Abstract: A crystal silicon film forming method according to the present invention includes: forming a metal film; forming an insulating film on the metal film, and forming a crystal silicon film made of polycrystal Si on the insulating film. In the forming of an insulating film, the insulating film is formed within a film thickness range of 160 nm to 190 nm. The forming of a crystal silicon film includes forming an amorphous silicon film made of a-Si on the insulating film, within a film thickness range of 30 nm to 45 nm, and forming the crystal silicon film from the amorphous silicon film by irradiating the amorphous silicon film with a light of a green laser.

Abstract: An organic EL device (OELD) having a defective portion is irradiated with a laser beam; first luminance of light emitted from the OELD is measured after the OELD is irradiated with the laser beam, while supplying, to the OELD, a first amount of current with which the OELD in a normal state would emit light having luminance corresponding to a first grayscale level smaller than a reference level; the OELD is re-irradiated with the laser beam when the first luminance is smaller than a threshold; and second luminance of light emitted from the OELD is measured when the first luminance is greater than or equal to the threshold, while supplying, to the OELD, a second amount of current with which the OELD in the normal state would emit light having luminance corresponding to a second grayscale level greater than or equal to the reference level.

Abstract: A method of manufacturing an organic electroluminescence display includes preparing a substrate including pixels. The pixels each include a drive transistor and a capacitor. The capacitor of a subject pixel is caused to hold a voltage which corresponds to a threshold voltage of the drive transistor, and the voltage is read. A first signal voltage is obtained by adding a first correction parameter of the subject pixel to a second signal voltage corresponding to a single gradation level belonging to an intermediate gradation region or a high gradation region of representative voltage-luminance characteristics. The first signal voltage is applied to the driver of the subject pixel, and a luminance emitted by the subject pixel is measured. A second correction parameter with which the luminance emitted by the subject pixel becomes a standard luminance is calculated.

Abstract: A method for manufacturing an organic electroluminescence device includes: preparing the organic electroluminescence device that includes a lower electrode, an organic layer including a light-emitting layer and formed on the lower electrode, an upper electrode formed on the organic layer, and an encapsulating layer formed on the upper electrode, and has a part in which the lower electrode and the upper electrode are shorted; and forming a mixed layer in which a constituent material of the upper electrode and at least one of constituent materials of the organic layer and the thin-film encapsulating layer which are adjacent to the upper electrode are mixed, by irradiating at least one of the shorted part and a region around the shorted part with an ultrashort pulse laser.

Abstract: A method of manufacturing an organic EL device includes: irradiating a light-emitting region of the organic EL device which includes a defective portion with a laser beam under a first irradiation condition; observing a state of an irradiation mark formed in the light-emitting region through the irradiation with the laser beam in the irradiating under a first irradiation condition; determining a second irradiation condition for resolving a defect caused by the defective portion, based on the first irradiation condition and the observed state of the irradiation mark; and irradiating the light-emitting region with a laser beam under the second irradiation condition determined in the determining of a second irradiation condition.

Abstract: A method for fabricating an organic electroluminescence device according to the present invention includes: preparing an organic electroluminescence device having a lower electrode, an organic layer including an emitting layer, an upper electrode, and a shorted part in which the lower electrode and the upper electrode are shorted; and irradiating a part surrounding the shorted part in which the lower electrode and the upper electrode are shorted to alter a material composing the lower electrode or the upper electrode and to form a space between the lower electrode and the upper electrode in a region corresponding to a region surrounded by an altered part.

Abstract: In the light-emitting display device according to the present invention, a side-contact structure is adopted in order to secure a TFT characteristic in a linear region (on-current). In a TFT configuring a switching transistor, a thickness of a semiconductor layer (channel layer) in a region corresponding to the source/drain electrodes is increased. In contrast, in a TFT configuring a driving transistor, in order to maintain an on current, a thickness of a semiconductor layer (channel layer) in a region corresponding to the source/drain electrodes is reduced. This configuration is manufactured using a half-tone mask. With this, it is possible to suppress the off-current in the switching transistor, while securing the on-current in the driving transistor.

