Abstract: A semiconductor device includes a semiconductor portion of a first conductivity type, a first semiconductor layer and a second semiconductor layer of a second conductivity type separated from each other and provided in an upper layer portion of the semiconductor portion, a gate electrode provided on the semiconductor portion, a first contact piercing the gate electrode, a second contact piercing the gate electrode, a first insulating film provided between the first semiconductor layer and a side surface of the first contact and between the first contact and the gate electrode, and a second insulating film provided between the second semiconductor layer and a side surface of the second contact and between the second contact and the gate electrode. A lower portion of the first contact is disposed inside the first semiconductor layer, a lower end of the first contact is connected to the first semiconductor layer.

Abstract: A semiconductor device includes a semiconductor portion of a first conductivity type, a first semiconductor layer and a second semiconductor layer of a second conductivity type separated from each other and provided in an upper layer portion of the semiconductor portion, a gate electrode provided on the semiconductor portion, a first contact piercing the gate electrode, a second contact piercing the gate electrode, a first insulating film provided between the first semiconductor layer and a side surface of the first contact and between the first contact and the gate electrode, and a second insulating film provided between the second semiconductor layer and a side surface of the second contact and between the second contact and the gate electrode. A lower portion of the first contact is disposed inside the first semiconductor layer, a lower end of the first contact is connected to the first semiconductor layer.

Abstract: A semiconductor device includes first and second semiconductor layers, first and second semiconductor regions, a source region, a drain region, and a gate electrode. The second semiconductor layer of a first conductive type is formed over the first semiconductor layer. The first semiconductor region of a second conductive type is formed on a surface of the second semiconductor layer. The source region of the first type is formed on a surface of the first semiconductor region. The drain region of the first type is formed on a surface of the first semiconductor layer having the first type, is separated from the source region. The second semiconductor region of the second type is provided between the drain region and the first semiconductor layer. The gate electrode is formed over the second semiconductor layer and is provided between the drain region and the source region.

Abstract: According to one embodiment, a semiconductor device includes a p-type semiconductor layer, an n-type source region, an insulator, an n-type semiconductor region, an n-type drain region, a p-type channel region, a gate insulating film, a gate electrode, a source electrode, a drain electrode, and an electrode. The source region is provided on a surface of the p-type semiconductor layer. The insulator is provided in a trench formed extending in a thickness direction of the p-type semiconductor layer from the surface of the p-type semiconductor layer. The n-type semiconductor region is provided on the surface of the p-type semiconductor layer between the source region and the insulator. The drain region is provided on the surface of the p-type semiconductor layer between the source region and the n-type semiconductor region and separated from the source region and the n-type semiconductor region.