Abstract: A low dielectric constant film containing a silicon, a carbon, an oxygen, and a hydrogen is formed on a substrate as a semiconductor wafer, and a resist film is formed on the low dielectric constant film. Then, the low dielectric constant film is etched with the use of the resist film as a mask to form an exposed surface of the low dielectric constant film. Next, there is deposited a protective film that covers the exposed surface of the low dielectric constant film formed by etching. Thereafter, by ashing with the use of a plasma containing an oxygen, the protective film and the resist film are removed. During the ashing, desorption of the carbon from an insulation film is restrained by the protective film.

Abstract: A plasma etching is performed on a substrate having a pattern wherein an interval between neighboring openings formed on a resist mask is equal to or less than 200 nm, wherein the etching is performed by converting a processing gas comprising an active species generating gas which includes a compound having carbon and fluorine, and a nonreactive gas which includes xenon gas into a plasma. The nonreactive gas further includes argon gas.

Abstract: A plasma etching is performed on a substrate having a pattern wherein an interval between neighboring openings formed on a resist mask is equal to or less than 200 nm, wherein the etching is performed by converting a processing gas comprising an active species generating gas which includes a compound having carbon and fluorine, and a nonreactive gas which includes xenon gas into a plasma. The nonreactive gas further includes argon gas.