Abstract: A liquid crystal display device includes a substrate, an insulating layer, an upper electrode layer, and a lower electrode layer. The upper electrode layer and the lower electrode layer are formed on the same the substrate via the insulating layer. A plurality of openings are formed in the upper electrode layer and arranged parallel to each other so that an electric field is passed therethrough. Liquid crystal molecules are driven by applying voltage between the upper electrode layer and the lower electrode layer. A minor axis of each of the openings has a width in a range in which a V-T curve, which represents a relationship between voltage and transmittance ratio, does not shift with variation in the width of the minor axis.

Abstract: A method of manufacturing an organic electroluminescence device includes: preparing an organic EL device in which an anode, an organic layer including a luminescent layer, and a cathode formed of a transparent material are stacked in order and which has a shorted defective portion; irradiating the organic EL device with a laser beam from a direction of the cathode; measuring an intensity of radiated light from the organic EL device after the laser beam is absorbed through multiphoton absorption; changing a focal position of the laser beam in a stacking direction for performing the irradiating and measuring, and subsequently determining the focal position of the laser beam in the stacking direction such that the intensity of the radiated light is minimal; and irradiating the determined focal position with the laser beam, so as to solve a defect caused by the shorted defective portion.

Abstract: This invention offers a liquid crystal display device according to FFS technology. A pixel electrode is formed of a first layer transparent electrode. A common electrode made of a second layer transparent electrode is formed above the pixel electrode interposing an insulation film between them. The common electrode in an upper layer is provided with a plurality of slits. The common electrode extends over all the pixels in a display region. An end of the common electrode is disposed on a periphery of the display region and connected with a peripheral common electric potential line that provides a common electric potential Ycom. There is provided neither an auxiliary common electrode line nor a pad electrode, both of which are provided in a liquid crystal display device according to a conventional art.

Abstract: A method of manufacturing an organic electroluminescence device includes: preparing an organic EL device in which an anode, an organic layer including a luminescent layer, and a cathode formed of a transparent material are stacked in order and which has a shorted defective portion; irradiating the organic EL device with a laser beam from a direction of the cathode; measuring an intensity of radiated light from the organic EL device after the laser beam is absorbed through multiphoton absorption; changing a focal position of the laser beam in a stacking direction for performing the irradiating and measuring, and subsequently determining the focal position of the laser beam in the stacking direction such that the intensity of the radiated light is minimal; and irradiating the determined focal position with the laser beam, so as to solve a defect caused by the shorted defective portion.

Abstract: A crystal silicon film forming method according to the present invention includes: forming a metal film; forming an insulating film on the metal film, and forming a crystal silicon film made of polycrystal Si on the insulating film. In the forming of an insulating film, the insulating film is formed within a film thickness range of 160 nm to 190 nm. The forming of a crystal silicon film includes forming an amorphous silicon film made of a-Si on the insulating film, within a film thickness range of 30 nm to 45 nm, and forming the crystal silicon film from the amorphous silicon film by irradiating the amorphous silicon film with a light of a green laser.

Abstract: An organic electroluminescence display device includes a display panel including pixels. The pixels each include a light-emitter, driver and capacitor. A storage is configured to store a correction parameter for each of the pixels for correcting, in accordance with characteristics of each of the pixels, an image signal input from an external source. A controller is configured to, for each pixel of the pixels, obtain a corrected signal voltage by reading the correction parameter corresponding to the pixel from the storage and multiplying the image signal corresponding to the pixel by the correction parameter corresponding to the pixel. The storage is configured to store a gain and not an offset as the correction parameter.

