitted from the semiconductor laser array in a direction that decreases the divergent angle .theta.z; a wave plate which controls the direction of polarization so that the polarization planes of the laser beams having passed through the cylindrical lens are at 90 degrees to each other; a birefringent optical element which merges by the birefringent effect the optical paths of the laser beams having passed through the wave plate; and a light emitting surface which converges the laser beams merged by the birefringent optical element in a direction that decreases the divergent angle .theta.x.

Abstract: A laser light, whose wavelength is to be measured, is introduced into an etalon, a concentric circular interference stripe derived from the etalon is irradiated onto a one-dimensional photodetector array and a diameter of the interference stripe is measured to measure the wavelength of the laser light. Alternatively, if a reference laser light of known wavelength is introduced into the etalon, as described above, a wavelength measurement of extremely high accuracy can be made without being affected by positional deviations of the optical system.

Abstract: A discharge exciting excimer laser device comprises a pair of main discharge electrodes, a dielectric and an auxiliary electrode. The dielectric is in a cylindrical form and has a side opposed to one of the main discharge electrodes, which side is formed into a flat plate-like portion. The auxiliary electrode is embraced within the dielectric leaving a space and is opposed to one of the main discharge electrodes with the flat plate-like portion of the dielectric sandwiched therebetween. Such a construction increases laser output and improves insulating performance.

Abstract: Angles of inclination of the two wavelength selection elements arranged on an optical path of a laser beam source are varied to make a laser output variable. Light transmitting ranges of the two wavelength selection elements are coincided with each other so as to adjust the light wavelength bands, thereby the laser beam is narrowed without increasing its fineness.

Abstract: A gas laser apparatus having transparent laser windows provided on a laser chamber body, in which operating gases is sealed if necessary, comprising circulation means connected to the laser chamber body through an intake port and a discharge port for circulating gases within the laser chamber body and filtration means disposed in said circulation means, further comprising cutoff means for preventing the laser windows from being stained and open and closeably cutting off between the laser chamber body and the laser windows, and having a construction wherein in replacing the laser window, the cutoff means is once placed in a cutoff state, and the laser window is separated from the laser chamber body to place the laser window.

Abstract: This invention is provided with a wavelength selecting means for uses in selectively receiving beam in compliance with each of a reference beam and a measured beam in order to simplify a correction or comparison of oscillating wavelengths in the laser device and further to improve a reliability and a controlling responsive speed.