Abstract: A liquid crystal display device includes a first substrate and a second substrate disposed to face each other, a polymer-dispersed liquid crystal layer provided between the first substrate and the second substrate, and a black matrix provided on the first substrate, where a display region for displaying an image and a frame region around the display region are defined, and in the frame region, the black matrix includes a plurality of light-blocking regions spaced apart from one another.

Abstract: An ultraviolet-absorbing layer is provided between an insulating substrate and a transparent electrode, the ultraviolet-absorbing layer having a transmittance ratio (T (365 nm)/T (315 nm)) of not less than 6.3 where (T (365 nm)) is a transmittance at a wavelength of 365 nm and (T (315 nm)) is a transmittance at a wavelength of 315 nm.

Abstract: A reflective display device includes a retroreflective layer 10 with unit structures arranged two-dimensionally on a virtual plane, and conducts a display operation by using light reflected from the retroreflective layer. The device further includes: gate lines 35 arranged on a rear substrate 32; source lines 34 also arranged on the rear substrate 32 to cross the gate lines 35 as viewed from over a front substrate 30; a switching element 33 also arranged on the rear substrate 32 and activated in response to a signal supplied to its associated gate line 35; a pixel electrode 36 electrically connectible to its associated source line 34 via the switching element 33; and a counter electrode 38 arranged to face the pixel electrode 36. Each unit structure of the retroreflective layer 10 has a recess defined by three planes opposed perpendicularly to each other.

Abstract: It is an object of the present invention to provide an organic electroluminescent display device and a production method thereof with which an organic electroluminescent display device having a high extraction efficiency is produced in a high yield. The present invention is an organic electroluminescent display device, comprising: a component placement substrate having an organic electroluminescence element; a circuit board having a driver circuit for the organic electroluminescence element, the component placement substrate and the circuit board being joined to each other; and a conductor in a clearance between the component placement substrate and the circuit board, the component placement substrate comprising in this order from an observation face side: a transparent separation layer; a light-scattering layer; a transparent electrode; a light-emitting layer; and the reflective electrode, wherein the conductor electrically connects the reflective electrode to an electrode of the driver circuit.

Abstract: A liquid crystal display device 100 includes: a liquid crystal layer 1; a front substrate 3 and a rear substrate 2 between which the liquid crystal layer 1 is held; a pair of electrodes 4, 8 between which the liquid crystal layer 1 is interposed and which are configured to apply a voltage across the liquid crystal layer 1; circular polarizers 15, 16 respectively provided on a front side of the front substrate 3 and a rear side of the rear substrate 2; and first and second alignment films 13, 12 respectively provided between the liquid crystal layer 1 and the front substrate 3 and between the liquid crystal layer 1 and the rear substrate 2. The liquid crystal layer 1 includes, in each of the pixels, a continuous wall 10, a plurality of small sections 14 separated by the wall 10, and a plurality of liquid crystal regions 11, each of which is formed in any one of the plurality of small sections 14.

Abstract: It is an object of the present invention to provide a method for manufacturing tantalum carbide which can form tantalum carbide having a prescribed shape using a simple method, can form the tantalum carbide having a uniform thickness even when the tantalum carbide is coated on the surface of an article and is not peeled off by a thermal history, tantalum carbide obtained by the manufacturing method, wiring of tantalum carbide, and electrodes of tantalum carbide. The tantalum carbide is formed on the surface of tantalum or a tantalum alloy by placing the tantalum or tantalum alloy in a vacuum heat treatment furnace, heat-treating the tantalum or tantalum alloy under a condition where a native oxide layer of Ta2O5 formed on the surface of tantalum or tantalum alloy is sublimated to remove the Ta2O5, introducing a carbon source into the vacuum heat treatment furnace, and then heat-treating.

Abstract: A screen according to the present invention includes: a retroreflective layer, which has a front side and a rear side with an array of corner cubes; a low-refractive-index layer, which is made of a substance with a lower refractive index than the retroreflective layer; and a light absorbing layer for absorbing at least a part of the light that has been incident on the retroreflective layer on the front side thereof and then directed toward the low-refractive-index layer through the rear side thereof. In one embodiment, at least a portion of the light absorbing layer faces the array of corner cubes of the retroreflective layer with the low-refractive-index layer interposed between itself and the retroreflective layer.

