Patents by Inventor Yasushi Furukawa
Yasushi Furukawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11923262Abstract: An electrical apparatus includes a semiconductor element, conductors and a covering resin. The conductors are connected to the semiconductor element. At least one of the conductors extends in a first direction. The covering resin covers the semiconductor element and a portion of each of the conductors. The conductors respectively include covering portions and exposing portions. Each of the covering portions is covered by the covering resin. Each of the exposing portions is exposed from the covering resin. The conductors are aligned in a second direction. Two of the exposing portions closest to each other are spaced apart in each of the second direction and a third direction. The third direction is perpendicular to the first direction and the second direction. A shortest separation distance between two closest covering portions is shorter than a shortest separation distance between two closest exposing portions.Type: GrantFiled: October 29, 2021Date of Patent: March 5, 2024Assignee: DENSO CORPORATIONInventor: Yasushi Furukawa
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Publication number: 20230298957Abstract: An electric apparatus includes: a first stacked body in which a first semiconductor chip having a first switch is stacked on a first mounting portion; a second stacked body in which a second semiconductor chip having a second switch is stacked on a second mounting portion; a temperature sensor provided in the first stacked body to detect a temperature of the first switch; and a current sensor provided in the second stacked body to detect a current flowing through the second switch. The second stacked body has a heat dissipation property higher than that of the first stacked body.Type: ApplicationFiled: May 24, 2023Publication date: September 21, 2023Inventor: Yasushi FURUKAWA
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Publication number: 20230016437Abstract: In a semiconductor device, a first wiring member is electrically connected to a first main electrode on a first surface of a semiconductor element, and a second wiring member is electrically connected to a second main electrode on a second surface of the semiconductor element. An encapsulating body encapsulates at least a part of each of the first and second wiring members, the semiconductor element and a bonding wire. The semiconductor element has a protective film on the first surface of the semiconductor substrate, and the pad has an exposed surface exposed from an opening of the protective film. The exposed surface includes a connection area to which the bonding wire is connected, and a peripheral area on a periphery of the connection area. The peripheral area has a surface that defines an angle of 90 degrees or less relative to a surface of the connection area.Type: ApplicationFiled: July 11, 2022Publication date: January 19, 2023Inventors: Yasushi FURUKAWA, Hirohito FUJITA, Tetsuto YAMAGISHI, Atsuya AKIBA
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Publication number: 20220148935Abstract: An electrical apparatus includes a semiconductor element, conductors and a covering resin. The conductors are connected to the semiconductor element. At least one of the conductors extends in a first direction. The covering resin covers the semiconductor element and a portion of each of the conductors. The conductors respectively include covering portions and exposing portions. Each of the covering portions is covered by the covering resin. Each of the exposing portions is exposed from the covering resin. The conductors are aligned in a second direction. Two of the exposing portions closest to each other are spaced apart in each of the second direction and a third direction. The third direction is perpendicular to the first direction and the second direction. A shortest separation distance between two closest covering portions is shorter than a shortest separation distance between two closest exposing portions.Type: ApplicationFiled: October 29, 2021Publication date: May 12, 2022Inventor: YASUSHI FURUKAWA
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Publication number: 20130298448Abstract: An additive for water-added bio fuel of the present invention includes: sodium hypochlorite; sodium hydroxide; hydrochloric acid; magnesium chloride; and calcium hydroxide, and makes the water soluble in the fuel oil. Further, a method of producing an additive for water-added bio fuel of the present invention includes: a step of agitating and mixing by putting sodium hydroxide into a solution of sodium hypochlorite; a step of agitating and mixing by putting magnesium chloride and calcium hydroxide into a solution of sodium hypochlorite; and a step of agitating and mixing the two types of solutions.Type: ApplicationFiled: November 14, 2011Publication date: November 14, 2013Applicant: KYORITSU PLASTIC SEISAKUSHOInventor: Yasushi Furukawa
