Patents by Inventor Yasuo Ohgoshi
Yasuo Ohgoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11004658Abstract: In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on-state of the time-modulated second radio-frequency power until an end of the on-state and maintains a matching state attained during the sampling effective period from after the end of the on-state until a next sampling effective period.Type: GrantFiled: July 31, 2018Date of Patent: May 11, 2021Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Michikazu Morimoto, Naoki Yasui, Yasuo Ohgoshi
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Patent number: 10727088Abstract: The present invention provides a plasma processing apparatus having a radio frequency power supply supplying time-modulated radio frequency power which is controllable widely with high precision, and a plasma processing method using the plasma processing apparatus. The plasma processing apparatus includes: a vacuum chamber; a first radio frequency power supply for generating plasma in the vacuum chamber; a sample holder disposed in the vacuum chamber, on which a sample is placed; and a second radio frequency power supply supplying radio frequency power to the sample holder, wherein at least one of the first radio frequency power supply and the second radio frequency power supply supplies time-modulated radio frequency power, one of parameters of controlling the time-modulation has two or more different control ranges, and one of the control ranges is a control range for a high-precision control.Type: GrantFiled: October 4, 2016Date of Patent: July 28, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Michikazu Morimoto, Yasuo Ohgoshi, Yuuzou Oohirabaru, Tetsuo Ono
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Patent number: 10559481Abstract: Provided are a plasma processing apparatus with a radio-frequency power supply supplying temporally modulated intermittent radio-frequency power which can be controlled with high precision in a wide repetition frequency band, and a plasma processing method using the plasma processing apparatus. A plasma processing apparatus includes: a vacuum vessel; a plasma generating section plasma in the vacuum vessel; a stage installed in the vacuum vessel and mounted with a sample; and a radio-frequency power supply applying temporally modulated intermittent radio-frequency power to the stage, wherein the radio-frequency power supply has two or more different frequency bands and temporally modulates the radio-frequency power by a repetition frequency which has the same range of analog signals used in each of the frequency band.Type: GrantFiled: February 29, 2016Date of Patent: February 11, 2020Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Michikazu Morimoto, Yasuo Ohgoshi, Yuuzou Oohirabaru, Tetsuo Ono
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Patent number: 10522331Abstract: A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.Type: GrantFiled: October 25, 2016Date of Patent: December 31, 2019Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yasuo Ohgoshi, Michikazu Morimoto, Yuuzou Oohirabaru, Tetsuo Ono
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Patent number: 10192718Abstract: In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on-state of the time-modulated second radio-frequency power until an and of the on-state and maintains a matching state attained during the sampling effective period from after the end of the on-state until a next sampling effective period.Type: GrantFiled: April 19, 2016Date of Patent: January 29, 2019Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Michikazu Morimoto, Naoki Yasui, Yasuo Ohgoshi
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Publication number: 20180337022Abstract: In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on-state of the time-modulated second radio-frequency power until an end of the on-state and maintains a matching state attained during the sampling effective period from after the end of the on-state until a next sampling effective period.Type: ApplicationFiled: July 31, 2018Publication date: November 22, 2018Inventors: Michikazu MORIMOTO, Naoki YASUI, Yasuo OHGOSHI
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Patent number: 10121640Abstract: The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses.Type: GrantFiled: January 22, 2015Date of Patent: November 6, 2018Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Satoru Muto, Tetsuo Ono, Yasuo Ohgoshi, Hirofumi Eitoku
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Publication number: 20170040143Abstract: A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.Type: ApplicationFiled: October 25, 2016Publication date: February 9, 2017Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yasuo Ohgoshi, Michikazu Morimoto, Yuuzou Oohirabaru, Tetsuo Ono
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Publication number: 20170025289Abstract: The present invention provides a plasma processing apparatus having a radio frequency power supply supplying time-modulated radio frequency power which is controllable widely with high precision, and a plasma processing method using the plasma processing apparatus. The plasma processing apparatus includes: a vacuum chamber; a first radio frequency power supply for generating plasma in the vacuum chamber; a sample holder disposed in the vacuum chamber, on which a sample is placed; and a second radio frequency power supply supplying radio frequency power to the sample holder, wherein at least one of the first radio frequency power supply and the second radio frequency power supply supplies time-modulated radio frequency power, one of parameters of controlling the time-modulation has two or more different control ranges, and one of the control ranges is a control range for a high-precision control.Type: ApplicationFiled: October 4, 2016Publication date: January 26, 2017Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Michikazu Morimoto, Yasuo Ohgoshi, Yuuzou Oohirabaru, Tetsuo Ono