Abstract: A liquid crystal display device (100) according to the present invention includes: a scattering liquid crystal panel (110) including a scattering-type liquid crystal layer (140) which is capable of taking a transparent state; and a scattering state and a retroreflection plate (150). The scattering liquid crystal panel (110) before being combined with the retroreflection plate (150) satisfies the relationship of 0.45?log(I0-10/I20-30)?1.48, where, regarding light which enters through a rear face (110b) of the scattering liquid crystal panel (110) and goes out through a front face (110a), I0-10 represents a mean value of scattering intensity of light which goes out at an angle in a range from 0 degrees to 10 degrees with respect to a normal direction of the front face (110a), and I20-30 represents a mean value of scattering intensity of light which goes out in a range from 20 degrees to 30 degrees.

Abstract: Single crystal SiC, having no fine grain boundaries, a micropipe defect density of 1/cm2 or less and a crystal terrace of 10 micrometer or more is obtained by a high-temperature liquid phase growth method using a very thin Si melt layer. The method does not require temperature difference control between the growing crystal surface and a raw material supply polycrystal and preparation of a doped single crystal SiC is possible.

Abstract: The invention is a high-temperature liquid phase growth method using a very thin Si melt layer and characterized in that there is no need of strict temperature difference control between the growing crystal surface and a raw material supply polycrystal, and control of impurity addition is possible. The grown single crystal SiC is characterized in that no fine grain boundaries exist therein, the density of micropipe defects in the growth surface is 1/cm2 or less, and the crystal has a terrace of 10 micrometer or more and a multi-molecular layer step as the minimum unit of a three-molecular layer.

Abstract: Single crystal SiC, having no fine grain boundaries, a micropipe defect density of 1/cm2 or less and a crystal terrace of 10 micrometer or more is obtained by a high-temperature liquid phase growth method using a very thin Si melt layer. The method does not require temperature difference control between the growing crystal surface and a raw material supply polycrystal and preparation of a doped single crystal SiC is possible.

Abstract: It is an object of the present invention to provide a method for manufacturing tantalum carbide which can form tantalum carbide having a prescribed shape using a simple method, can form the tantalum carbide having a uniform thickness even when the tantalum carbide is coated on the surface of an article and is not peeled off by a thermal history, tantalum carbide obtained by the manufacturing method, wiring of tantalum carbide, and electrodes of tantalum carbide. The tantalum carbide is formed on the surface of tantalum or a tantalum alloy by placing the tantalum or tantalum alloy in a vacuum heat treatment furnace, heat-treating the tantalum or tantalum alloy under a condition where a native oxide layer of Ta2O5 formed on the surface of tantalum or tantalum alloy is sublimated to remove the Ta205, introducing a carbon source into the vacuum heat treatment furnace, and then heat-treating.

Abstract: The present invention is a method suitable for heat treatment, or a heat treatment method for growing single crystal silicon carbide by a liquid phase epitaxial method, wherein a monocrystal silicon carbide substrate as a seed crystal and a polycrystal silicon carbide substrate are piled up, placed inside a closed container, and subjected to high-temperature heat treatment, by which very thin metallic silicon melt layer is interposed between the monocrystal silicon carbide substrate and the polycrystal silicon carbide substrate during heat treatment, and single crystal silicon carbide is liquid-phase epitaxially grown on the monocrystal silicon carbide substrate. The closed container is in advance heated to a temperature exceeding approximately 800° C.

Abstract: The invention is a high-temperature liquid phase growth method using a very thin Si melt layer and characterized in that there is no need of strict temperature difference control between the growing crystal surface and a raw material supply polycrystal, and control of impurity addition is possible. The grown single crystal SiC is characterized in that no fine grain boundaries exist therein, the density of micropipe defects in the growth surface is 1/cm2 or less, and the crystal has a terrace of 10 micrometer or more and a multi-molecular layer step as the minimum unit of a three-molecular layer.