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Publication number: 20130291429Abstract: An additive for water-added bio fuel of the present invention includes: a surface active agent; glycol alcohol; alcohol synthesizable from biomass; and ammonia. A water-added bio fuel of the present invention is obtained such that water and the additive for water-added bio fuel according to the present invention are combined with a fuel oil in a predetermined ratio and that a particle of the water is made fine relative to the fuel oil so as to be dispersed and soluble in the fuel oil.Type: ApplicationFiled: October 12, 2011Publication date: November 7, 2013Applicant: KYORITSU PLASTIC SEISAKUSHOInventor: Yasushi Furukawa
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Patent number: 8518809Abstract: A manufacturing method of an SiC single crystal includes preparing an SiC substrate, implanting ions into a surface portion of the SiC substrate to form an ion implantation layer, activating the ions implanted into the surface portion of the SiC substrate by annealing, chemically etching the surface portion of the SiC substrate to form an etch pit that is caused by a threading screw dislocation included in the SiC substrate and performing an epitaxial growth of SiC to form an SiC growth layer on a surface of the SiC substrate including an inner wall of the etch pit in such a manner that portions of the SiC growth layer grown on the inner wall of the etch pit join with each other.Type: GrantFiled: December 1, 2011Date of Patent: August 27, 2013Assignee: DENSO CORPORATIONInventors: Hiroki Watanabe, Yasuo Kitou, Yasushi Furukawa, Kensaku Yamamoto, Hidefumi Takaya, Masahiro Sugimoto, Yukihiko Watanabe, Narumasa Soejima, Tsuyoshi Ishikawa
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Publication number: 20120142173Abstract: A manufacturing method of an SiC single crystal includes preparing an SiC substrate, implanting ions into a surface portion of the SiC substrate to form an ion implantation layer, activating the ions implanted into the surface portion of the SiC substrate by annealing, chemically etching the surface portion of the SiC substrate to form an etch pit that is caused by a threading screw dislocation included in the SiC substrate and performing an epitaxial growth of SiC to form an SiC growth layer on a surface of the SiC substrate including an inner wall of the etch pit in such a manner that portions of the SiC growth layer grown on the inner wall of the etch pit join with each other.Type: ApplicationFiled: December 1, 2011Publication date: June 7, 2012Applicant: DENSO CORPORATIONInventors: Hiroki WATANABE, Yasuo KITOU, Yasushi FURUKAWA, Kensaku YAMAMOTO, Hidefumi TAKAYA, Masahiro SUGIMOTO, Yukihiko WATANABE, Narumasa SOEJIMA, Tsuyoshi ISHIKAWA
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Publication number: 20080053643Abstract: A surface polyaniline layer comprising a polyaniline and/or a derivative thereof capable of generating active oxygen or hydrogen peroxide upon the reaction with the water component in external air that comes in contact therewith, is formed on at least a portion of the outermost surface of a base body constituting tubes and/or fins, wherein a benzenoid/quinoid ratio in the surface polyaniline layer (defined as a ratio of an absorbancy of the benzenoid structure to an absorbancy of the quinoid structure in the polyaniline and/or the derivative thereof) is in a range of about 0.5 to about 3.0.Type: ApplicationFiled: September 4, 2007Publication date: March 6, 2008Applicant: DENSO CorporationInventors: Tomomi Takagi, Hiroaki Fukude, Yasushi Furukawa, Hitoshi Kuno
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Patent number: 7175914Abstract: In a heat exchanger having tubes and fins, a polyaniline film made of polyaniline and/or a derivative thereof is formed on the surfaces of the tubes and the fins. This polyaniline film is imparted with at least one hydrophilic functional group selected from the class consisting of a primary amino group, a secondary amino group, a tertiary amino group, an ammonium group, a nitric acid group, a carboxyl group, a sulfonic acid group, a phosphonic acid group and a hydroxyl group. Accordingly, the surfaces of the tubes and the fins has good water wettability while maintaining deodorizing and sterilizing functions.Type: GrantFiled: October 29, 2002Date of Patent: February 13, 2007Assignee: Denso CorporationInventors: Tomomi Takagi, Hitoshi Kuno, Hiroaki Fukuda, Yasushi Furukawa, Osamu Kasebe
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Publication number: 20040202839Abstract: In a heat exchanger having tubes and fins, a polyaniline film made of polyaniline and/or a derivative thereof is formed on the surfaces of the tubes and the fins. This polyaniline film is imparted with at least one hydrophilic functional group selected from the class consisting of a primary amino group, a secondary amino group, a tertiary amino group, an ammonium group, a nitric acid group, a carboxyl group, a sulfonic acid group, a phosphonic acid group and a hydroxyl group. Accordingly, the surfaces of the tubes and the fins has good water wettability while maintaining deodorizing and sterilizing functions.Type: ApplicationFiled: October 29, 2002Publication date: October 14, 2004Inventors: Tomomi Takagi, Hitoshi Kuno, Hiroaki Fukuda, Yasushi Furukawa, Osamu Kasebe