Abstract: A three-dimensional memory device includes alternating stacks of insulating layers and electrically conductive layers located over a substrate. Each alternating stack within the plurality of alternating stacks is laterally spaced apart from one another by a network of interconnected trenches that extend through each level of the insulating layers and the electrically conductive layers. Groups of memory stack structures extend through a respective one of the alternating stacks. The network of interconnected trenches includes first lengthwise trenches laterally extending along a first horizontal direction by a first lateral trench extension distance, second lengthwise trenches laterally extending along the first horizontal direction and interlaced with the first lengthwise trenches to provide a laterally alternating sequence, and widthwise trenches connecting an end of a respective one of the second lengthwise trenches to a portion of a sidewall of a first lengthwise trench.

Abstract: A three-dimensional memory device includes alternating stacks of insulating layers and electrically conductive layers located over a substrate. Each alternating stack within the plurality of alternating stacks is laterally spaced apart from one another by a network of interconnected trenches that extend through each level of the insulating layers and the electrically conductive layers. Groups of memory stack structures extend through a respective one of the alternating stacks. The network of interconnected trenches includes first lengthwise trenches laterally extending along a first horizontal direction by a first lateral trench extension distance, second lengthwise trenches laterally extending along the first horizontal direction and interlaced with the first lengthwise trenches to provide a laterally alternating sequence, and widthwise trenches connecting an end of a respective one of the second lengthwise trenches to a portion of a sidewall of a first lengthwise trench.

Abstract: A monolithic three-dimensional memory device includes a plurality of memory stack structures arranged in a hexagonal lattice and located over a substrate. The hexagonal lattice structure is defined by hexagons each having a pair of sides that are parallel to a first horizontal direction and perpendicular to a second horizontal direction, the memory stack structures are located at vertices of the hexagonal lattice, and each memory stack structure includes vertically spaced memory elements and a vertical semiconductor channel. Source contact via structures are located at each center of a subset of the hexagons that forms a one-dimensional array that extends along the second horizontal direction, each source contact via structure being electrically shorted to a respective source region over, or within, the substrate.

Abstract: A monolithic three-dimensional memory device includes a plurality of memory stack structures arranged in a hexagonal lattice and located over a substrate. The hexagonal lattice structure is defined by hexagons each having a pair of sides that are parallel to a first horizontal direction and perpendicular to a second horizontal direction, the memory stack structures are located at vertices of the hexagonal lattice, and each memory stack structure includes vertically spaced memory elements and a vertical semiconductor channel. Source contact via structures are located at each center of a subset of the hexagons that forms a one-dimensional array that extends along the second horizontal direction, each source contact via structure being electrically shorted to a respective source region over, or within, the substrate.