Abstract: A method of manufacturing an organic electroluminescence display includes preparing a substrate including pixels. The pixels each include a drive transistor and a capacitor. The capacitor of a subject pixel is caused to hold a voltage which corresponds to a threshold voltage of the drive transistor, and the voltage is read. A first signal voltage is obtained by adding a first correction parameter of the subject pixel to a second signal voltage corresponding to a single gradation level belonging to an intermediate gradation region or a high gradation region of representative voltage-luminance characteristics. The first signal voltage is applied to the driver of the subject pixel, and a luminance emitted by the subject pixel is measured. A second correction parameter with which the luminance emitted by the subject pixel becomes a standard luminance is calculated.

Abstract: In the light-emitting display device according to the present invention, a side-contact structure is adopted in order to secure a TFT characteristic in a linear region (on-current). In a TFT configuring a switching transistor, a thickness of a semiconductor layer (channel layer) in a region corresponding to the source/drain electrodes is increased. In contrast, in a TFT configuring a driving transistor, in order to maintain an on current, a thickness of a semiconductor layer (channel layer) in a region corresponding to the source/drain electrodes is reduced. This configuration is manufactured using a half-tone mask. With this, it is possible to suppress the off-current in the switching transistor, while securing the on-current in the driving transistor.

Abstract: The invention is directed to reduction of a leak current of a TFT of a pixel caused by light from a backlight or external light to improve a display quality of a liquid crystal display device. The display device of the invention includes a plurality of pixels on a first substrate, where each of the pixels includes a gate line intersecting a semiconductor layer with a gate insulation film interposed therebetween, a drain line connected to a drain region through a first contact hole and covering an upper side of the semiconductor layer extending from an intersection, and a source electrode connected to a source region through a second contact hole and covering an upper side of the semiconductor layer extending from an intersection. The device further includes a light shield layer formed under the semiconductor layer with a buffer film interposed therebetween and shielding the semiconductor layer from light.

Abstract: A liquid crystal display device includes a first substrate having a first electrode and a second electrode, a second substrate, a liquid crystal interposed between the first substrate and the second substrate, pixels each having a transmissive portion for performing a transmissive display and a reflective portion for performing a reflective display, and a driving circuit driving the pixels. Here, a third electrode is disposed in the second substrate opposed to the first substrate with the liquid crystal interposed therebetween. The first electrode is disposed in the transmissive portion along with the second electrode and is also disposed in the reflective portion along with the third electrode. The driving circuit is provided to independently apply potentials to the second electrode and the third electrode.

Abstract: Transmittance and contrast of a liquid crystal display device according to FFS method are improved. A plurality of picture elements, each made of an R pixel, a G pixel and a B pixel, is disposed in a matrix form. In each of the pixels, a gate signal line extends in a left to right direction and a display signal line extends in a top to bottom direction so as to cross the gate line. A thin film transistor for pixel selection is disposed around an intersection of the gate line and the display signal line. There is provided a pixel electrode connected with the thin film transistor. A common electrode is provided on the pixel electrode through an insulation film. A plurality of slits having edges at borders between the picture elements is disposed in the common electrode to cross each of the picture elements in the left to right direction.

Abstract: A liquid crystal display includes a liquid crystal disposed between a first transparent substrate and a second transparent substrate, a first electrode and second electrode which overlie the first transparent substrate and which are used to drive the liquid crystal, one or more layers overlying the first electrode, and one or more layers overlying the second electrode. The correlation between layers disposed between the first electrode and the liquid crystal agrees with the correlation between layers disposed between the second electrode and the liquid crystal.

Abstract: A liquid crystal display device includes a substrate, an insulating layer, an upper electrode layer, and a lower electrode layer. The upper electrode layer and the lower electrode layer are formed on the same the substrate via the insulating layer. A plurality of openings are formed in the upper electrode layer and arranged parallel to each other so that an electric field is passed therethrough. Liquid crystal molecules are driven by applying voltage between the upper electrode layer and the lower electrode layer. A minor axis of each of the openings has a width in a range in which a V-T curve, which represents a relationship between voltage and transmittance ratio, does not shift with variation in the width of the minor axis.