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Patent number: 9514967Abstract: A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.Type: GrantFiled: January 16, 2013Date of Patent: December 6, 2016Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yasuo Ohgoshi, Michikazu Morimoto, Yuuzou Oohirabaru, Tetsuo Ono
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Patent number: 9502217Abstract: A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.Type: GrantFiled: January 30, 2015Date of Patent: November 22, 2016Assignee: Hitachi High-Technologies CorporationInventors: Shunsuke Kanazawa, Naoki Yasui, Michikazu Morimoto, Yasuo Ohgoshi
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Publication number: 20160233057Abstract: In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on state of the time-modulated second radio-frequency power until an and of the on-state and maintains a matching state attained during the sampling effective period from after the end of the so-state until a next sampling effective period.Type: ApplicationFiled: April 19, 2016Publication date: August 11, 2016Inventors: Michikazu MORIMOTO, Naoki YASUI, Yasuo OHGOSHI
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Publication number: 20160181131Abstract: Provided are a plasma processing apparatus with a radio-frequency power supply supplying temporally modulated intermittent radio-frequency power which can be controlled with high precision in a wide repetition frequency band, and a plasma processing method using the plasma processing apparatus. A plasma processing apparatus includes: a vacuum vessel; a plasma generating section plasma in the vacuum vessel; a stage installed in the vacuum vessel and mounted with a sample; and a radio-frequency power supply applying temporally modulated intermittent radio-frequency power to the stage, wherein the radio-frequency power supply has two or more different frequency bands and temporally modulates the radio-frequency power by a repetition frequency which has the same range of analog signals used in each of the frequency band.Type: ApplicationFiled: February 29, 2016Publication date: June 23, 2016Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Michikazu Morimoto, Yasuo Ohgoshi, Yuuzou Oohirabaru, Tetsuo Ono
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Patent number: 9336999Abstract: In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on-state of the time-modulated second radio-frequency power until an end of the on-state and maintains a matching state attained during the sampling effective period from after the end of the on-state until a next sampling effective period.Type: GrantFiled: February 19, 2014Date of Patent: May 10, 2016Assignee: Hitachi High-Technologies CorporationInventors: Michikazu Morimoto, Naoki Yasui, Yasuo Ohgoshi
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Patent number: 9305803Abstract: Provided are a plasma processing apparatus with a radio-frequency power supply supplying temporally modulated intermittent radio-frequency power which can be controlled with high precision in a wide repetition frequency band, and a plasma processing method using the plasma processing apparatus. A plasma processing apparatus includes: a vacuum vessel; a plasma generating section plasma in the vacuum vessel; a stage installed in the vacuum vessel and mounted with a sample; and a radio-frequency power supply applying temporally modulated intermittent radio-frequency power to the stage, wherein the radio-frequency power supply has two or more different frequency bands and temporally modulates the radio-frequency power by a repetition frequency which has the same range of analog signals used in each of the frequency band.Type: GrantFiled: July 19, 2011Date of Patent: April 5, 2016Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Michikazu Morimoto, Yasuo Ohgoshi, Yuuzou Oohirabaru, Tetsuo Ono
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Publication number: 20150170886Abstract: In a plasma processing apparatus having a plasma processing chamber for applying plasma processing to a sample, a first radio frequency power supply for supplying first radio frequency power for generation of a plasma, a sample stage for mounting the sample thereon, a second radio frequency power supply for supplying second radio frequency power to the sample stage, and a pulse-generating unit for sending to the first radio frequency power supply a first pulse for time modulation of the first radio frequency power and for sending to the second radio frequency power supply a second pulse for time modulation of the second radio frequency power, the pulse-generating unit includes a phase control waveform generation unit for generating a phase modulation-use waveform for modulating the phase of ON period of the second pulse and modulates by the phase modulation-use waveform the phase of ON period of the second pulse.Type: ApplicationFiled: July 31, 2014Publication date: June 18, 2015Inventors: Michikazu MORIMOTO, Naoki YASUI, Shunsuke KANAZAWA, Yasuo OHGOSHI
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Publication number: 20150170880Abstract: The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses.Type: ApplicationFiled: January 22, 2015Publication date: June 18, 2015Inventors: Satoru MUTO, Tetsuo ONO, Yasuo OHGOSHI, Hirofumi EITOKU
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Publication number: 20150144594Abstract: A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.Type: ApplicationFiled: January 30, 2015Publication date: May 28, 2015Inventors: Shunsuke Kanazawa, Naoki Yasui, Michikazu Morimoto, Yasuo Ohgoshi
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Patent number: 8992724Abstract: A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.Type: GrantFiled: January 25, 2013Date of Patent: March 31, 2015Assignee: Hitachi High-Technologies CorporationInventors: Shunsuke Kanazawa, Naoki Yasui, Michikazu Morimoto, Yasuo Ohgoshi
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Patent number: 8969211Abstract: The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses.Type: GrantFiled: August 7, 2013Date of Patent: March 3, 2015Assignee: Hitachi High-Technologies CorporationInventors: Satoru Muto, Tetsuo Ono, Yasuo Ohgoshi, Hirofumi Eitoku