Abstract: An apparatus for growing a nitride semiconductor crystal film, comprises a chamber that can control inside temperature and air pressure, a susceptor supported by a rotating shaft inside the chamber and on which a growth substrate is placed, a reactant gas supplier that emits reactant gas to the growth substrate in parallel to a surface of the growth substrate, a first subflow gas supplier that emits first subflow gas for pressing the reactant gas down to the surface of the growth substrate at an inclination angle of 45 to 90 degrees in a same in-plane direction as the reactant gas, a second subflow gas supplier that emits second subflow gas for removing the reactant gas from an periphery of the growth substrate to the surface at an inclination angle of 45 to 90 degrees, and an exhaust device that exhausts gas from the chamber.

Abstract: An apparatus for growing a nitride semiconductor crystal film, comprises a chamber that can control inside temperature and air pressure, a susceptor supported by a rotating shaft inside the chamber and on which a growth substrate is placed, a reactant gas supplier that emits reactant gas to the growth substrate in parallel to a surface of the growth substrate, a first subflow gas supplier that emits first subflow gas for pressing the reactant gas down to the surface of the growth substrate at an inclination angle of 45 to 90 degrees in a same in-plane direction as the reactant gas, a second subflow gas supplier that emits second subflow gas for removing the reactant gas from an periphery of the growth substrate to the surface at an inclination angle of 45 to 90 degrees, and an exhaust device that exhausts gas from the chamber.

Abstract: In conventional organic EL display elements of this type, unevenness of brightness surely occurs at high temperatures. These conventional organic elements cannot be used in, for example, display devices to be mounted on vehicles, giving rise to the problem of inferior generalities. An organic EL display element 1 according to the present invention comprises a stress relaxation layer on a cathode after the cathode is formed, the stress relaxation layer being a film which exhibits tensile stress when the film stress of the cathode is compressive stress or exhibits compressive stress when the film stress of the cathode is tensile stress. This structure allows the organic EL display element to prevent the occurrence of unevenness of brightness caused by the film stress of the cathode to solve the problem and makes it possible to give generalities to organic EL display elements of this type.

Abstract: In conventional organic EL display elements of this type, unevenness of brightness surely occurs at high temperatures. These conventional organic elements cannot be used in, for example, display devices to be mounted on vehicles, giving rise to the problem of inferior generalities. An organic EL display element 1 according to the present invention comprises a stress relaxation layer on a cathode after the cathode is formed, the stress relaxation layer being a film which exhibits tensile stress when the film stress of the cathode is compressive stress or exhibits compressive stress when the film stress of the cathode is tensile stress. This structure allows the organic EL display element to prevent the occurrence of unevenness of brightness caused by the film stress of the cathode to solve the problem and makes it possible to give generalities to organic EL display elements of this type.